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Surface-gate-defined single-electron-transistor in a MoS$_{2}$ bilayer
- Publication Year :
- 2016
-
Abstract
- We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS$_{2}$ bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS$_{2}$ bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1608.07894
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1088/1361-6528/aa5ce0