111 results on '"Deranlot, Cyrile"'
Search Results
2. Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature
- Author
-
Moreau-Luchaire, Constance, Moutafis, Christoforos, Reyren, Nicolas, Sampaio, José J., Bouzehouane, Karim, Deranlot, Cyrile, Warnicke, P., Vaz, C. A. F., Van Horne, N., Garcia, Karin, Wohlhüter, P., George, Jean-Marie, Weigand, M., Raabe, Jörg, Cros, Vincent, and Fert, Albert
- Subjects
Condensed Matter - Materials Science - Abstract
Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.
- Published
- 2016
- Full Text
- View/download PDF
3. Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core
- Author
-
Sushruth, Manu, Fried, Jasper P., Anane, Abdelmadjid, Xavier, Stephane, Deranlot, Cyrile, Kostylev, Mikhail, Cros, Vincent, and Metaxas, Peter J.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Vortex core polarity switching in NiFe disks has been evidenced using an all-electrical rectification scheme. Both simulation and experiments yield a consistent loss of the rectified signal when driving the core at high powers near its gyrotropic resonant frequency. The frequency range over which the loss occurs grows and shifts with increasing signal power, consistent with non-linear core dynamics and periodic switching of the core polarity induced by the core attaining its critical velocity. We demonstrate that core polarity switching can be impeded by displacing the core towards the disk's edge where an increased core stiffness reduces the maximum attainable core velocity., Comment: 6 pages, 5 figures
- Published
- 2016
- Full Text
- View/download PDF
4. Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
- Author
-
Dlubak, Bruno, Martin, Marie-Blandine, Weatherup, Robert S., Yang, Heejun, Deranlot, Cyrile, Blume, Raoul, Schloegl, Robert, Fert, Albert, Anane, Abdelmadjid, Hofmann, Stephan, Seneor, Pierre, and Robertson, John
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.
- Published
- 2014
- Full Text
- View/download PDF
5. Highly efficient spin transport in epitaxial graphene on SiC
- Author
-
Dlubak, Bruno, Martin, Marie-Blandine, Deranlot, Cyrile, Servet, Bernard, Xavier, Stéphane, Mattana, Richard, Sprinkle, Mike, Berger, Claire, De Heer, Walt A., Petroff, Frédéric, Anane, Abdelmadjid, Seneor, Pierre, and Fert, Albert
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.
- Published
- 2013
- Full Text
- View/download PDF
6. A ferroelectric memristor
- Author
-
Chanthbouala, André, Garcia, Vincent, Cherifi, Ryan O., Bouzehouane, Karim, Fusil, Stéphane, Moya, Xavier, Xavier, Stéphane, Yamada, Hiroyuki, Deranlot, Cyrile, Mathur, Neil D., Bibes, Manuel, Barthélémy, Agnès, and Grollier, Julie
- Subjects
Condensed Matter - Materials Science - Abstract
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors have recently emerged based on well-established physical phenomena with albeit modest resistance changes. Here we demonstrate that voltage-controlled domain configurations in ferroelectric tunnel barriers yield memristive behaviour with resistance variations exceeding two orders of magnitude and a 10 ns operation speed. Using models of ferroelectric-domain nucleation and growth we explain the quasi-continuous resistance variations and derive a simple analytical expression for the memristive effect. Our results suggest new opportunities for ferroelectrics as the hardware basis of future neuromorphic computational architectures.
- Published
- 2012
- Full Text
- View/download PDF
7. Unravelling the role of the interface for spin injection into organic semiconductors
- Author
-
Barraud, Clément, Seneor, Pierre, Mattana, Richard, Fusil, Stéphane, Bouzehouane, Karim, Deranlot, Cyrile, Graziosi, Patrizio, Hueso, Luis, Bergenti, Ilaria, Dediu, Valentin, Petroff, Frédéric, and Fert, Albert
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices., Comment: Original version. Revised version to appear in Nature Physics.
- Published
- 2010
- Full Text
- View/download PDF
8. High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes
- Author
-
Pizzini, Stefania, Uhlir, Vojtech, Vogel, Jan, Rougemaille, Nicolas, Laribi, Sana, Cros, Vincent, Jimenez, Erika, Camarero, Julio, Tieg, Carsten, Bonet, Edgar, Bonfim, Marlio, Mattana, Richard, Deranlot, Cyrile, Petroff, Frédric, Ulysse, Christian, Faini, Giancarlo, and Fert, Albert
- Subjects
Condensed Matter - Materials Science - Abstract
Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities., Comment: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003
- Published
- 2008
- Full Text
- View/download PDF
9. Stabilization and tuning of perpendicular magnetic anisotropy in room-temperature ferromagnetic transparent CeO2 films.
- Author
-
Figueiredo-Prestes, Nicholas, Oliveira, Ronei C., Tavares, Mariana A. B., Costa, Daniel S., Mazzaro, Irineu, Jurca, Hugo F., Zarpellon, Juliana, Martins, Maximiliano D., Deranlot, Cyrile, George, Jean-Marie, and Mosca, Dante H.
- Subjects
PERPENDICULAR magnetic anisotropy ,MAGNETIC coupling ,MAGNETIC devices ,TRANSPARENT electronics - Abstract
The development of multifunctional materials that combine optical transparency to room-temperature magnetism is still a great challenge. Here, we present an investigation on the room-temperature ferromagnetism of ceria (CeO 2) nanocrystalline films integrated to cobalt and platinum multilayered films (Co/Pt-ML) with perpendicular magnetic anisotropy (PMA). The magnetic coupling between Co/Pt-ML and CeO 2 films spaced by Pt interlayers with different thicknesses (from 3 nm to 20 nm) enable stabilization and tuning of PMA along with the stacking at remanence. CeO 2 films on the Co/Pt-ML films exhibit domain structures consisting of nonconnected labyrinthine patterns dominated by protruding fingers similar to that of individual Co/Pt-ML films. Our present results demonstrate that the PMA of Co/Pt-ML films can be used to exploit the room-temperature ferromagnetism of transparent CeO 2 films and their multifunctionalities for emerging transparent electronics and spintronics such as high-density magnetic devices. [ABSTRACT FROM AUTHOR]
- Published
- 2019
- Full Text
- View/download PDF
10. Thermal Stability of Ultrathin Co/Pt Multilayers
- Author
-
Figueiredo-Prestes, Nicholas, primary, Zarpellon, Juliana, additional, Costa, Daniel da Silva, additional, Mazzaro, Irineu, additional, de Camargo, Paulo César, additional, de Oliveira, Adílson J. A., additional, Deranlot, Cyrile, additional, George, Jean-Marie, additional, and Mosca, Dante Homero, additional
- Published
- 2021
- Full Text
- View/download PDF
11. Integration of multiferroic BiFe[O.sub.3] thin films into heterostructures for spintronics
- Author
-
Bea, Helene, Bibes, Manuel, Herranz, Gervasi, Zhu, Xiao-Hong, Fusil, Stephane, Bouzehouane, Karim, Jacquet, Eric, Deranlot, Cyrile, and Barthelemy, Agnes
- Subjects
Dielectric films -- Atomic properties ,Thin films -- Atomic properties ,Tunneling (Physics) -- Evaluation ,Ion exchange -- Observations ,Particle spin -- Observations ,Business ,Electronics ,Electronics and electrical industries - Abstract
The revival of multiferroics is motivated by their exciting physics and their ability to bring novel functionalities to a number of technological fields such as spintronics. The lack of room temperature ferroelectric ferromagnets is a problem and has driven most of the attention thus far to BiFe[O.sub.3], a ferroelectric weak-ferromagnet with both transition temperatures superior to 300K. In this paper, we report on the properties of BiFe[O.sub.3] heterostructures and focus on two types of approaches towards BiFe[O.sub.3]-based spintronics devices. One uses BiFe[O.sub.3] as an exchange bias layer in spin-valve structures in which the magnetic configuration is potentially switchable by an electric field, via the magnetoelectric coupling existing in BiFe[O.sub.3]. The other consists in integrating BiFe[O.sub.3] ultrathin films as tunnel barriers in magnetic tunnel junctions with the objective of exploiting their ferroelectric character along with their specific symmetry filtering properties. General perspectives for multiferroics in spintronics are given. Index Terms--Exchange bias, multiferroics, spintronics, tunneling.
- Published
- 2008
12. Stabilization and tuning of perpendicular magnetic anisotropy in room-temperature ferromagnetic transparent CeO2 films
- Author
-
Figueiredo-Prestes, Nicholas, primary, Oliveira, Ronei C., additional, Tavares, Mariana A. B., additional, Costa, Daniel S., additional, Mazzaro, Irineu, additional, Jurca, Hugo F., additional, Zarpellon, Juliana, additional, Martins, Maximiliano D., additional, Deranlot, Cyrile, additional, George, Jean-Marie, additional, and Mosca, Dante H., additional
- Published
- 2019
- Full Text
- View/download PDF
13. Spin Hall effect in AuW alloys
- Author
-
Laczkowski, Piotr, Rojas-Sánchez, Juan, Fu, Yu, Savero-Torres, Williams, Reyren, Nicolas, Deranlot, Cyrile, George, Jean-Marie, Jaffrès, Henri, Notin, Lucien, Beigné, Cyrile, Marty, Alain, Warin, Patrick, Attané, Jean-Philippe, Vila, Laurent, Fert, Albert, Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and THALES [France]-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Orbital dynamics ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Condensed Matter::Strongly Correlated Electrons ,Transition metals ,Spintronics ,Computer Science::Cryptography and Security ,Absorption - Abstract
International audience; The spin Hall effect (SHE) [1] allows for a reciprocal conversion between charge and spin currents using the spin orbit coupling which can be at the core of several promising spintronics devices. The spin orbit interaction is used to produce a transverse flow of spin or charge in response to a longitudinal excitation, these are the direct or inverse SHE. The spin Hall angle (SHA), the ratio of longitudinal and transverse electronic conductivities, is the characterizing parameter of this conversion. So far, large SHA have been reported in transition metals like Pt, Pd, W, Beta-Ta and in a few alloys with large spin orbit coupling impurities: CuIr, CuBi or CuPb [2]. In this presentation we will report on our study of the SHA in AuW alloys [3] which exhibits a non-monotonic relation with the W concentration. In the regime of diluted alloys the behaviour suggests a dominant side-jump contribution to the spin Hall resistivity, the SHA increasing with the W concentration. We will present experiments demonstrating the requirement of new spin-absorption model in lateral spin valves adapted to the case of strong spin absorption for a correct evaluation of the SHA. Altogether with complementary Ferromagnetic Resonance Spin-Pumping studies, it then leads to SHA as large as +15%. At higher W content the SHA sign is reversed, becoming negative as for pure W.
- Published
- 2016
14. Chirality-mediated bistability and strong frequency downshifting of the gyrotropic resonance of a magnetic vortex due to dynamic destiffening
- Author
-
Sushruth, Manu, primary, Fried, Jasper P., additional, Anane, Abdelmadjid, additional, Xavier, Stephane, additional, Deranlot, Cyrile, additional, Cros, Vincent, additional, and Metaxas, Peter J., additional
- Published
- 2017
- Full Text
- View/download PDF
15. Topological spin-orbitronics (Conference Presentation)
- Author
-
Reyren, Nicolas, primary, Maccariello, Davide, additional, Rojas-Sánchez, Juan-Carlos, additional, Moreau-Luchaire, Constance, additional, Oyarzún, Simón, additional, Fu, Yu, additional, Marty, Alain, additional, Vergnaud, Céline, additional, Gambarelli, Serge, additional, Vila, Laurent, additional, Jamet, Matthieu, additional, Ohtsubo, Yoshiyuki, additional, Taleb-Ibrahimi, Amina, additional, Le Fèvre, Patrick, additional, Bertran, François, additional, Moutafis, Christoforos, additional, Sampaio, João, additional, Vaz, Carlos A. F., additional, Van Horne, Noah, additional, Bouzehouane, Karim, additional, Garcia, Karin, additional, Deranlot, Cyrile, additional, Warnicke, Peter, additional, Wohlhüter, Phillip, additional, Weigand, Markus, additional, Raabe, Jörg, additional, Cros, Vincent, additional, George, Jean-Marie, additional, and Fert, Albert, additional
- Published
- 2016
- Full Text
- View/download PDF
16. Spin Hall effect in 5d Au: W transition metal alloys (Conference Presentation)
- Author
-
Laczkowski, Piotr, primary, Rojas-Sánchez, Juan-Carlos, additional, Savero-Torres, Williams, additional, Reyren, Nicolas, additional, Deranlot, Cyrile, additional, George, Jean-Marie, additional, Jaffres, Henri, additional, Fu, Yu, additional, Marty, Alain, additional, Warin, Patrick, additional, Attané, Jean-Philippe, additional, Vila, Laurent, additional, and Fert, Albert, additional
- Published
- 2016
- Full Text
- View/download PDF
17. Interdependency of subsurface carbon distribution and graphene-catalyst interaction
- Author
-
Weatherup, Robert S., Amara, Hakim, Blume, Raoul, Dlubak, Bruno, Bayer, Bernhard C., Diarra, Mamadou, Bahri, Mounib, Cabrero-Vilatela, Andrea, Caneva, Sabina, Kidambi, Piran R., Martin, Marie-Blandine, Deranlot, Cyrile, Seneor, Pierre, Schloegl, Robert, Ducastelle, François, Bichara, Christophe, Hofmann, Stephan, Weatherup, Robert [0000-0002-3993-9045], Hofmann, Stephan [0000-0001-6375-1459], and Apollo - University of Cambridge Repository
- Subjects
0306 Physical Chemistry (incl. Structural) - Abstract
The dynamics of the graphene-catalyst interaction during chemical vapor deposition are investigated using in situ, time- and depth-resolved X-ray photoelectron spectroscopy, and complementary grand canonical Monte Carlo simulations coupled to a tight-binding model. We thereby reveal the interdependency of the distribution of carbon close to the catalyst surface and the strength of the graphene-catalyst interaction. The strong interaction of epitaxial graphene with Ni(111) causes a depletion of dissolved carbon close to the catalyst surface, which prevents additional layer formation leading to a self-limiting graphene growth behavior for low exposure pressures (10(-6)-10(-3) mbar). A further hydrocarbon pressure increase (to ∼10(-1) mbar) leads to weakening of the graphene-Ni(111) interaction accompanied by additional graphene layer formation, mediated by an increased concentration of near-surface dissolved carbon. We show that growth of more weakly adhered, rotated graphene on Ni(111) is linked to an initially higher level of near-surface carbon compared to the case of epitaxial graphene growth. The key implications of these results for graphene growth control and their relevance to carbon nanotube growth are highlighted in the context of existing literature.
- Published
- 2014
18. Perpendicular Magnetic Anisotropy and Intralayer Interactions in a Single Layer of CoPt Nanoparticles
- Author
-
Rubín, Javier, primary, Figueroa, Adriana I., additional, Stankiewicz, Jolanta, additional, Bartolomé, Fernando, additional, García, Luis Miguel, additional, Cezar, Julio C., additional, Petroff, Frédéric, additional, Deranlot, Cyrile, additional, and Bartolomé, Juan, additional
- Published
- 2016
- Full Text
- View/download PDF
19. Publisher's Note: Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core [Phys. Rev. B 94, 100402(R) (2016)]
- Author
-
Sushruth, Manu, primary, Fried, Jasper P., additional, Anane, Abdelmadjid, additional, Xavier, Stephane, additional, Deranlot, Cyrile, additional, Kostylev, Mikhail, additional, Cros, Vincent, additional, and Metaxas, Peter J., additional
- Published
- 2016
- Full Text
- View/download PDF
20. Electrical measurement of magnetic-field-impeded polarity switching of a ferromagnetic vortex core
- Author
-
Sushruth, Manu, primary, Fried, Jasper P., additional, Anane, Abdelmadjid, additional, Xavier, Stephane, additional, Deranlot, Cyrile, additional, Kostylev, Mikhail, additional, Cros, Vincent, additional, and Metaxas, Peter J., additional
- Published
- 2016
- Full Text
- View/download PDF
21. Self-assembled monolayers based spintronics: from ferromagnetic surface functionalization to spin-dependent transport
- Author
-
Tatay, Sergio, primary, Galbiati, Marta, additional, Delprat, Sophie, additional, Barraud, Clément, additional, Bouzehouane, Karim, additional, Collin, Sophie, additional, Deranlot, Cyrile, additional, Jacquet, Eric, additional, Seneor, Pierre, additional, Mattana, Richard, additional, and Petroff, Frédéric, additional
- Published
- 2016
- Full Text
- View/download PDF
22. Millionfold Resistance Change in Ferroelectric Tunnel Junctions Based on Nickelate Electrodes
- Author
-
Bruno, Flavio Y., primary, Boyn, Sören, additional, Fusil, Stéphane, additional, Girod, Stéphanie, additional, Carrétéro, Cécile, additional, Marinova, Maya, additional, Gloter, Alexandre, additional, Xavier, Stéphane, additional, Deranlot, Cyrile, additional, Bibes, Manuel, additional, Barthélémy, Agnès, additional, and Garcia, Vincent, additional
- Published
- 2016
- Full Text
- View/download PDF
23. Stabilization of perpendicular magnetic anisotropy in CeO2 films deposited on Co/Pt multilayers
- Author
-
Figueiredo-Prestes, Nicholas, primary, Zarpellon, Juliana, additional, Jurca, Hugo F., additional, Fernandes, Vilmar, additional, Varalda, José, additional, Schreiner, Wido H., additional, Mosca, Dante H., additional, Fichtner, Paulo F. P., additional, Fabrim, Zacarias E., additional, Bouzehouane, Karim, additional, Deranlot, Cyrile, additional, and George, Jean-Marie, additional
- Published
- 2016
- Full Text
- View/download PDF
24. Nanostructuration of Cr/Si Layers Induced by Ion Beam Mixing
- Author
-
Lunéville, Laurence, Largeau, Ludovic, Deranlot, Cyrile, Moncoffre, Nathalie, Serruys, Yves, Baldinozzi, Gianguido, Simeone, David, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, THALES [France]-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Baldinozzi, Gianguido
- Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] - Abstract
Atomic collisions in solids induced by ion beam are often associated with the concept of disorder. In fact, the mobility induced in solids by ion irradiation at appropriate temperatures leads to the production of a wealth of phases which may (or not) be related to the equilibrium phase diagram. Despite, many attempts are made to understand the phase stability and the enhanced mobility of defect under irradiation even at the atomic scale, no clear picture of ion beam mixing exists. The major problem associated with ion beam mixing comes from the fact that it remains quite difficult to accurately measure a concentration over few nanometers. The X Ray Reflectometry (XRR), extensively used in micro electronics, appears to be a useful technique to overcome this difficulty. In this work, we apply the XRR technique to study the nanostructuration of Cr/Si layers induced by 80 keV Kr ion beam at room temperature, a textbook example of ion beam mixing. The analysis of XRR profiles allows computing accurate profiles of Si and Cr concentrations with a resolution equals to 1 nanometer. From these experimental profiles, we point out that the ion beam mixing appears to be a complex process which can not be only described as a diffusion controlled process.
- Published
- 2012
25. Ekstrinsični spinski Hallov efektu u CuIr legurama
- Author
-
Basletić, Mario, Hamzić, Amir, Fert, Albert, Deranlot, Cyrile, Niimi, Y., Morota, M., Wei, D. H., Otani, Y., Gajović, Andreja, Tokić, Vedrana, Zorić, Maja, and Maruščak, Tomislav
- Subjects
spinski hallov efekt ,asimetrično raspršenje ,spin-orbit interakcija - Abstract
Spinski Hallov efekt (SHE) je pojava kod koje dolazi do akumuliranja/razdvajanja spinova u vodiču, uslijed asimetrije u udarnom presjeku raspršenja nosioca naboja različitog spina. Osim ovog direktnog SHE-a značajan je i tzv. inverzni SHE (ISHE) u kojem spinska struja -- struja u kojoj postoji tok spina ali ne i naboja -- uslijed spinski ovisnog raspršenja generira tok naboja odnosno električnu struju. S obzirom da se pomoću (I)SHE može ostvariti transformacija obične električne struje u spinsku struju i obratno, oba efekta su od vrlo velikog interesa za daljnji razvoj spintronike i uređaja koji se zasnivaju na manipulaciji spina elektrona. U našem radu proučavan je inverzni SHE injektiranjem spinske struje iz NiFe elektroda u CuIr elektrodu i njegova ovisnost o koncentraciji primjesa iridija. Pokazano je da se uslijed asimetričnog raspršenja (skew scattering) na nemagnetskim primjesama iridija generira tok naboja (inverzni SHE). Učinak je proporcionalan koncentraciji iridija i praktički temperaturno neovisan za 4.2K < T < 200K. Efikasnost pretvorbe `spinska struja' – `električna struja' (tzv. spinski Hallov kut) veća je nego u dosadašnjim mjerenjima SHE u čistim metalima, i u skladu je s vrijednostima iz literature od prije tridesetak godina. Dobiveni rezultati pokazuju da je raspršenje elektrona na nemagnetskim primjesama jedan od mogućih načina za ostvarivanje velikog iznosa spinskog Hallovog efekta.
- Published
- 2011
26. Electrical control of the perpendicular magnetization in Pt/[Co/Ni]3/Al multilayers (Presentation Recording)
- Author
-
Rojas-Sánchez, Juan-Carlos, additional, Sampaio, Joao, additional, Laczkowski, Piotr, additional, Reyren, Nicolas, additional, Deranlot, Cyrile, additional, Collin, Sophie, additional, Jaffres, Henri, additional, Mougin, Alexandra, additional, Fert, Albert, additional, and George, Jean-Marie, additional
- Published
- 2015
- Full Text
- View/download PDF
27. Unidirectional Spin-Dependent Molecule-Ferromagnet Hybridized States Anisotropy in Cobalt Phthalocyanine Based Magnetic Tunnel Junctions
- Author
-
Barraud, Clément, primary, Bouzehouane, Karim, additional, Deranlot, Cyrile, additional, Fusil, Stéphane, additional, Jabbar, Hashim, additional, Arabski, Jacek, additional, Rakshit, Rajib, additional, Kim, Dong-Jik, additional, Kieber, Christophe, additional, Boukari, Samy, additional, Bowen, Martin, additional, Beaurepaire, Eric, additional, Seneor, Pierre, additional, Mattana, Richard, additional, and Petroff, Frédéric, additional
- Published
- 2015
- Full Text
- View/download PDF
28. Recovering ferromagnetic metal surfaces to fully exploit chemistry in molecular spintronics
- Author
-
Galbiati, Marta, primary, Delprat, Sophie, additional, Mattera, Michele, additional, Mañas-Valero, Samuel, additional, Forment-Aliaga, Alicia, additional, Tatay, Sergio, additional, Deranlot, Cyrile, additional, Seneor, Pierre, additional, Mattana, Richard, additional, and Petroff, Frédéric, additional
- Published
- 2015
- Full Text
- View/download PDF
29. Is spin transport through molecules really occurring in organic spin valves? A combined magnetoresistance and inelastic electron tunnelling spectroscopy study
- Author
-
Galbiati, Marta, primary, Tatay, Sergio, additional, Delprat, Sophie, additional, Khanh, Hung Le, additional, Servet, Bernard, additional, Deranlot, Cyrile, additional, Collin, Sophie, additional, Seneor, Pierre, additional, Mattana, Richard, additional, and Petroff, Frédéric, additional
- Published
- 2015
- Full Text
- View/download PDF
30. Extrinsic Spin Hall Effects in Cu induced by Ir impurity
- Author
-
Niimi, Z., Morota, M., Wei, D., Deranlot, Cyrile, Basletić, Mario, Hamzić, Amir, Fert, Albert, and Otani, Yoshichika
- Subjects
spin Hall effect ,skew scattering ,spintronics - Abstract
The spin Hall effect (SHE) is one of the important phenomena in spintronics since it enables to create spin currents in non-magnetic materials without using a ferromagnet. Recently-reported large SHEs in Pt and Au have triggered the search for a larger SHE in metallic devices. The mechanism of the large SHEs, however, have not been figured out yet ; whether it is intrinsic or extrinsic, if it is extrinsic whether it stems from the skew scattering mechanism or the side jump one. In this work, we focus on the extrinsic SHE. By adding Ir impurity into pure Cu, we have studied the impurity concentration dependence of the SHE in CuIr. We have used the lateral spin valve structure which consists of two Py wires and a CuIr middle wire.This device allows to estimate precisely how much spin currents are injected into CuIr. By flowing electric current from Py to one of the Cu electrodes, pure spin currents are injected into the CuIr middle wire and we are able to measure the inverse SHE. No SHE has been observed when there is no Ir impurity. With increasing the Ir impurity, however, the SH resistivity increases linearly with the resistivity of CuIr. This linear dependence strongly indicates that the SHE in CuIr is due to the skew scattering mechanism. From the slope of the SHE resistivity vs CuIr resistivity curve, it turns out that the SH angle in this system is 1.5%, which is consistent with the previous anomalous Hall effect measurement in CuMnIr.
- Published
- 2010
31. Functional Oxide Nanostructures and Heterostructures for Spintronics
- Author
-
Barthelemy, Agnes, Bibes, Manuel, Garcia, V., Copie, Olivier, Sefrioui, Z., Basletić, Mario, Bouzehouane, Karim, Fusil, Stephan, Jacquet, Eric, Imhoff, D., Bocher, L., Deranlot, Cyrile, Hamzić, Amir, Santamaria, J., and Mathur, N.
- Subjects
Condensed Matter::Materials Science ,spintronics ,manganites ,multiferroics ,STO diluted oxides ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect - Abstract
Due to the large diversity of their physical properties and the potentiality to modulate them, the role of oxides in electronics has continuously increased over the past few years. The field of spintronics is no exception. This functional character is further increased by the possibility to obtain radically new properties at their interfaces. To illustrate our work in this field, we will present the results on all manganite tunnel junctions in which ferromagnetism is induced in the barrier by proximity effect resulting in a related exchange splitting of the conduction band and the ensuing spin filtering phenomena. Also, the experiments on heterostructures combining ferroelectric tunnel barriers of BaTiO3 and ferromagnetic electrodes (Fe or Co) will be discussed. This kind of heterostructures allows to generate, within a single device, not only a tunnel magnetoresistance (TMR) phenomena related to the relative orientation of the magnetization of the electrodes and a tunnel electroresistance (TER) induced by the ferroelectric polarisation of the barrier. They also give rise to an interfacial magnetoelectric coupling that results in an unusual modulation of the spin polarisation at the interface by the ferroelectricity resulting in a TEMR (Tunnel Electro MagnetoResistance) effect in these artificial multiferroic heterostructures. Finally, we will show the recent results on the conduction at the interface between two insulating materials SrTiO3 and LaAlO3 and the experiments we have performed in order to determine the extension of this electron gas.
- Published
- 2010
32. Study of MgO/GaAs(001) contacts for spin injection/detection in n-type unipolar devices
- Author
-
Le Gall, Sylvain, Le Breton, Jean-Christophe, Jézéquel, Guy, Lépine, Bruno, Schieffer, Philippe, Turban, Pascal, J., Zarpellon, Tran, Michael, Deranlot, Cyrile, Jaffrès, Henri, George, Jean-Marie, Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), THALES [France]-Centre National de la Recherche Scientifique (CNRS), Materials Research Society, ANR-05-NANO-0072,MOMES,Manipulation Optique, Magnétisme, Electronique de Spin(2005), LE GALL, Sylvain, Programme National en Nanosciences et Nanotechnologies - Manipulation Optique, Magnétisme, Electronique de Spin - - MOMES2005 - ANR-05-NANO-0072 - PNANO - VALID, Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-THALES, and THALES-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2009
33. Large spin Hall effect induced by resonant scattering on spin-orbit split impurity states
- Author
-
Fert, Albert, Basletić, Mario, Deranlot, Cyrile, Friederich, Alain, Hamzić, Amir, Kimura, Takashi, Morota, M., Otani, Yoshichika, and Vila, Laurent
- Subjects
spin Hall efect ,spin-orbit interaction ,resonant scattering ,spintronics - Abstract
We present experimental results which show that doping Cu with (nonmagnetic) 6d impurities can induce a very large Spin Hall Effect. The Spin Hall conductivity can exceed 10^7 Ohm^(-1)m^(-1), to be compared to 10^4-10^6 Ohm^(-1)m^(-1) in Pt or Au (Kimura et al, PRL 2007 ; Seki et al, Nature Materials ; 2008), 10^3 Ohm^(-1)m^(-1) in Al (Valenzuela and Tinkham, Nature 2006) or 1 Ohm^(-1)m^(-1) in InGaAs (Kato et al, Science 2004). Resonant skew scattering on spin-orbit split impurity states explains the large value of the SHE induced by nonmagnetic impurities like Ir, Ta, Lu or Sb. It also explains that the different signs of the SHE we observe at the beginning (Lu) and end (Ir) of the 5d series are related to the position of the resonant 5d states with respect to the Fermi level. We will present a theoretical model of resonant skew scattering accounting for our results and discuss the advantage of resonant scattering on other mechanisms. An extension to resonant side-jump scattering will be also presented.
- Published
- 2009
34. Mobile carriers generated by Ar+ ion-etching of SrTiO_3 single crystals
- Author
-
Copie, Olivier, Gentils, Aurelie, Tafra, Emil, Herranz, Gervasi, Basletić, Mario, Carretero, Cécile, Bouzehouane, Karim, Fusil, S., Bibes, Manuel, Deranlot, Cyrile, Fortuna, F., Hamzić, Amir, and Barthélémy, Agnes
- Subjects
spintronics ,STO heterostructures ,high mobility electron gas ,ion etching - Abstract
The future developments of new spintronic devices require high mobility 2DEG to inject and manipulate spins. Recently, such high mobility electron gas has been reported in the LaAlO_3/SrTiO_3 system and attributed to charge transfer at the polar interface. Such oxide based 2DEG is promising since it could be combined with other oxide materials taking advantage of their attractive versatility and multifunctional character. In this charge transfer mechanism the carrier concentration is very high, about 10^21 cm^(-3) and presents a moderate mobility compared to doped SrTiO3 single crystal. An alternative way to obtain high mobility electron gas while controlling the carrier concentration and its extension is by ion etching. We will present analysis of the distribution of defects and mobile carriers generated by means of preferential ion-beam etching of SrTiO_3 single crystals by combining positron annihilation spectroscopy (PAS), conductive-tip atomic force microscopy (CT-AFM) and low temperature magnetotransport. We demonstrate that vacancies generated at the surface by room-temperature ion irradiation diffuse on the micron scale and that consequently, carriers are distributed on the same scale.
- Published
- 2009
35. Etude de l’ origine des propriétés magnétiques de Co-(La, Sr)TiO_3
- Author
-
Copie, Olivier, Carretero, C., Herranz, Gervasi, Bibes, Manuel, Mattana, Richard, Basletić, Mario, Tafra, Emil, Bouzehouane, Karim, Fusil, S., Jaffres, Henri, Jacquet, Eric, Deranlot, Cyrile, Maurice, Jean Luc, Cros, Vincent, Bencok, P., Hamzić, Amir, Petroff Frederic, and Barthélémy, Agnes
- Subjects
oxides magnétiques dilués ,propriétés magnétiques et de transport - Abstract
La recherche portant sur les semiconducteurs magnétiques est d’ une grande importance pour l’ électronique de spin. Récemment des expériences ont aussi suggéré l’ existence de ferromagnétisme dans La_0.5Sr_0.5Ti_O_(3-delta) dopé avec du cobalt. Contrairement a d’ autres systemes dilués, celui-ci présente l’ originalité d’ avoir comme matrice hôte un métal fortement corrélé et non semiconducteurs, ce qui est susceptible de donner lieu a des mécanismes d’ échange de nature différente. Nous avons suivi cette approche en dopant SrTiO_3, préalablement dopé avec du lanthane, avec l.5% de cobalt (Co-LSTO). Les échantillons ont été fabriqués par ablation laser pulsé avec un laser Nd:YAG. Dans le but de comprendre l’ origine des propriétés magnétiques de Co-LSTO, nous avons procédé a une large étude structurale, ainsi qu’ a la mesure d’ une polarisation en spin pour des jonctions tunnels avec des électrodes de Co-LSTO et nous avons trouvé que les conditions de croissance, comme la pression partielle d’ oxygè ; ; ne, ont une influence importante sur les propriétés magnétiques, révélant le rôle des défauts (lacunes d’ oxygene, p.ex.) Pour mesurer la polarisation en spin du matériau, des jonctions tunnels à ; ; base de Co-LSTO ont été fabriquées par lithographie optique. La mesure de la magnétorésistance tunnel TMR pour des jonction Co-LSTO/LAO/Co donne des valeurs de TMR de l’ ordre de 20% ce qui nous permettent de déduire une polarisation en spin pour Co-LSTO de l’ ordre de 80%. Les expériences de spectroscopie d’ absorption de rayon X et de dichroï ; ; sme circulaire magnétique nous ont permis de sonder les états électroniques des atomes de cobalt et de titane, important pour comprendre les origines microscopique des propriétés magnétiques nos films de Co-LSTO. En particulier, les signatures spectrales du XAS et de l’ XMCD indiquent que le cobalt est dans un état ionique, coexistant dans certains cas avec du Co métallique. Au vu de l’ ensemble de ces résultats, nous tenterons de dégager des conclusions quant a la nature du ferromagnétisme observé dans les couches minces de Co-LSTO.
- Published
- 2008
36. Origin of high mobility in LaAlO3/SrTiO3 structures
- Author
-
Herranz, Gervasi, Basletić, Mario, Bibes, Manuel, Maurice, Jean-Luc, Copie, Olivier, Carretero, Cécile, Tafra, Emil, Jacquet, Eric, Bouzehouane, Karim, Deranlot, Cyrile, Hamzić, Amir, Barthélémy, Agnes, and Fert, Albert
- Subjects
electronic transport in interface structures ,diffusion of impurities ,high-field and nonlinear effects - Abstract
We have shown, using magnetotransport measurements in high magnetic fields (SdH oscillations and Hall effect), that LAO/STO is not a 2D system, but 3D system. High mobility in this system is due to the doping of STO substrate by oxygen vacancies, and this happens during growth, but only in low oxygen pressure. In higher oxygen pressures, LAO/STO structure is no more of high mobility type.
- Published
- 2007
37. Origine et perspectives de la haute mobilité dans des structures de LaAlO_3/SrTiO_3
- Author
-
Herranz, Gervasi, Basletić, Mario, Bibes, Manuel, Copie, Olivier, Carretero, Cécile, Tafra, Emil, Jacquet, Eric, Bouzehouane, Karim, Deranlot, Cyrile, Hamzić, Amir, Contour, Jean-Pierre, Barthélémy, Agnes, and Fert, Albert
- Subjects
oxides magnétiques dilués ,magnétorésistance ,Shubnikov - de Haas ,mobilité - Abstract
Nous avons examiné les propriétés de magnétotransport de couches minces de LAO sur des substrats de STO(001) terminés TiO_2 déposées dans des pressions dans une large range de pressions (10^-6 -10^-3 mbar). On a observé que seulement les échantillons déposés aux pressions d' oxygene < 10^-5 mbar possedent une haute mobilité, tandis que les échantillons déposés aux pressions supérieures ont des résistances progressivement croissantes. Ce résultat est indicatif du fait que le déficit d' oxygene joue un rôle essentiel dans la conductivité de ces systemes. Pour analyser la dimensionnalité des échantillons avec la haute mobilité (>10^4 cm² ; /Vs) on a mesuré la magnétorésistance (MR) avec le champ magnétique appliqué dans le plan de l’ échantillon ou parallele au courant dans le plan de l' échantillon. Les deux MR montrent des oscillations de Shubnikov - de Haas (SdH) pour des températures T < 4 K et des champs B > 6 T. Ces oscillations disparaissent progressivement pour T > 1.5 K, comme attendu. L' observation d' oscillations SdH avec la meme fréquence dans les deux configurations exclut absolument la possibilité de confinement des porteurs a l' interface. Les mesures d' effet SdH et d' effet Hall ont permis une mesure plus précise de la taille de l' épaisseur du systeme conducteur: quelques centaines de microns. Cette épaisseur est en accord avec des calculs basés sur les coefficients de diffusion des lacunes d'oxygene déterminés expérimentalement dans des monocristaux de STO. En fait, différents systemes basés sur STO montrent la meme dépendance en température de la mobilité et la résistance que celles des structures LAO/STO déposées à ; basse pression. Ça c'est une forte évidence de l'origine commune de la haute mobilité: le dopage par des lacunes d'oxygene dans le STO, avec des concentrations entre 10^17 et 10^19 cm^-3. Ces résultats ouvrent des perspectives intéressantes pour l'électronique d'oxydes, car ils pourraient etre utilisés pour fabriquer des heterostructures intégrant des oxydes multifonctionnels avec du STO ayant haute mobilité pour des dispositifs électroniques basés entierement sur des oxydes.
- Published
- 2007
38. High Mobility in LaAlO_3/SrTiO_3 Heterostructures: Origin, Dimensionality and Perspectives
- Author
-
Herranz, Gervasi, Basletić, Mario, Bibes, Manuel, Maurice, Jean-Luc, Copie, Olivier, Carretero, Cécile, Tafra, Emil, Jacquet, Eric, Bouzehouane, Karim, Deranlot, Cyrile, Hamzić, Amir, Barthélémy, Agnes, and Fert, Albert
- Subjects
diluted magnetic oxides ,magnetoresistance ,Shubnikov - de Haas ,mobility ,spintronics - Abstract
LaAlO_3/SrTiO_3 (LAO/STO) structures showing high mobility conduction have recently raised great expectations as they might represent a major step towards the conception of all-oxide electronics devices. The low-temperature high mobility was found for LAO films deposited on STO substrates at oxygen pressures below 10^-4 mbar. Generally, this metallic behavior has been ascribed to charge transfer effects at the interface between the insulators LAO and STO. For the development of oxide-based electronic devices a full understanding of the dimensionality and origin of this conducting electronic system is crucial. We have investigated the magnetotransport properties of LAO films epitaxially grown on STO(001) substrates in a wide range of deposition pressures. We show that metallic behavior and high mobility are only obtained when the films are deposited at low pressure (
- Published
- 2007
39. Engineering high-mobility in SrTiO_3-based structures
- Author
-
Herranz, Gervasi, Basletić, Mario, Copie, Olivier, Bibes, Manuel, Carrétéro, Cécile, Tafra, Emil, Jacquet, Eric, Bouzehouane, Karim, Fortuna, F., Deranlot, Cyrile, Hamzić, Amir, Barthélémy, Agnes, and Fert, Albert
- Subjects
diluted magnetic oxides ,magnetoresistance ,Shubnikov - de Haas ,mobility ,spintronics - Abstract
The future development of micro- and nanoelectronic devices based on oxide structures requires novel materials with high carrier mobility. In this regard, SrTiO_3 (STO) is being intensively investigated due to the dramatic sensitivity of its electronic properties to extrinsic impurity doping. Stoichiometric STO is a band insulator, but an insulator-to-metal transition is induced when STO is doped with extrinsic impurities such as La, Nb or oxygen vacancies with concentrations above 10^16 cm^ -3. In these conditions, the sheet resistance can be as low as 0.01 ohm sq and the electronic mobility can exceed 10^4 cm^2/Vs at low temperature. Vacuum annealing at high temperatures has been the traditional method to dope STO with oxygen vacancies, but recently we have demonstrated that this doping can also be achieved at a much enhanced rate by thin film deposition of oxides on STO substrates at low oxygen pressure and high temperatures. We will address both theoretically and experimentally the mechanisms of oxygen vacancy formation and diffusion in STO to provide a quantitative approach to control the electronic properties of STO. Finally, we will also present results on the generation of carriers in STO, with the objective of achieving two-dimensional conduction. For this purpose, high-magnetic field transport characterization at low temperature is a powerful tool to get insight on the electronic properties and the dimensionality of the high-mobility gas created in STO by the above-mentioned methods.
- Published
- 2007
40. Reversible and irreversible current induced domain wall motion in spin valve stripes
- Author
-
Laribi, Sana, Cros, Vincent, Grolier, Julie, Anane, A., Hamzić, Amir, Deranlot, Cyrile, Martínez, E., López-Díaz, L., Faini, Giancarlo, Zol, S., Fournel, R., and Fert, Albert
- Subjects
Condensed Matter::Materials Science ,spintronics ,domain wall ,spin transfer torque - Abstract
We present results on current-induced domain wall motion in Co/Cu/CoFeB and Co/Cu/NiFe trilayered stripes. We find that the threshold current densities in our CoFeB spin valve stripes are around 10^6 A/cm^2 at zero magnetic field i.e. about one order of magnitude smaller than in our NiFe spin valve stripes (that is about two orders of magnitude smaller than in single NiFe stripes). The motion of the domain wall can be reversible or irreversible depending on the experimental conditions. In the irreversible regime, we observe switching of the spin valve by irreversible domain wall displacement in the free layer. The domain wall displacement is field-assisted when the applied field acts in the same direction as the spin transfer torque. The switching current density decreases as the applied field increases. This feature can have interesting applications in spintronics devices such as magnetoresistive random access memories. When the applied field torque is opposed to the spin transfer one, and above a threshold field, we observe a reversible displacement of the domain wall (corresponding to a peak in the differential resistance measurements). This can be ascribed to the onset of domain wall fluctuations, which is confirmed by micromagnetic simulations, taking into account the non adiabaticity in the spin transfer model. To understand the origin of the reversible domain wall behavior, we have performed time dependent resistance measurements that show evidences of domain wall fluctuations dominated by telegraph noise. The domain wall fluctuations occur between two well-defined states, corresponding to domain wall pinning centers distant of 400 nm. The dwell times are measured in the two states as a function of both the magnetic field and the current. The main features of the fluctuations are probably linked to the energy form of the pinning potentials.
- Published
- 2007
41. Interdependency of Subsurface Carbon Distribution and Graphene–Catalyst Interaction
- Author
-
Weatherup, Robert S., primary, Amara, Hakim, additional, Blume, Raoul, additional, Dlubak, Bruno, additional, Bayer, Bernhard C., additional, Diarra, Mamadou, additional, Bahri, Mounib, additional, Cabrero-Vilatela, Andrea, additional, Caneva, Sabina, additional, Kidambi, Piran R., additional, Martin, Marie-Blandine, additional, Deranlot, Cyrile, additional, Seneor, Pierre, additional, Schloegl, Robert, additional, Ducastelle, François, additional, Bichara, Christophe, additional, and Hofmann, Stephan, additional
- Published
- 2014
- Full Text
- View/download PDF
42. Sub-nanometer Atomic Layer Deposition for Spintronics in Magnetic Tunnel Junctions Based on Graphene Spin-Filtering Membranes
- Author
-
Martin, Marie-Blandine, primary, Dlubak, Bruno, additional, Weatherup, Robert S., additional, Yang, Heejun, additional, Deranlot, Cyrile, additional, Bouzehouane, Karim, additional, Petroff, Frédéric, additional, Anane, Abdelmadjid, additional, Hofmann, Stephan, additional, Robertson, John, additional, Fert, Albert, additional, and Seneor, Pierre, additional
- Published
- 2014
- Full Text
- View/download PDF
43. Giant Electroresistance of Super-tetragonal BiFeO3-Based Ferroelectric Tunnel Junctions
- Author
-
Yamada, Hiroyuki, primary, Garcia, Vincent, additional, Fusil, Stéphane, additional, Boyn, Sören, additional, Marinova, Maya, additional, Gloter, Alexandre, additional, Xavier, Stéphane, additional, Grollier, Julie, additional, Jacquet, Eric, additional, Carrétéro, Cécile, additional, Deranlot, Cyrile, additional, Bibes, Manuel, additional, and Barthélémy, Agnès, additional
- Published
- 2013
- Full Text
- View/download PDF
44. Stabilization of perpendicular magnetic anisotropy in CeO2 films deposited on Co/Pt multilayers.
- Author
-
Figueiredo-Prestes, Nicholas, Zarpellon, Juliana, Jurca, Hugo F., Fernandes, Vilmar, Varalda, José, Schreiner, Wido H., Mosca, Dante H., Fichtner, Paulo F. P., Fabrim, Zacarias E., Bouzehouane, Karim, Deranlot, Cyrile, and George, Jean-Marie
- Published
- 2016
- Full Text
- View/download PDF
45. Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
- Author
-
Dlubak, Bruno, primary, Martin, Marie-Blandine, additional, Weatherup, Robert S., additional, Yang, Heejun, additional, Deranlot, Cyrile, additional, Blume, Raoul, additional, Schloegl, Robert, additional, Fert, Albert, additional, Anane, Abdelmadjid, additional, Hofmann, Stephan, additional, Seneor, Pierre, additional, and Robertson, John, additional
- Published
- 2012
- Full Text
- View/download PDF
46. Unveiling Self‐Assembled Monolayers' Potential for Molecular Spintronics: Spin Transport at High Voltage
- Author
-
Galbiati, Marta, primary, Barraud, Clément, additional, Tatay, Sergio, additional, Bouzehouane, Karim, additional, Deranlot, Cyrile, additional, Jacquet, Eric, additional, Fert, Albert, additional, Seneor, Pierre, additional, Mattana, Richard, additional, and Petroff, Frédéric, additional
- Published
- 2012
- Full Text
- View/download PDF
47. A ferroelectric memristor
- Author
-
Chanthbouala, André, primary, Garcia, Vincent, additional, Cherifi, Ryan O., additional, Bouzehouane, Karim, additional, Fusil, Stéphane, additional, Moya, Xavier, additional, Xavier, Stéphane, additional, Yamada, Hiroyuki, additional, Deranlot, Cyrile, additional, Mathur, Neil D., additional, Bibes, Manuel, additional, Barthélémy, Agnès, additional, and Grollier, Julie, additional
- Published
- 2012
- Full Text
- View/download PDF
48. Self-Assembled Monolayer-Functionalized Half-Metallic Manganite for Molecular Spintronics
- Author
-
Tatay, Sergio, primary, Barraud, Clément, additional, Galbiati, Marta, additional, Seneor, Pierre, additional, Mattana, Richard, additional, Bouzehouane, Karim, additional, Deranlot, Cyrile, additional, Jacquet, Eric, additional, Forment-Aliaga, Alicia, additional, Jegou, Pascale, additional, Fert, Albert, additional, and Petroff, Frédéric, additional
- Published
- 2012
- Full Text
- View/download PDF
49. Nanomagnetism of cobalt ferrite-based spin filters probed by spin-polarized tunneling
- Author
-
Matzen, Sylvia, primary, Moussy, Jean-Baptiste, additional, Mattana, Richard, additional, Bouzehouane, Karim, additional, Deranlot, Cyrile, additional, and Petroff, Frédéric, additional
- Published
- 2012
- Full Text
- View/download PDF
50. Highly efficient spin transport in epitaxial graphene on SiC
- Author
-
Dlubak, Bruno, primary, Martin, Marie-Blandine, additional, Deranlot, Cyrile, additional, Servet, Bernard, additional, Xavier, Stéphane, additional, Mattana, Richard, additional, Sprinkle, Mike, additional, Berger, Claire, additional, De Heer, Walt A., additional, Petroff, Frédéric, additional, Anane, Abdelmadjid, additional, Seneor, Pierre, additional, and Fert, Albert, additional
- Published
- 2012
- Full Text
- View/download PDF
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.