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High domain wall velocity at zero magnetic field induced by low current densities in spin-valve nanostripes
- Source :
- Applied Physics Express 2 (2009) 023003
- Publication Year :
- 2008
-
Abstract
- Current-induced magnetic domain wall motion at zero magnetic field is observed in the permalloy layer of a spin-valve-based nanostripe using photoemission electron microscopy. The domain wall movement is hampered by pinning sites, but in between them high domain wall velocities (exceeding 150 m/s) are obtained for current densities well below $10^{12} \unit{A/m^2}$, suggesting that these trilayer systems are promising for applications in domain wall devices in case of well controlled pinning positions. Vertical spin currents in these structures provide a potential explanation for the increase in domain wall velocity at low current densities.<br />Comment: Published version, Applied Physics Express 2, 023003 (2009) http://dx.doi.org/10.1143/APEX.2.023003
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Applied Physics Express 2 (2009) 023003
- Publication Type :
- Report
- Accession number :
- edsarx.0810.3576
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1143/APEX.2.023003