Search

This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications. [ABSTRACT FROM AUTHOR]

Present work is concerned with the analysis of transient wave phenomena in a piezo-thermoelastic medium with diffusion, fiber reinforcement and two-temperature, when an elastic wave is made incident obliquely at the traction free plane boundary of the considered medium. The formulation is applied under the purview of generalized theory of thermoelasticity with one relaxation time. The problem is solved analytically and it is found that there exists four coupled quasi waves: qP (quasi-P), qMD (quasi mass diffusion), qT (quasi thermal) and qSV (quasi-SV) waves propagating with different speeds in a two-dimensional model of the solid. The amplitude ratios, phase velocities and energy ratios for the reflected waves are derived and the numerical computations have been carried out with the help of MATLAB programming. Effect of presence of diffusion is analyzed theoretically, numerically and graphically. The number of reflected waves reduce to three in the absence of diffusion as qMD wave will disappear in that case which is physically admissible. Influence of piezoelectric effect, two temperature and anisotropy is discussed on different characteristics of reflected waves such as phase velocity and reflection coefficients. It has been verified that there is no dissipation of energy at the boundary surface during reflection. Thus, the energy conservation law holds at the surface. Finally, all the reflection coefficients are represented graphically through 3D plots to estimate and highlight the effects of frequency and angle of incidence. [ABSTRACT FROM AUTHOR]

In this paper, insulated shallow extension cylindrical surrounding gate (ISE-CSG) MOSFET with high-k gate stack has been proposed and extensively investigated. The performance of high-k ISE-CSG MOSFET has been compared with cylindrical surrounding gate MOSFET. ISE-CSG with high-k gate stack has number of desirable features at 30 nm regimes. The results reveal that ISE-CSG MOSFET with gate stack is more immune to short channel effects because of improved carrier transportation capability. It has been observed that high-k ISE-CSG MOSFET shows improved figure of merits as drive current (ION), ION/IOFF ratio, transconductance (gm), cutoff frequency fT, transconductance generation factor, intrinsic gain (Av), transconductance frequency product, gain transconductance frequency product and gain frequency product. ISE-CSG with high-k gives better control over the depletion region and therefore it is a suitable device for high speed, high frequency and analog/RF circuit applications. [ABSTRACT FROM AUTHOR]

In this paper a cylindrical Dual Metal (DM) Dielectric Engineered (DE) Gate All Around (GAA) MOSFET has been proposed to resolve a big issue of Gate Inducted Drain leakage (GIDL) current in cylindrical Gate All Around (GAA) MOSFET to enhance the device reliability. Dual Metal Dielectric Engineered Gate All Around (DMDEGAA) MOSFET has been compared with both cylindrical Dual Metal Gate All Around (DMGAA) MOSFET and cylindrical Gate All Around (GAA) MOSFET. DMDEGAA MOSFET has larger tunneling distance than other two devices which further reduces Band To Band Tunneling (BTBT). It reduces GIDL current over other devices directing immunity from the leakages along with higher Ion/Ioff ratio showing larger applicability for digital applications. DMDEGAA MOSFET shows Subthreshold Slope (SS) close to 60 mV/decade and has higher transconductance (gm), higher Transconductance Generation Factor (TGF), higher early voltage (VEA), lower channel resistance (Rch), higher Current Gain (CG) and higher Maximum Transducer Power Gain (MTPG) for improved analog performance. DMDEGAA MOSFET also poses higher Cut Off Frequency (fT), higher Frequency Transconductance Product (FTP) and lower Total Gate Capacitance (Cgg) showing its efficacy for high speed and high frequency applications. [ABSTRACT FROM AUTHOR]

In this paper Hafnium Oxide (HfO2) based cylindrical Junctionless Double Surrounding Gate (CJLDSG) MOSFET has been analyzed for various metrics of device performance. HfO2 based CJLDSG MOSFET has been compared with HfO2 based Cylindrical Junctionless Surrounding Gate (CJLSG) MOSFET and Silicon Oxide (SiO2) based CJLDSG MOSFET and CJLSG MOSFET. It has been observed that HfO2 based CJLDSG MOSFET shows improved analog performance in terms of higher drain current, higher transconductance, higher output conductance (gd), higher Transconductance Generation Factor (TGF), higher Early Voltage (VEA), Maximum Transducer Power Gain (MTPG), Current Gain and Subthreshold Slope (SS) close to 60 mV/decade. HfO2 based CJLDSG MOSFET shows lower channel resistance. The Cut Off Frequency (fT) and Frequency Transconductance Product (FTP) of HfO2 based CJLDSG MOSFET is maximum among all and it also offers highest frequency of operation. It also shows higher Ion/Ioff ratio. Thus, making HfO2 based CJLDSG MOSFET an ultimate device for high speed, high frequency digital and analog applications. [ABSTRACT FROM AUTHOR]

In this paper, an analytical model of dual-metal hetero-dielectric (DM-HD) cylindrical gate all around (GAA) MOSFET has been proposed to address and solve a substantial issue of gate-induced drain leakage (GIDL) current in order to improve the device reliability, band-to-band tunneling (BTBT), and OFF state leakages. The structure is based upon asymmetric gate oxide structure by combining silicon dioxide (SiO2) gate dielectric at source side and vacuum dielectric at drain side, which significantly reduces BTBT and OFF-state gate leakages, thereby making it suitable for low-power applications. It is examined that GIDL i.e., an OFF-state leakage phenomenon, is reduced in DM-HD GAA MOSFET by lowering the BTBT. This can be done by reducing OFF-state leakages due to: 1) increase in tunneling width and 2) increased barrier height from source to channel. The results show that the OFF-state leakage current in DM-HD GAA MOSFET reduces to an order of 10^-\textsf 13 over 10^-\textsf 9 A as in the case of conventional GAA MOSFET. The results so obtained are compared with those of cylindrical dual-metal GAA (DM-GAA) MOSFET and GAA MOSFET to analyze its performance. OFF-state leakages at higher temperatures have also been analyzed. [ABSTRACT FROM AUTHOR]

THE LINEAR THEORY of generalized thermoelastic diffusion with one relaxation time is employed to study the interactions in a homogeneous, isotropic elastic solid, when a distributed instantaneous source is acting on the free surface of the body. The eigenvalue approach is adopted for the solution of a two-dimensional problem. The Laplace-Fourier transform technique is used. The expansions of the stresses, displacement components, temperature, concentration and chemical potential are obtained analytically. Numerical results are given and illustrated graphically, employing numerical methods for the inversion for transforms. Comparisons are made with the results predicted by the theory of generalized thermoelasticity and elasticity. [ABSTRACT FROM AUTHOR]

After the harvest of crop, the disposal of the rice stubbles remains a notable area of interest in all the growing areas of rice. The present review paper explores and highlights an effective strategy of decomposing the decomposers of the paddy stubble. Due to the increasing production of rice, there is an increase in rice crop residues and stubbles production. Conventional methods of management of paddy involve burning, surface retention, mulching, bailing, incorporation/amalgamation and direct removal. However, there are certain environmental challenges by using available agricultural implements. Thus, this current study demonstrates strategic management of the paddy crop residue for a sustainable environment. The developed eco-friendly methods will render new dimensions for the application of the post harvested residues. The review paper will be significant for sustainable management of the wastes of the paddy crop and hence strategic decomposition method, which will be beneficial for the society, farmers as well as the environment