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We experimentally investigate the magnetization angle dependence $M(\alpha)$ for single crystals of MnTe altermagnetic candidate. In high magnetic fields, experimental $M(\alpha)$ curves nearly independent of temperature, they mostly reflect standard antiferromagnetic spin-flop processes below the N\'eel vector reorientation field. In contrast, $M(\alpha)$ dependences are quite unusual at low temperatures and in low magnetic fields: below 81~K, spontaneous magnetization appears as a sharp $M(T)$ magnetization jump, the easy axis direction is equally $\pi/2$ rotated either by increasing the field above 1~kOe or the temperature above 81~K. We provide experimental arguments that the spontaneous magnetization of MnTe below 81~K differs strongly from the well known weak ferromagnetism of conventional antiferromagnetics, thus, it requires to take into account formation of the altermagnetic ground state. Despite the MnTe altermagnetic state is expected to be g-wave, i.e. $\pi/3$ periodic one, our experiment confirms the prevailing population of one from three easy axes, as it has been shown previously by temperature-dependent angle-resolved photo-emission spectroscopy.

We experimentally investigate third-order nonlinear Hall effect for three-dimensional NiTe$_2$ single crystal samples. NiTe$_2$ is the recently discovered type-II Dirac semimetal, so both the inversion and the time-reversal symmetries are conserved in the bulk. As a result, the well known second-order nonlinear Hall effect does not expected for this material, which we confirm as negligibly small second-harmonic transverse Hall voltage response to the longitudinal ac electric current. As the main experimental result, we demonstrate the unsaturated third-harmonic Hall response in NiTe$_2$, which well corresponds to the theoretically predicted third-order nonlinear Hall effect in Dirac semimetals. We also demonstrate, that the third harmonic signal does not depend on the external magnetic field, in contrast to the field-depended first-order and second-order Hall effects., Comment: 5 pages, 3 Postscript figures

We experimentally investigate magnetocaloric effect for the topological magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$ in a wide temperature range. The isothermal magnetic entropy change $\Delta S$ is calculated from the experimental magnetization curves by using Maxwell relation. In addition to the expected $\Delta S$ peak at the Curie temperature $T_C$, we obtain another one at the temperature $T_{inv}$ of the hysteresis inversion, which is the main experimental result. The inverted hysteresis usually originates from the antiferromagnetic coupling between two magnetic phases. For Co$_3$Sn$_2$S$_2$ topological magnetic Weyl semimetal these phases are the ferromagnetic bulk and the spin-polarized topological surface states. Thus, the pronounced magnetocaloric effect at $T_{inv}$ is determined by the bulk magnetization switching by the exchange bias field of the surface spin-polarizad phase, in contrast to the ferromagnetic-paramagnetic transition at the Curie temperature $T_C$. For possible applications of magnetocaloric effect, Weyl semimetals open a new way to shift from ferromagnetic to the antiferromagnetic systems without loss of efficiency, but with higher reversibility and with smaller energy costs.

We experimentally study electron transport across a single planar junction between the indium electrode and MnTe altermagnet candidate. We confirm standard Ohmic behavior with strictly linear current-voltage curves above the indium critical field or temperature, although with high, about 100~kOhm, junction resistance. At low temperatures and in zero magnetic field, we observe a well-developed Andreev curve with the pronounced coherence peaks, which cannot be normally expected for these high values of normal junction resistance. The conclusion on the Andreev reflection is also supported by suppression in magnetic field, as well as by universality of the observed behavior for all of the investigated samples. The experimental results can be explained by specifics of Andreev transport through the disordered region at the superconductor-altermagnet interface. Due to a different set of restrictions on the possibility of Andreev reflection, an altermagnet suffers from the presence of disorder less than a normal spin-degenerate metal, so the conductance enhancement is retained throughout the superconducting gap.

We experimentally investigate Josephson current between two 5~$\mu$m spaced superconducting indium leads, coupled to a NiTe$_2$ single crystal flake, which is a type-II Dirac semimetal. Under microwave irradiation, we demonstrate a.c. Josephson effect at millikelvin temperatures as a number of Shapiro steps. In addition to the integer ($n=1,2,3,4...$) steps, we observe fractional ones at half-integer values $n=1/2,3/2,5/2$ and 7/2, which corresponds to $\pi$ periodicity of current-phase relationship. In contrast to previous investigations, we do not observe $4\pi$ periodicity (disappearance of the odd $n=1,3,5...$ Shapiro steps), while the latter is usually considered as a fingerprint of helical surface states in Dirac semimetals and topological insulators. We argue, that our experiment confirms Josephson current through the topological hinge states in NiTe$_2$: since one can exclude bulk supercurrent in 5~$\mu$m long Josephson junctions, interference of the hinge modes is responsible for the $\pi$ periodicity, while stable odd Shapiro steps reflect chiral character of the topological hinge states., Comment: Some references have been added

We experimentally study magnetization reversal curves for MnTe single crystals, which is the altermagnetic candidate. Above 85~K temperature, we confirm the antiferromagnetic behavior of magnetization $M$, which is known for $\alpha$--MnTe. Below 85~K, we observe anomalous low-field magnetization behavior, which is accompanied by the sophisticated $M(\alpha)$ angle dependence with beating pattern as the interplay between $M(\alpha)$ maxima and minima: in low fields, $M(\alpha)$ shows ferromagnetic-like 180$^\circ$ periodicity, while at high magnetic fields, the periodicity is changed to the 90$^\circ$ one. This angle dependence is the most striking result of our experiment, while it can not be expected for standard magnetic systems. In contrast, in altermagnets, symmetry allows ferromagnetic behavior only due to the spin-orbit coupling. Thus, we claim that our experiment shows the effect of weak spin-orbit coupling in MnTe, with crossover from relativistic to non-relativistic net magnetization, and, therefore, we experimentally confirm altermagnetism in MnTe.

We experimentally investigate magnetization reversal curves for a GeTe topological semimetal. In addition to the known lattice diamagnetic response, we observe narrow magnetization loop in low fields, which should not be expected for non-magnetic GeTe. The hysteresis is unusual, so the saturation level is negative in positive fields, and the loop is passed clockwise, in contrast to standard ferromagnetic behavior. The experimental hysteresis curves can not be obtained from usual ferromagnetic ones by adding/subtracting of any linear dependence, or even by considering several interacting magnetic phases. The possibility of several phases is also eliminated by the remanence plots technique (Henkel or {\delta}M plots). We explain our results as a direct consequence of the correlation between ferroelectricity and spin-polarized surface states in GeTe, similarly to magnetoelectric structures.

We investigate the magnetic response of thin NiI$_2$ flakes for temperatures above 80~K. Since no magnetic ordering is expected for bulk NiI$_2$, we observe clear paramagnetic response for massive NiI$_2$ single crystals. In contrast, thin NiI$_2$ flakes show well-defined ferromagnetic hysteresis loop within $\pm2$~kOe field range. The value of the response does not scale with the sample mass, ferromagnetic hysteresis can be seen for any flake orientation in the external field, so it originates from the sample surface, possibly, due to the anisotropic exchange (Kitaev interaction). The observed ferromagnetism is weakly sensitive to temperature up to 300~K. If a flake is multiply exposed to air, ferromagnetic hysteresis is accompanied by the periodic modulation of the magnetization curves, which is usually a fingerprint of the multiferroic state. While NiI$_2$ flakes can not be considered as multiferroics above 80~K, surface degradation due to the crystallohydrate formation decreases the symmetry of NiI$_2$ surface, which produces the surface ferroelectric polarization in addition to the described above ferromagnetic one.

We experimentally investigate charge transport in In-GeTe and In-GeTe-In proximity devices, which are formed as junctions between superconducting indium leads and thick single crystal flakes of $\alpha$-GeTe topological semimetal. We observe nonmonotonic effects of the applied external magnetic field, including reentrant superconductivity in In-GeTe-In Josephson junctions: supercurrent reappears at some finite magnetic field. For a single In-GeTe Andreev junction, the superconducting gap is partially suppressed in zero magnetic field, while the gap is increased nearly to the bulk value for some finite field before its full suppression. We discuss possible reasons for the results obtained, taking into account spin polarization of Fermi arc surface states in topological semimetal $\alpha$-GeTe with a strong spin-orbit coupling. In particular, the zero-field surface state spin polarization partially suppresses the superconductivity, while it is recovered due to the modified spin-split surface state configuration in finite fields. As an alternative possible scenario, the transition into the Fulde-Ferrell-Larkin-Ovchinnikov state is discussed. However, the role of strong spin-orbit coupling in forming the nonmonotonic behavior has not been analyzed for heterostructures in the Fulde-Ferrell-Larkin-Ovchinnikov state, which is crucial for junctions involving GeTe topological semimetal., Comment: One reference has been added

We experimentally investigate non-linear Hall effect as zero-frequency and second-harmonic transverse voltage responses to ac electric current for topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the Si/SiO$_2$ substrate, where the p-doped Si layer serves as a gate electrode. We confirm, that electron concentration is not gate-sensitive in thick GeTe flakes due to the gate field screening by bulk carriers. In contrast, by transverse voltage measurements, we demonstrate that the non-linear Hall effect shows pronounced dependence on the gate electric field at room temperature. Since the non-linear Hall effect is a direct consequence of a Berry curvature dipole in topological media, our observations indicate that Berry curvature can be controlled by the gate electric field. This experimental observation can be understood as a result of the known dependence of giant Rashba splitting on the external electric field in GeTe. For possible applications, the zero-frequency gate-controlled non-linear Hall effect can be used for the efficient broad-band rectification.

Despite the chiral topological semimetal CoSi is known as bulk diamagnetic, it shows unusual surface ferromagnetism of debatable origin. The ferromagnetic ordering has been attributed to the distorted bonds, the superlattice of ordered vacancies, or even to topological surface textures due to the spin polarization in the neighboring Fermi arcs. We experimentally compare magnetization reversal curves for initially oxidized CoSi single crystals and cleaved samples with a fresh, oxide-free surface. While the oxidized CoSi samples do not show sizable ferromagnetism, the fresh CoSi surface gives a strong ferromagnetic response, which is accompanied by the pronounced modulation of the angle dependence of magnetization, as it can be expected for easy and hard axes in a ferromagnet. In addition to the first order reversal curves analysis, this observation allows us to distinguish between different mechanisms of the ferromagnetic ordering in CoSi single crystals. We conclude that the surface states-induced RKKY interaction between distorted bonds near the sample surface is responsible for the strong ferromagnetic multi-domain behavior for freshly cleaved samples.

We experimentally investigate charge transport through a single planar junction between a NiTe$_2$ Dirac semimetal and a normal gold lead. At millikelvin temperatures we observe non-Ohmic $dV/dI(V)$ behavior resembling Andreev reflection at a superconductor -- normal metal interface, while NiTe$_2$ bulk remains non-superconducting. The conclusion on superconductivity is also supported by suppression of the effect by temperature and magnetic field. In analogy with the known results for Cd$_3$As$_2$ Dirac semimetal, we connect this behavior with interfacial superconductivity due to the flat-band formation at the Au-NiTe$_2$ interface. Since the flat-band and topological surface states are closely connected, the claim on the flat-band-induced superconductivity is also supported by the Josephson current through the topological surface states on the pristine NiTe$_2$ surface. We demonstrate the pronounced Josephson diode effect, which results from the momentum shift of topological surface states of NiTe$_2$ under an in-plane magnetic field.

We experimentally investigate second-harmonic transverse voltage response to ac electrical current for a magnetic nodal-line semimetal Fe$_3$GeTe$_2$. For zero magnetic field, the observed response depends as a square of the longitudinal current, as it should be expected for non-linear Hall effect. The magnetic field behavior is found to be sophisticated: while the first-harmonic response shows the known anomalous Hall hysteresis in FGT, the second-harmonic Hall voltage is characterized by the pronounced high-field hysteresis and flat ($B$-independent) region with curves touching at low fields. The high-field hysteresis strongly depends on the magnetic field sweep rate, so it reflects some slow relaxation process. For the lowest rates, it is also accomplished by multiple crossing points. Similar shape of the second-harmonic hysteresis is known for skyrmion spin textures in non-linear optics. Since skyrmions have been demonstrated for FGT by direct visualization techniques, we can connect the observed high-field relaxation with deformation of the skyrmion lattice. Thus, the second-harmonic Hall voltage response can be regarded as a tool to detect spin textures in transport experiments.

We study magnetization reversal and first order reversal curves for two different magnetic topological semimetals, Co3Sn2S2 and Fe3GeTe2, in a wide temperature range. For the magnetization reversal, we observe strong temperature dependence of the initial (low-temperature) step-like magnetization switchings, so the inverted hysteresis appears at high temperatures. Usually, the inverted hysteresis is a fingerprint of material with two independent magnetic phases, the inversion reflects the phase interaction. First order reversal curve analysis confirms the two-phase behavior even at the lowest temperatures of the experiment. While the bulk ferromagnetic magnetization shows strong temperature dependence, one of the observed phases demonstrates perfect stability below the Curie temperature. The obtained hysteresis loops are of the bow-tie type, which is usually ascribed to appearance of the skyrmionic phase. The described two-phase behavior is mostly identical for Co3Sn2S2 and Fe3GeTe2 magnetic topological semimetals, only the characteristic temperatures differ for these materials. The specifics of our experiment is the excellent temperature stability of the second phase, while the skyrmions are usually observed near the Curie temperature. On the other hand, temperature stability can be expected for surface-state induced spin textures due to the topological protection of surface states in topological semimetals. This also explains the universal behavior of the second phase for two different topological semimetals Co3Sn2S2 and FGT. Both these materials have strongly different bulk properties, the only similarity is the presence of the topological surface states. Thus, we can ascribe the second, temperature-stable magnetic phase to the surface states in topological semimetals.

We experimentally investigate capacitance response of a thick ferroelectric GeTe single-crystal flake on the Si/SiO2 substrate, where p-doped Si layer serves as a gate electrode. We confirm by resistance measurements, that for three-dimensional flakes, electron concentration is not sensitive to the gate electric field due to the screening by bulk carriers. Unexpectedly, we observe that sample capacitance C is strongly diminishing for both gate field polarities, so C(Vg) is a maximum near the zero gate voltage. Also, we observe well-developed hysteresis with the gate voltage sweep direction for the experimental C(Vg) curves. From our analysis, the capacitance behavior is explained by the known dependence of the Rashba parameter on the electric field for giant Rashba splitting in GeTe. In this case, the hysteresis in capacitance should be ascribed to polarization evolution in GeTe surface layers, which also allows to realize the regime of dynamic negative capacitance. The latter can be directly observed in time-dependent resistive measurements, as non-monotonic evolution of voltage response to the step-like current pulse. Thus, the negative capacitance regime can indeed improve performance and, therefore, the energy efficiency of electronic devices.

The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe$_2$ is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe$_2$ interface. We study $dI/dV(V)$ curves, which demonstrate sharp symmetric drop to zero $dI/dV$ differential conductance at some threshold bias voltages $\pm V_{th}$, which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe$_2$ heterostructure shows re-entrant transition to the low-conductive $dI/dV=0$ state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe$_2$ flakes, so we interpret it as a result of the SnSe/WTe$_2$ interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe$_2$ interface is enough to drive 90$^\circ$ change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe$_2$ interface.

Three-dimensional van der Waals ferromagnet Fe$_3$GeTe$_2$ (FGT) is regarded as a candidate for the magnetic topological nodal line semimetal. We investigate lateral electron transport between two 3~$\mu$m spaced superconducting In leads beneath a thick three-dimensional FGT exfoliated flake. At low 30~mK temperature, we observe Josephson supercurrent that exhibits unusual critical current $I_c$ suppression by the magnetic field $B$. The overall $I_c(B)$ pattern is asymmetric in respect to the B sign. We demonstrate, that the asymmetry is defined by the magnetic field sweep direction, so the $I_c(B)$ pattern is strictly reversed (as $B$ to $-B$ inversion) for the opposite sweeps. We also observe an interplay between maximum and minimum in $I_c(B)$ in normal magnetic fields, while there are fast aperiodic $I_c(B)$ fluctuations for the in-plane ones. These effects can not be expected for homogeneous superconductor-ferromagnet-superconductor junctions, while they are known for Josephson spin valves. The mostly possible scenario for Josephson spin valve realization in FGT is the misalignment of spin polarizations of the Fermi arc surface states and ferromagnetic FGT bulk, but we also discuss possible influence of spin-dependent transport between magnetic domains.

We experimentally investigate thermoelectric response of a 100~nm thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage $V_{xy}^{2\omega}$, which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current $I_{ac}$. In addition to strongly non-monotonous dependence $V_{xy}^{2\omega}$, we observe that dc field direction controls the sign of the temperature gradient in the SnSe flake. We provide arguments, that electrocaloric effect is the mostly probable reason for the results obtained. Thus, our experiment can be understood as demonstration of the possibility to induce electrocaloric effect by in-plane electric field in conducting ferroelectric crystals and to detect it by thermoelectric response.

CoSi single crystal is a known realization of a chiral topological semimetal with simultaneously broken mirror and inversion symmetries. In addition to the symmetry-induced spin-orbit coupling, surface ferromagnetism is known in nominally diamagnetic CoSi structures, which appears due to the distorted bonds and ordered vacancies near the surface. We experimentally investigate electron transport through a thin CoSi flake at high current density. Surprisingly, we demonstrate $dV/dI(I)$ curves which are qualitatively similar to ones for ferromagnetic multilayers with characteristic $dV/dI$ magnon peaks and unconventional magnetic field evolution of the peaks' positions. We understand these observations as a result of current-induced spin polarization due to the significant spin-orbit coupling in CoSi. Scattering of non-equilibrium spin-polarized carriers within the surface ferromagnetic layer is responsible for the precessing spin-wave excitations, so the observed magnon modes are the joint effect of surface ferromagnetism and spin-orbit coupling in a CoSi chiral topological semimetal. Thus, thin CoSi flakes behave as magnetic conductors with broken inversion symmetry, which is important for different spintronic phenomena.

We experimentally investigate the magnetic field dependence of Andreev transport through a region of proximity-induced superconductivity in CoSi topological chiral semimetal. With increasing parallel to the CoSi surface magnetic field, the sharp subgap peaks, associated with Andreev bound states, move together to nearly-zero bias position, while there is only monotonous peaks suppression for normal to the surface fields. The zero-bias $dV/dI$ resistance value is perfectly stable with changing the in-plane magnetic field. As the effects are qualitatively similar for In and Nb superconducting leads, they reflect the properties of proximized CoSi surface. The Andreev states coalescence and stability of the zero-bias $dV/dI$ value with increasing in-plane magnetic field are interpreted as the joined effect of the strong SOC and the Zeeman interaction, known for proximized semiconductor nanowires. We associate the observed magnetic field anisotropy with the recently predicted in-plane polarized spin texture of the Fermi arcs surface states., Comment: final version

We experimentally investigate transport properties of a hybrid structure, which consists of a thin single crystal SnSe flake on a top of 5~$\mu$m spaced Au leads. The structure initially is in highly-conductive state, while it can be switched to low-conductive one at high currents due to the Joule heating of the sample, which should be identified as $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ diffusionless martensitic phase transition in SnSe. For highly-conductive state, there is significant hysteresis in $dI/dV(V)$ curves at low biases, so the sample conductance depends on the sign of the applied bias change. This hysteretic behavior reflects slow relaxation due to additional polarization current in the ferroelectric SnSe phase, which we confirm by direct measurement of time-dependent relaxation curves. In contrast, we observe no noticeable relaxation or low-bias hysteresis for the quenched $\beta$-$Cmcm$ low-conductive phase. Thus, ferroelectric behavior can be switched on or off in transport through hybrid SnSe structure by controllable $\alpha$-$Pnma$ -- $\beta$-$Cmcm$ phase transition. This result can also be important for nonvolatile memory development, e.g. phase change memory for neuromorphic computations or other applications in artificial intelligence and modern electronics.

We investigate electron transport along the surface of WTe$_2$ three-dimensional single crystals, which are characterized by coexistence of Weyl semimetal conductivity and ferroelectricity at room temperature. We find that non-linear behavior of $dV/dI(I)$ WTe$_2$ differential resistance is accompanied by slow relaxation process, which appears as the $dV/dI(I)$ dependence on the sign of the current change. This observation is confirmed by direct investigation of time-dependent relaxation curves. While strongly non-linear differential resistance should be expected for the zero-gap WTe$_2$, the slow relaxation in transport is very unusual for well-conducting semimetals at room temperature. We establish, that non-monotonous dependence of the amplitude of the effect on driving current $\Delta dV/dI(I)$ well corresponds to the known Sawyer-Tower's ferroelectric hysteresis loop. This conclusion is also confirmed by gate voltage dependencies, so our results can be understood as a direct demonstration of WTe$_2$ ferroelectric polarization in charge transport experiment.

We experimentally investigate longitudinal and transverse second-harmonic voltage response to ac electrical current for a magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. In contrast to the previously observed Berry-curvature induced non-linear Hall effect for non-magnetic Weyl and Dirac semimetals, the second-harmonic transverse voltage demonstrates sophisticated interplay of different effects for Co$_3$Sn$_2$S$_2$. In high magnetic fields, it is of Seebeck-like square-B law, while the low-field behavior is found to be linear and sensitive to the direction of sample magnetization. The latter can be expected both for the non-linear Hall effect and for the surface state contribution to the Seebeck effect in Weyl semimetals. Thus, thermoelectric effects are significant in Co$_3$Sn$_2$S$_2$, unlike non-magnetic Weyl and Dirac materials.

We experimentally investigate charge transport through the interface between a gold electrode and a black phosphorus single crystal. The experimental $dI/dV(V)$ curves are characterized by well developed zero-bias conductance peak and two strongly different branches. We find that two branches of asymmetric $dI/dV(V)$ curves correspond to different band gap limits, which is consistent with the theoretically predicted band gap reconstruction at the surface of black phosphorus under electric field. This conclusion is confirmed by experimental comparison with the symmetric curves for narrow-gap (WTe$_2$) and wide-gap (GaSe) metal-semiconductor structures. In addition, we demonstrate p-type dopants redistribution at high bias voltages of different sign, which opens a way to use the interface structures with black phosphorus in resistive memory applications., Comment: final version

We study conductivity of strongly disordered amorphous antimony films under high bias voltages. We observe non-linear current-voltage characteristic, where the conductivity value at zero bias is one of two distinct values, being determined by the sign of previously applied voltage. Relaxation curves demonstrate high stability of these conductivity values on a large timescale. Investigations of the antimony film structure allows to determine the percolation character of electron transport in strongly disordered films. We connect the memory effect in conductivity with modification of the percolation pattern due to recharging of some film regions at high bias voltages., Comment: final version

Being encouraged by the interplay between topology, superconductivity and magnetism, we experimentally investigate charge transport through the interface between the Nb superconductor and the time-reversal symmetry breaking Weyl semimetal Co$_3$Sn$_2$S$_2$. In addition to the proximity induced superconducting gap, we observe several subgap features, among which the most interesting is the prominent subgap zero-bias anomaly, absolutely stable against external magnetic fields up to the critical field of Nb. As the promising scenario for the zero-bias anomaly to appear in transport characteristics, we consider the proximity induced zero-energy Andreev bound states interfaced with the half-metallic Co$_3$Sn$_2$S$_2$ and influenced by the strong spin-orbit coupling and large Zeeman splitting.

We experimentally compare two types of interface structures with magnetic and non-magnetic Weyl semimetals. They are the junctions between a gold normal layer and magnetic Weyl semimetal Ti$_2$MnAl, and a ferromagnetic nickel layer and non-magnetic Weyl semimetal WTe$_2$, respectively. Due to the ferromagnetic side of the junction, we investigate spin-polarized transport through the Weyl semimetal surface. For both structures, we demonstrate similar current-voltage characteristics, with hysteresis at low currents and sharp peaks in differential resistance at high ones. Despite this behavior resembles the known current-induced magnetization dynamics in ferromagnetic structures, evolution of the resistance peaks with magnetic field is unusual. We connect the observed effects with current-induced spin dynamics in Weyl topological surface states., Comment: final version

We experimentally study lateral electron transport between two 5~$\mu$m spaced superconducting indium leads on a top of magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$. For the disordered magnetic state of Co$_3$Sn$_2$S$_2$ crystal, we only observe the Andreev reflection in the proximity of each of the leads, which is indicative of highly transparent In-Co$_3$Sn$_2$S$_2$ interfaces. If the sample is homogeneously magnetized, it demonstrates well-developed anomalous Hall effect state. In this regime we find the Josephson current that takes place even for 5~$\mu$m long junctions and shows the unusual magnetic field and temperature dependencies. As a possible reason for the results obtained, we discuss the contribution to the proximity-induced spin-triplet Josephson current from the topologically protected Fermi-arc states on the surface of Co$_3$Sn$_2$S$_2$., Comment: final version

We experimentally investigate electron transport in kagome-lattice ferromagnet Co$_3$Sn$_2$S$_2$, which is regarded as a time-reversal symmetry broken Weyl semimetal candidate. We demonstrate $dV/dI(I)$ curves with pronounced asymmetric $dV/dI$ spikes, similar to those attributed to current-induced spin-wave excitations in ferromagnetic multilayers. In contrast to multilayers, we observe several $dV/dI$ spikes' sequences at low, $\approx$10$^4$ A/cm$^2$, current densities for a thick single-crystal Co$_3$Sn$_2$S$_2$ flake in the regime of fully spin-polarized bulk. The spikes at low current densities can be attributed to novel magnon branches in magnetic Weyl semimetals, which are predicted due to the coupling between two magnetic moments mediated by Weyl fermions. Presence of spin-transfer effects at low current densities in Co$_3$Sn$_2$S$_2$ makes the material attractive for applications in spintronics., Comment: final version

We experimentally investigate a non-linear Hall effect for three-dimensional WTe$_2$ and Cd$_3$As$_2$ single crystals, representing Weyl and Dirac semimetals, respectively. We observe finite second-harmonic Hall voltage, which depends quadratically on the longitudinal current in zero magnetic field. Despite this observation well corresponds to the theoretical predictions, only magnetic field dependence allows to distinguish the non-linear Hall effect from a thermoelectric response. We demonstrate that second-harmonic Hall voltage shows odd-type dependence on the direction of the magnetic field, which is a strong argument in favor of current-magnetization effects. In contrast, one order of magnitude higher thermopower signal is independent of the magnetic field direction., Comment: minor text correction

We experimentally investigate charge transport through a single planar junction between Cd$_3$As$_2$ Dirac semimetal and a normal Au lead. For non-superconducting bulk Cd$_3$As$_2$ samples, we observe non-Ohmic $dV/dI(V)$ curves, which strongly resemble standard Andreev reflection with well-defined superconducting gap. Andreev-like behavior is demonstrated for Cd$_3$As$_2$ samples with different surface and contact preparation techniques. We connect this behavior with surface superconductivity due to the flat-band formation in Cd$_3$As$_2$, which has been predicted theoretically. The conclusion on superconductivity is also supported by the gap suppression by magnetic fields or temperature., Comment: final version

We experimentally study electron transport between two superconducting indium leads, coupled to a single WTe$_2$ crystal, which is a three-dimensional Weyl semimetal. We demonstrate Josephson current in long 5~$\mu$m In-WTe$_2$-In junctions, as confirmed by the observation of integer (1,2,3) and fractional (1/3, 1/2, 2/3) Shapiro steps under microwave irradiation. Demonstration of fractional a.c. Josephson effect indicates multivalued character of the current-phase relationship, which we connect with Weyl topological surface states contribution to Josephson current. In contrast to topological insulators and Dirac semimetals, we do not observe $4\pi$ periodicity in a.c. Josephson effect for WTe$_2$ at different frequencies and power, which might reflect chiral character of the Fermi arc surface states in Weyl semimetal., Comment: the text is seriously corrected. arXiv admin note: text overlap with arXiv:1801.09551

We experimentally investigate spin-polarized transport between a ferromagnetic Ni electrode and a surface of Weyl semimetal, realized in a thick WTe$_2$ single crystal. For highly-transparent Ni-WTe$_2$ planar junctions, we observe non-Ohmic $dV/dI(I)$ behavior with an overall increase of differential resistance $dV/dI$ with current bias, which is accomplished by current-induced switchings. This behavior is inconsistent with trivial interface scattering, but it is well known for spin-polarized transport with magnon emission. Thus, we interpret the experimental results in terms of spin wave excitation in spin textures in the WTe$_2$ topological surface states, which is supported by the obtained magnetic field and temperature $dV/dI(I)$ dependencies.

We experimentally investigate charge transport through the interface between a niobium superconductor and a three-dimensional WTe$_2$ Weyl semimetal. In addition to classical Andreev reflection, we observe sharp non-periodic subgap resistance resonances. From an analysis of their positions, magnetic field and temperature dependencies, we can interpret them as an analog of Tomasch oscillations for transport along the topological surface state across the region of proximity-induced superconductivity at the Nb-WTe$_2$ interface. Observation of distinct geometrical resonances implies a specific transmission direction for carriers, which is a hallmark of the Fermi arc surface states., Comment: 5 pages, some misprints has been corrected

We experimentally study electron transport between two superconducting indium leads, coupled to the WTe$_2$ crystal surface. WTe$_2$ is characterized by presence of Fermi arc surface states, as a predicted type-II Weyl semimetal candidate. We demonstrate Josephson current in unprecedentedly long 5~$\mu$m In-WTe$_2$-In junctions, which is confirmed by $I-V$ curves evolution with temperature and magnetic field. The Josephson current is mostly carried by the topological surface states, which we demonstrate in a double-slit SQUID geometry, realized by coupling the opposite WTe$_2$ crystal surfaces.

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm thick InAs quantum wells. For the trivial case of a direct band insulator in 10~nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12~nm and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14~nm InAs well samples, we additionally observe mesoscopic-like resistance fluctuations, which are subjected to threshold suppression in low magnetic fields., Comment: final version

We experimentally investigate Andreev transport through a single junction between an s-wave indium superconductor and a thick film of a three-dimensional $Bi_2Te_3$ topological insulator. We study $Bi_2Te_3$ samples with different bulk and surface characteristics, where the presence of a topological surface state is confirmed by direct ARPES measurements. All the junctions demonstrate Andreev transport within the superconducting gap. For junctions with transparent $In-Bi_2Te_3$ interfaces we find a number of nearly periodic conductance oscillations, which are accompanied by zero-bias conductance anomaly. Both effects disappear above the superconducting transition or for resistive junctions. We propose a consistent interpretation of both effects as originating from proximity-induced superconducting correlations within the $Bi_2Te_3$ topological surface state.

We investigate charge transport through the junction between a niobium superconductor and the edge of a two-dimensional electron-hole bilayer, realized in an InAs/GaSb double quantum well. For the transparent interface with a superconductor, we demonstrate that the junction resistance is determined by the interlayer charge transfer near the interface. From an analysis of experimental $I-V$ curves we conclude that the proximity induced superconductivity efficiently couples electron and hole layers at low currents. The critical current demonstrates periodic dependence on the in-plane magnetic field, while it is monotonous for the field which is normal to the bilayer plane., Comment: 5 pages

We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that different transport regimes can be achieved by variation of the mesa step. We observe anomalous behavior of Andreev reflection within a finite low-bias interval, which is invariant for both transport regimes. We connect this behavior with the transition from retro- (at low biases) to specular (at high ones) Andreev reflection channels in an InAs/GaSb double quantum well with band inversion., Comment: As accepted to JETP Letters, vol. 104, issue 1

We investigate electron transport through the interface between a niobium superconductor and the edge of a two-dimensional semimetal, realized in a 20~nm wide HgTe quantum well. Experimentally, we observe that typical behavior of a single Andreev contact is complicated by both a pronounced zero-bias resistance anomaly and shallow subgap resistance oscillations with $1/n$ periodicity. These results are demonstrated to be independent of the superconducting material and should be regarded as specific to a 2D semimetal in a proximity with a superconductor. We interpret these effects to originate from the Andreev-like correlated process at the edge of a two-dimensional semimetal., Comment: 5 pages

We experimentally investigate spin-polarized electron transport between two ferromagnetic contacts, placed at the edge of a two-dimensional electron system with band inversion. The system is realized in a narrow (8~nm) HgTe quantum well, the ferromagnetic side contacts are formed from a pre-magnetized permalloy film. In zero magnetic field, we find a significant edge current contribution to the transport between two ferromagnetic contacts. We experimentally demonstrate that this transport is sensitive to the mutual orientation of the magnetization directions of two 200~$\mu$m-spaced ferromagnetic leads. This is a direct experimental evidence on the spin-coherent edge transport over the macroscopic distances. Thus, the spin is extremely robust at the edge of a two-dimensional electron system with band inversion, confirming the helical spin-resolved nature of edge currents., Comment: arXiv admin note: text overlap with arXiv:1410.0585

We experimentally investigate electron transport through the interface between a superconductor and the edge of a two-dimensional electron system with band inversion. The interface is realized as a tunnel NbN side contact to a narrow 8~nm HgTe quantum well. It demonstrates a typical Andreev behavior with finite conductance within the superconducting gap. Surprisingly, the conductance is modulated by a number of equally-spaced oscillations. The oscillations are present only within the superconducting gap and at lowest, below 1~K, temperatures. The oscillations disappear completely in magnetic fields, normal to the two-dimensional electron system plane. In contrast, the oscillations' period is only weakly affected by the highest, up to 14~T, in-plane oriented magnetic fields. We interpret this behavior as the interference oscillations in a helical one-dimensional edge channel due to a proximity with a superconductor., Comment: minor corrections - as published

We experimentally investigate spin-polarized electron transport between a permalloy ferromagnet and the edge of a two-dimensional electron system with band inversion, realized in a narrow, 8~nm wide HgTe quantum well. In zero magnetic field, we observe strong asymmetry of the edge potential distribution with respect to the ferromagnetic ground lead. This result indicates, that the helical edge channel, specific for the structures with band inversion even at the conductive bulk, is strongly coupled to the ferromagnetic side contact, possibly due to the effects of proximity magnetization. It allows selective and spin-sensitive contacting of helical edge states., Comment: As appear in JETP

We experimentally investigate electron transport through the interface between a permalloy ferromagnet and the edge of a two-dimensional electron system with strong Rashba-type spin-orbit coupling. We observe strongly non-linear transport around zero bias at millikelvin temperatures. The observed nonlinearity is fully suppressed above some critical values of temperature, magnetic field, and current through the interface. We interpret this behavior as the result of spin accumulation at the interface and its current-induced absorption as a magnetization torque., Comment: 6 pages, minor corrections

We experimentally investigate transport properties of a single planar junction between the niobium superconductor and the edge of a two-dimensional electron system in a narrow $In_{0.75}Ga_{0.25}As$ quantum well with strong Rashba-type spin-orbit coupling. We experimentally demonstrate suppression of Andreev reflection at low biases at ultra low temperatures. From the analysis of temperature and magnetic field behavior, we interpret the observed suppression as a result of a spin-orbit coupling. There is also an experimental sign of the topological superconductivity realization in the present structure., Comment: as published

We experimentally demonstrate the simultaneous reconstruction of the bulk and the edge energy spectra caused by strong spin-orbit interaction, at the two lowest filling factors $\nu=1$ and $\nu=2$ for $In_xGa_{1-x}As$ two-dimensional electron system with $x = 0.75$. The observed reconstruction is of different character at these filling factors: it is characterized by zeroing of the energy gap at the levels crossing point at $\nu=2$, while the reconstruction at $\nu=1$ goes through the coexistence of two $\nu=1$ quantum Hall phases with different spin projections. An analysis indicates a strong influence of many-body interaction on the reconstruction at $\nu=1$., Comment: 6 pages

We use a Mach-Zehnder quantum Hall interferometer of a novel design to investigate the interference effects at fractional filling factors. Our device brings together the advantages of usual Mach-Zehnder and Fabry-Perot quantum Hall interferometers. It realizes the simplest-for-analysis Mach-Zehnder interference scheme, free from Coulomb blockade effects. By contrast to the standard Mach-Zehnder realization, our device does not contain an etched region inside the interference loop. For the first time for Mach-Zehnder interference scheme, the device demonstrates interference oscillations with $\Phi^*=e/e^*\Phi_0=\Phi_0/\nu$ periodicity at fractional filling factor 1/3. This result indicates that we observe clear evidence for fractionally charged quasiparticles from simple Aharonov-Bohm interference., Comment: as accepted to EPL