1. Kapitza conductance of Bi/sapphire interface studied by depth- and time-resolved X-ray diffraction
- Author
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Yu-Miin Sheu, Eric C. Landahl, Shambhu Ghimire, David A. Reis, E. R. Peterson, Mariano Trigo, Ctirad Uher, Dohn A. Arms, Yi-Jiunn Chien, Donald A. Walko, and Jie Chen
- Subjects
Diffraction ,Materials science ,Condensed matter physics ,business.industry ,Conductance ,chemistry.chemical_element ,Bragg's law ,General Chemistry ,Condensed Matter Physics ,Bismuth ,Optics ,Thermal conductivity ,chemistry ,Materials Chemistry ,Sapphire ,Interfacial thermal resistance ,Thin film ,business - Abstract
We present Kapitza conductance measurements of the bismuth/sapphire interface using depth- and time-resolved X-ray diffraction, for Bi film thicknesses ranging from 65 to 284 nm. Our measurements provide complementary information about heat transport in the films; we directly observe the thinnest film to be uniformly heated within 1 ns, whereas the thickest film sustains a large near-surface temperature gradient for several ns. The deduced Kapitza conductance is 1950 W/cm2/K. This value is close to the theoretical prediction using the radiation limit.
- Published
- 2011
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