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1. Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices

Author

Remi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, Christel Buj, Guillaume Marchand, Jerome Saint-Martin, Marco Pala, and Philippe Dollfus

Subjects
Avalanche breakdown probability, breakdown voltage, jitter, photon detection efficiency (PDE), single-photon avalanche diode (SPAD), technology computer-aided design (TCAD), Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.

Published
2022
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2. Quenching Statistics of Silicon Single Photon Avalanche Diodes

Author

Thibauld Cazimajou, Marco Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, and Philippe Dollfus

Subjects
Avalanche breakdown, Monte Carlo methods, avalanche photodiodes, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
Abstract

The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the investigation to the quenching of the photodetector circuit. We find out that the quenching of SPADs is probabilistic and strongly depends on the surrounding circuit, in particular on the so-called quenching resistance. Independently of the SPAD deadtime, it appears that the extinction time needed to suppress any avalanche event may vary over a very large range.

Published
2021
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3. Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs.

Author

Denis Rideau, Wilfried Uhring, R. A. Bianchi, Rémi Helleboid, Gabriel Mugny, Jérémy Grebot, Jean-Robert Manouvrier, R. Neri, F. Brun, Mohammadreza Dolatpoor Lakeh, Sven Rink, Jean-Baptiste Kammerer, Christophe Lallement, E. Lacombe, Dominique Golanski, Bruce Rae, T. M. Bah, F. Twaddle, V. Quenette, G. Marchand, Christel Buj, R. Fillon, Y. Henrion, Isobel Nicholson, Megan Agnew, M. Basset, R. Perrier, M. Al-Rawhani, Bastien Mamdy, S. Pellegrin, Gilles Gouget, P. Maciazek, Andre Juge, A. Dartigues, and Hélène Wehbe-Alause

Published
2023
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6. A self-sustaining Single Photon Avalanche Diode Model.

Author

Sven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, and Bruce Rae

Published
2022
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13. Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

Author

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, and Michel Haond

Published
2014
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15. Modeling of SPAD avalanche breakdown probability and jitter tail with field lines

Author

Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), and ANR-20-CE24-0004,GeSPAD,Diode à avalanche à photon unique en Germanium : de la caractérisation à la simulation avancée(2020)

Subjects
Materials Chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Condensed Matter Physics, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Electronic, Optical and Magnetic Materials
Abstract

International audience

Published
2022
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18. A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes

Author

Rémi Helleboid, Denis Rideau, Isobel Nicholson, Jeremy Grebot, Bastien Mamdy, Gabriel Mugny, Marie Basset, Megan Agnew, Dominique Golanski, Sara Pellegrini, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus, STMicroelectronics [Crolles] (ST-CROLLES), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Conception de Systèmes Hétérogènes (INL - CSH), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Université de Genève = University of Geneva (UNIGE), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), and ANR-20-CE24-0004,GeSPAD,Diode à avalanche à photon unique en Germanium : de la caractérisation à la simulation avancée(2020)

Subjects
Advection-Diffusion Monte Carlo (ADMC), jitter, Acoustics and Ultrasonics, technology computed aided design (TCAD), Condensed Matter Physics, avalanche breakdown probability, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, electronic transport, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], drift-diffusion, electronic avalanche, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Fokker-Planck, singlephoton avalanche diode (SPAD), Monte Carlo simulation, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]
Abstract

We present an efficient simulation method for electronic transport and avalanche in single-photon avalanche diodes (SPAD). Carrier transport is simulated in the real space using a particle Monte Carlo approach based on the Fokker–Planck point of view on an advection-diffusion equation, that enables us to reproduce mobility models, including electric fields and doping dependencies. The avalanche process is computed thanks to impact ionization rates implemented using a modified Random Path Length algorithm. Both transport and impact ionization mechanisms are computed concurrently from a statistical point of view, which allows us to achieve a full multi-particle simulation. This method provides accurate simulation of transport and avalanche process suitable for realistic three-dimensional SPADs, including all relevant stochastic aspects of these devices, together with a huge reduction of the computational time required, compared to standard Monte Carlo methods for charge carrier transport. The efficiency of our method empowers the possibility to precisely evaluate SPADs figures of merit and to explore new features that were untrackable by conventional methods. An extensive series of comparisons with experimental data on state-of-the art SPADs shows a very good accuracy of the proposed approach.

Published
2022
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19. Quenching Statistics of Silicon Single Photon Avalanche Diodes

Author

Remi Helleboid, Philippe Dollfus, Jeremy Grebot, Thibauld Cazimajou, Jérôme Saint-Martin, Denis Rideau, Marco G. Pala, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics, Quenching, Coupling, Photon, Silicon, Physics::Instrumentation and Detectors, Monte Carlo method, chemistry.chemical_element, Photodetector, Monte Carlo methods, Avalanche breakdown, TK1-9971, Electronic, Optical and Magnetic Materials, Computational physics, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Electrical engineering. Electronics. Nuclear engineering, avalanche photodiodes, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Biotechnology, Diode
Abstract

International audience; The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of avalanche breakdown and its timing and to extend the investigation to the quenching of the photodetector circuit. We find out that the quenching of SPADs is probabilistic and strongly depends on the surrounding circuit, in particular on the socalled quenching resistance. Independently of the SPAD deadtime, it appears that the extinction time needed to suppress any avalanche event may vary over a very large range.

Published
2021
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20. Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Author

Y. oussaiti, Marco G. Pala, E. Bourreau, H. Wehbe Alause, Dominique Golanski, Sara Pellegrini, T. Cazimajou, G. Mugny, Philippe Dollfus, Megan Agnew, C.E. Vlimant, Jérôme Saint-Martin, I. Nicholson, Bastien Mamdy, Remi Helleboid, A. Lopez, J. Grebot, Denis Rideau, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics, Photon, Detector, Monte Carlo method, Ranging, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Single-photon avalanche diode, 0103 physical sciences, Electronic engineering, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Figure of merit, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Diode, Jitter
Abstract

Single Photon Avalanche Diodes (SPAD) are key optoelectronic detectors for medical imaging, camera ranging and automotive laser imaging detection and ranging (LiDAR) applications. Today, most of SPADs in the Time Of Flight (TOF) market are composed of a micrometric Silicon PN junction associated to a proximity CMOS electronics biasing the system above the breakdown voltage. These devices present low noise, high pixel-matrix integration capabilities, but their Photon Detection Efficiency (PDE) is relatively modest in the near infrared operating region (achieving typically only few percent at a wavelength of 940 nm). A considerable optimisation of the SPAD design is currently on going at an industrial level with a view of increasing the PDE without compromising the timing statistic response to avalanche (Jitter) and its quench probability. Within these perspectives, standard commercial Technology-Computer-Assisted-Design (TCAD) simulations can only provide a limited guidance for technological and design splits optimisation since they are based on deterministic solvers that are unable to capture these stochastic figures of merit. Since the seminal work from Spinelli [1] clearly showing that Monte Carlo simulations predictions can compare favourably with experimental measurements of PDE and timing resolution, the Monte Carlo method can be considered to be a useful one for the design of improved structures. It has been recently applied to optimize the PDE and Jitter of Silicon [3] and InGaAs SPADs [4],[5]. In this abstract we report a rigorous comparison between Monte Carlo predictions and measurements of PDE and Jitter. We also discuss in detail, the quench probability of these diodes once in avalanche. This latter point has rarely been discussed in literature and to the best of our knowledge never addressed within a Monte Carlo perspective.

Published
2021
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21. Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Author

Anne Hémeryck, Nicolas Salles, Layla Martin-Samos, Sylvain Joblot, Antoine Jay, Pierre-Louis Julliard, Thomas Cabout, Fuccio Cristiano, Frederic Monsieur, Denis Rideau, Nicolas Guitard, Miha Gunde, Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), CNR Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche [Roma] (CNR), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)

Subjects
010302 applied physics, [PHYS]Physics [physics], Materials science, TCAD, Silicon, Monte Carlo method, chemistry.chemical_element, 02 engineering and technology, Kinetic Monte Carlo, 021001 nanoscience & nanotechnology, process simulation, 01 natural sciences, Computational physics, chemistry, Ab initio quantum chemistry methods, 0103 physical sciences, Boron-Oxygen complex, Process simulation, Diffusion (business), 0210 nano-technology, Technology CAD, Refining (metallurgy)
Abstract

International audience; The diffusion path, formation energies and possible charge states of O i , O 2i and BO 2 complex are determined using ab initio calculations. We propose an ab initio based calibration for Kinetic Monte Carlo model with the aim to make possible the simulation of the formation of the BO 2 complex for process simulation.

Published
2021
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22. Dark Count Rate in Single-Photon Avalanche Diodes: characterization and modeling study

Author

Christel Buj, Jean Coignus, Mathieu Sicre, Bastien Mamdy, Megan Agnew, Isobel Nicholson, Francis Calmon, Dominique Golanski, Sara Pellegrini, Remi Helleboid, Denis Rideau, David Roy, STMicroelectronics [Crolles] (ST-CROLLES), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
Diode modeling, Complementary metal-oxide-semiconductor technologies, Photon, Electronic design automation, Technology computer aided design, Temperature measurement, Oxide semiconductors, Thermal, Range (statistics), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Breakdown probability, Diode, Probability, Physics, Modelling studies, Photons, Semiconductor device manufacture, Avalanche diodes, Characterization studies, Solver, CMOS integrated circuits, Particle beams, Computational physics, Characterization (materials science), Metals, Single photon avalanche diode, Dark count rate, Diode characterization, MOS devices, Rate measurements, Voltage
Abstract

International audience; Dark Count Rate (DCR) in Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor technology is characterized and analyzed with a comprehensive simulation methodology. Based on a series of measurements of SPAD with various architectures, on an extended range of voltages and temperatures, the DCR measurements are correlated to the spatial localization of traps within the device and their parameters. To this aim, process and electrical simulations using Technology Computer-Aided Design (TCAD) tools are combined with an in-house McIntyre solver to compute the breakdown probability (Pt). The traps are accounted for using thermal SRH carrier generation-recombination mechanism which is coupled with the position-dependent breakdown probability. This rigorous methodology makes it possible to directly compare with DCR measurements, since only generated carriers with a non-negligible breakdown probability are considered

Published
2021
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23. Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Author

L. Martin Samos, Nicolas Richard, P.L. Julliard, Denis Rideau, Anne Hémeryck, A. LeRoch, Vincent Goiffon, Filadelfo Cristiano, Antoine Jay, S. de Gironcoli, Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE), STMicroelectronics (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Université Toulouse - Jean Jaurès - UT2J (FRANCE), Université Toulouse 1 Capitole - UT1 (FRANCE), CNR Istituto Officina dei Materiali - IOM (Rome, Italy), Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), CEA DAM ILE-DE-FRANCE - Bruyères-le-Châtel [Arpajon] (CEA DAM IDF), CNR Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche [Roma] (CNR), Scuola Internazionale Superiore di Studi Avanzati / International School for Advanced Studies (SISSA / ISAS), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020), Centre d'Études de Limeil-Valenton (CEA-DAM), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)

Subjects
Band gap, Radiation effects, 02 engineering and technology, 01 natural sciences, Signal, Settore FIS/03 - Fisica della Materia, Atomic measurements, Metastability, 0103 physical sciences, cross sections, Cluster (physics), Traitement du signal et de l'image, Electronics, defects, 010302 applied physics, Physics, [PHYS]Physics [physics], Modulation, Semiconductor device measurement, business.industry, defects electronic states, Time measurement, 021001 nanoscience & nanotechnology, Discrete Fourier transforms, Computational physics, Semiconductor, Dark current, random telegraph signal, (SISPAD)(SISPAD)Dark current, 0210 nano-technology, business, electronic states, Switches
Abstract

International audience; The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that: (i) a cluster of defects is highly metastable, (ii) it introduces several electronic states in the band gap, (iii) it has an electronic cross section much higher than the one of point defects. These three points can simultaneously explain why an electronhole generation rate can switch with time, while respecting the experimental measurement.

Published
2021
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24. Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes

Author

G. Mugny, Denis Rideau, Philippe Dollfus, J.R. Manouvrier, J. Grebot, E. Lacombe, Helene Wehbe-Alause, V. Quenette, Bastien Mamdy, Marco G. Pala, Y. oussaiti, Christel Buj, A. Lopez, Megan Agnew, Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)

Subjects
Physics::Instrumentation and Detectors, 02 engineering and technology, 01 natural sciences, law.invention, Computer Science::Hardware Architecture, law, Verilog-A, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], Electronic circuit, Diode, 010302 applied physics, Quenching, Physics, business.industry, 021001 nanoscience & nanotechnology, Chip, Photodiode, Picosecond, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Pulse-width modulation
Abstract

We present a Verilog-A model accounting for the temporal avalanche buildup and its statistics in Single-Photon Avalanche Diodes (SPADs). This physics-based approach is compared to TCAD mixed-mode analyzing predictions, as well as measurements. The buildup that can be in the order of hundreds picoseconds, affects the statistical pulse width distribution, which is experimentally verified. Furthermore, we address in detail the voltage swing across the device during avalanche and its quenching, studying its impact on power consumption. This model can help a chip designer to optimize circuits for quenching the SPAD photodiode.

Published
2020
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25. Implant heating contribution to amorphous layer formation: a KMC approach

Author

Filadelfo Cristiano, F. Hilario, Frederic Monsieur, P.L. Julliard, P. Dumas, Anne Hémeryck, Denis Rideau, Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
010302 applied physics, Work (thermodynamics), Materials science, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Layer thickness, Amorphous solid, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Wafer, Kinetic Monte Carlo, Composite material, 0210 nano-technology, Layer (electronics)
Abstract

International audience; The present work investigates the influence of implantation induced heating on the amorphization profile in silicon wafer. A simulation approach based on a Kinetic Monte Carlo method is compared to experimental implantations and characterizations. We demonstrate that a backside pressure cooling can be used to tune amorphous layer thickness.

Published
2020
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26. Experimental ${g}_{m}/{I}_{{D}}$ Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

Author

Denis Rideau, Jean-Michel Sallese, Gilles Gouget, Salim El Ghouli, Frederic Monsieur, Patrick Scheer, Andre Juge, Thierry Poiroux, Christophe Lallement, Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Physics, Condensed matter physics, Transconductance, Transistor, Semiconductor device modeling, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, CMOS, law, Logic gate, 0103 physical sciences, MOSFET, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Voltage
Abstract

Transconductance efficiency ( ${g}_{m}/{I}_{D}$ ) is an essential design synthesis tool for low-power analog and RF applications. In this paper, the invariance of ${g}_{m}/{I}_{D}$ versus normalized drain current curve is analyzed in an asymmetric double-gate (DG) fully depleted MOSFET. This paper studies the breakdown of this invariance versus back-gate voltage, transistor length, temperature, drain-to-source voltage, and process variations. The unforeseeable invariance is emphasized by measurements of a commercial 28-nm ultrathin body and box fully depleted Silicon-on-Insulator (SOI) (FDSOI) CMOS technology, thus supporting the ${g}_{m}/{I}_{D}$ -based design methodologies usage in DG FDSOI transistors sizing.

Published
2018
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27. Advances in 3D CMOS image sensors optical modeling: combining realistic morphologies with FDTD

Author

Sofiane Guissi, Daniel Sieger, Axel Crocherie, Denis Rideau, Calderon Stephane, B. Vianne, and Helene Wehbe-Alause

Subjects
010302 applied physics, Process modeling, Computer science, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Finite-difference time-domain method, Topology (electrical circuits), 02 engineering and technology, Solid modeling, 021001 nanoscience & nanotechnology, 01 natural sciences, CMOS, 0103 physical sciences, Electronic engineering, Quantum efficiency, Sensitivity (control systems), Image sensor, 0210 nano-technology
Abstract

This paper describes an innovative methodology to investigate the relationship between device morphology and the optical performance of CMOS image sensors. By coupling a FDTD-based 3D Maxwell solver with silicon-accurate process modeling software, we have been able to analyze the sensitivity of image sensor quantum efficiency with respect to statistical variations in nm-scale device topology. Additionally, we studied pyramidal silicon structuration for quantum efficiency enhancement as proposed in [1].

Published
2019
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28. Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations

Author

Layla Martin-Samos, Nicolas Richard, Denis Rideau, Anne Hémeryck, Gabriela Herrero-Saboya, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), University of Nova Gorica, STMicroelectronics [Crolles] (ST-CROLLES), Centre de Recherche Saint-Antoine (CRSA), Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Sorbonne Université (SU), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, University of Nova Gorica (UNG), Centre de Recherche Saint-Antoine (CR Saint-Antoine), Sorbonne Université (SU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-CHU Saint-Antoine [AP-HP], and Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP)-Sorbonne Université (SU)-Assistance publique - Hôpitaux de Paris (AP-HP) (AP-HP)-Sorbonne Université (SU)

Subjects
010302 applied physics, GW approximation, Materials science, Silicon, Band gap, silicon, chemistry.chemical_element, 02 engineering and technology, [object Object], 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, Crystallographic defect, chemistry, Impurity, impurity, first- principles, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], point defects, titanium, Crystalline silicon, 0210 nano-technology, Ground state, Titanium
Abstract

International audience; We demonstrate the presence of small Jahn-Teller distortions for interstitial titanium in silicon at different charge states by performing ground state DFT calculations. We prove the existence of three charged transition levels within the band gap by using a non-empirical parameter-free approach, based on the GW approximation, in agreement with DLTS measurements.

Published
2019
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29. Characterization of Heated Ion Implantation for non Amorphizing Conditions and Correlation with Kinetic Monte Carlo Simulations

Author

Vincent Lu, Fuccio Cristiano, Denis Rideau, Remi Beneyton, Nicolas Guitard, Marc Juhel, Edwin Arevalo, Wei Zou, C. Borowiak, Thomas Nassiet, Frederic Monsieur, E. Ghegin, L. Pinzelli, J. Borrel, K. Dabertrand, Romain Duru, L. Clément, Evan Oudot, and Sylvain Joblot

Subjects
010302 applied physics, Condensed Matter::Materials Science, Work (thermodynamics), Ion implantation, Photoluminescence, Materials science, 0103 physical sciences, Radiative transfer, Kinetic Monte Carlo, 01 natural sciences, Molecular physics, Characterization (materials science)
Abstract

In this work, heated implantation impact on defect generation is observed for non-amorphizing conditions and specific anneal. Photoluminescence imaging method has been used and exhibits radiative defect density variation with chuck temperature. Moreover, to understand the behavior of such implantation in terms of defect generation and depth profile, effectiveness of Kinetic Monte Carlo (KMC) simulations is discussed.

Published
2018
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30. Integration of SPAD in 28nm FDSOI CMOS technology

Author

Dominique Golanski, Andreia Cathelin, Younes Benhammou, T. Chaves de Albuquerque, Francis Calmon, Patrick Pittet, Raphael Clerc, Denis Rideau, Sebastien Jouan, INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Hubert Curien [Saint Etienne] (LHC), Institut d'Optique Graduate School (IOGS)-Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS), INL - Conception de Systèmes Hétérogènes (INL - CSH), STMicroelectronics [Crolles] (ST-CROLLES), ARC6 research program 2016 no 16 – 005689 – 01, ARC 6 Rhones Alpes, and ANR-18-CE24-0010,SPAD-FDSOI,Intégration monolithique de SPAD dans une technologie CMOS FDSOI(2018)

Subjects
010302 applied physics, Computer science, business.industry, Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, Data acquisition, Single-photon avalanche diode, CMOS, Stack (abstract data type), Low-power electronics, 0103 physical sciences, Breakdown voltage, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract

This paper reports the first experimental results obtained on a Single Photon Avalanche Diode (SPAD) implemented, in a 28nm FDSOI CMOS technology. The main originality relies on the integration of the SPAD below the buried oxide with the logic on-top in the thin silicon layer, providing an intrinsic 3D stack. The expected benefits are a much higher fill factor with embedded high performance and low power electronics. A test-chip has been fabricated with the commercial STMicroelectronics CMOS28FDSOI technology without any design rule violation nor process customization. SPAD breakdown has been investigated with electroluminescence cartography and breakdown voltage measurements. Afterwards, first dark count rate measurements are reported according to temperature and excess bias. To our knowledge, it is the first demonstration of SPAD devices in a FDSOI CMOS technology. Based on these encouraging results, the study will be pursued for more statistical data acquisition and for SPAD characterization under illumination.

Published
2018
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31. Inter-band coupling in Empirical Pseudopotential Method based bandstructure calculations of group IV and III-V nanostructures

Author

G. Mugny, Denis Rideau, Marco G. Pala, David Esseni, STMicroelectronics [Crolles] (ST-CROLLES), Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Università degli Studi di Udine - University of Udine [Italie]

Subjects
Materials science, Nanostructure, Ge, linear combination of bulk bands, 02 engineering and technology, Empirical pseudopotentials, 01 natural sciences, Pseudopotential, InAs, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Linear combination, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Valence (chemistry), Condensed matter physics, Computer Science Applications1707 Computer Vision and Pattern Recognition, 021001 nanoscience & nanotechnology, Thermal conduction, bandstructure, Si, Modeling and Simulation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], 0210 nano-technology
Abstract

This paper presents a systematic analysis of the use of the linear combination of bulk bands based on the empirical pseudopotential method to obtain the bandstructure of confined nanostructures. The relevance of interband coupling between conduction and valence bands in III-V materials is highlighted.

Published
2018
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32. Impact of strain on access resistance in planar and nanowire CMOS devices

Author

Gerard Ghibaudo, Claude Tabone, Emmanuel Josse, Joris Lacord, Franck Arnaud, Remy Berthelon, M. Vinet, Yann-Michel Niquet, C. Le Royer, L. Bourdet, Denis Rideau, Didier Dutartre, O. Rozeau, F. Andneu, Pascal Nguyen, Alain Claverie, M. Casse, S. Barraud, François Triozon, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), nano 2017, ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, Materials science, business.industry, Spice, Semiconductor device modeling, Nanowire, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, PMOS logic, Silicon-germanium, Stress (mechanics), chemistry.chemical_compound, CMOS, chemistry, Logic gate, 0103 physical sciences, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
Abstract

session 17: CMOS integration; International audience; We fabricated and in-depth characterized advanced planar and nanowire CMOS devices, strained by the substrate (sSOI or SiGe channel) and by the process (CESL, SiGe source/drain). We have built a novel access resistance (R ACC ) extraction procedure, which enables us to clearly evidence the strong impact of back-bias and strain on R acc (-21% for 4 V V B and -53% for -1GPa stress on pMOS FDSOI). This is in agreement with Non-Equilibrium-Green-Functions (NEGF) simulations. This RAcc(strain) dependence has been introduced into SPICE, leading to +6% increase of the RO frequency under ε n/p =0.8%/-0.5% strain, compared to the state-of-the-art model. It is thus mandatory for predictive benchmarking and optimized IC designs.

Published
2017
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33. Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements

Author

F. Abbate, L. Schneider, Yann-Michel Niquet, G. Mugny, Christophe Delerue, E. Nolot, Denis Rideau, C. Kriso, François Triozon, Clement Tavernier, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), STMicroelectronics [Crolles] (ST-CROLLES), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics, Physique - IEMN (PHYSIQUE - IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
Materials science, 02 engineering and technology, 01 natural sciences, Molecular physics, Optics, Ellipsometry, 0103 physical sciences, Materials Chemistry, Dielectric function, Electrical and Electronic Engineering, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, ComputingMilieux_MISCELLANEOUS, [PHYS]Physics [physics], business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Varying thickness, Electronic, Optical and Magnetic Materials, Quantum dot, Content (measure theory), Particle, Spectroscopic ellipsometry, 0210 nano-technology, business, Layer (electronics)
Abstract

The optical response of strained SiGe alloys, as well as thin Si layers, is analyzed using a sp 3 d 5 s ∗ tight-binding model within the independent particle approximation. The theoretical results are compared to measurements obtained on samples with various Ge content and layer thicknesses. The dielectric function is extracted from spectroscopic ellipsometry allowing a separation of its real and imaginary parts. Theory and simulation show similar trends for the variation of the dielectric function of SiGe with varying Ge content. Variations are also well reproduced for thin Si layers with varying thickness and are attributed to quantum confinement.

Published
2017
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34. Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

Author

Michel Haond, C. Leroux, G. Reimbold, B. Mohamad, Gerard Ghibaudo, Denis Rideau, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 662175,H2020,ECSEL-2014-2,WAYTOGO FAST(2015)

Subjects
Buried oxide thickness, Materials science, Quantum simulator, Equivalent oxide thickness, 02 engineering and technology, Substrate (electronics), Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Gate oxide, 0103 physical sciences, Materials Chemistry, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Work function, Electrical and Electronic Engineering, Channel thickness, Effective work function, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, Fully depleted silicon on insulator, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Node (circuits), Equivalent oxide thickne, 0210 nano-technology, AND gate
Abstract

International audience; Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.

Published
2017
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35. Quantum Modeling of the Carrier Mobility in FDSOI Devices

Author

Denis Rideau, O. Nier, V. H. Nguyen, François Triozon, Ivan Duchemin, Yann-Michel Niquet, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[PHYS]Physics [physics], Electron mobility, Materials science, business.industry, Phonon, Scattering, Induced high electron mobility transistor, Silicon on insulator, Electron, Surface finish, [SPI.TRON]Engineering Sciences [physics]/Electronics, Electronic, Optical and Magnetic Materials, [SPI]Engineering Sciences [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Electrical and Electronic Engineering, business, Technology CAD, ComputingMilieux_MISCELLANEOUS
Abstract

We compute the electron and hole mobilities in ultrathin body and buried oxide, fully depleted silicon on insulator devices with various high-\(\kappa \) metal gate-stacks using nonequilibrium Green's functions (NEGF). We compare our results with experimental data at different back gate biases and temperatures. That way, we are able to deembed the different contributions to the carrier mobility in the films (phonons, front and back interface roughness, and remote Coulomb scattering). We discuss the role played by each mechanism in the front and back interface inversion regimes. We draw attention, in particular, to the clear enhancement of electron- and hole-phonons interactions in the films. These results show that FDSOI devices are a foremost tool to sort out the different scattering mechanisms in Si devices, and that NEGF can provide valuable inputs to technology computer aided design.

Published
2014
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36. Unexpected impact of germanium content in SiGe bulk PMOSFETs

Author

Denis Rideau, Antoine Cros, Gerard Ghibaudo, Julien Rosa, A. Soussou, Sebastien Haendler, C. Diouf, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Géosciences Paris Sud (GEOPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Infrasound, Gate stack, chemistry.chemical_element, Germanium, 02 engineering and technology, Dielectric, 01 natural sciences, Coulomb scattering, 0103 physical sciences, Materials Chemistry, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Phonon scattering, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Optoelectronics, 0210 nano-technology, Tin, business
Abstract

In this paper, we investigate the impact of silicon–germanium channel on PMOSFETs with TiN metal and HfSiON dielectrics gate stack. Performance increase with Ge incorporation in the channel is higher than theoretically expected. Threshold voltage is outstandingly lowered and mobility is highly improved. Poisson–Schrodinger simulations are carried out to interpret the experimental results. Room as well as low temperature mobility measurements and low frequency noise analysis are performed in order to better understand this unforeseen germanium influence. Smaller Coulomb scattering rates are clearly evidenced in SiGe devices, probably explaining the higher mobility.

Published
2013
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37. Electronic structure and electron mobility in Si 1– x Ge x nanowires

Author

Jing Li, Christophe Delerue, Denis Rideau, Yann-Michel Niquet, G. Mugny, François Triozon, Université de Genève (UNIGE), Théorie de la Matière Condensée (TMC ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), STMicroelectronics [Crolles] (ST-CROLLES), Université de Genève = University of Geneva (UNIGE), Théorie de la Matière Condensée (NEEL - TMC), and Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)

Subjects
010302 applied physics, [PHYS]Physics [physics], Electron mobility, Physics and Astronomy (miscellaneous), Condensed matter physics, Chemistry, Alloy, Nanowire, 02 engineering and technology, Electronic structure, engineering.material, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Condensed Matter::Materials Science, Effective mass (solid-state physics), 0103 physical sciences, engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Electronic properties
Abstract

We investigate the electronic structure and the electron mobility in Si1– xGex nanowires for relevant orientations ( ⟨ 001 ⟩ , ⟨ 110 ⟩, and ⟨ 111 ⟩) and diameters up to 8 nm based on atomistic models. The calculation of the electronic structure with random distribution of alloy atoms is compared to the virtual crystal approximation. The electronic properties such as the effective mass and the character of the lowest conduction subband are linked with the strong variations of the phonon-limited electron mobility with varying Ge concentrations. The effect of alloy disorder on the mobility is also discussed.

Published
2017
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39. A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

Author

Davide Garetto, Yann-Michel Niquet, Christophe Delerue, François Triozon, Denis Rideau, G. Mugny, Marco G. Pala, F.G. Pereira, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Synopsys Inc., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Archéologie des Amériques (ArchAm), Université Paris 1 Panthéon-Sorbonne (UP1)-Centre National de la Recherche Scientifique (CNRS), Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut d’Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520 (IEMN), Ecole Centrale de Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Physics, Condensed matter physics, Phonon, Quantum potential, Saturation velocity, Silicon on insulator, NEGF, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, QDD, 01 natural sciences, FDSOI, mobility, 0103 physical sciences, MOSFET, Surface roughness, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Quantum, Saturation (magnetic), ComputingMilieux_MISCELLANEOUS, quantum transport
Abstract

session C6L-C: Advanced TCAD Developments; International audience; Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract quantities relevant to Quantum Drift-Diffusion (QDD) solvers, such as the quasi-Fermi level, the quantum potential and the quasi-ballistic saturation velocity. In particular, the mobility in saturation regime is discussed and an approach based on the Scharfetter-Gummel scheme is presented, bridging the gap between NEGF and QDD frameworks.

Published
2016
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40. High and low-field contact resistances in trigate devices in a Non-Equilibrium Green's Functions framework

Author

Mikael Casse, Denis Rideau, Sebastien Martinie, Yann-Michel Niquet, Sylvain Barraud, Jing Li, L. Bourdet, J. Pelloux-Prayer, François Triozon, Laboratory of Atomistic Simulation (LSIM ), Modélisation et Exploration des Matériaux (MEM), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), STMicroelectronics [Crolles] (ST-CROLLES), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
010302 applied physics, Materials science, Field (physics), Condensed matter physics, Phonon, Scattering, Contact resistance, Doping, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, Impurity, Logic gate, 0103 physical sciences, Electronic engineering, Surface roughness, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract

We compute the contact resistances at low drain bias in Trigate and FinFET devices with widths and heights in the 4 to 24 nm range, using a Non-Equilibrium Green's Function approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. The analysis of the quasi-Fermi level profile reveals that the areas under the spacers are major contributors to the contact resistance at low field, due to the poor electrostatic control over the carrier density under the spacers. The impact of design parameters (cross-section and doping profile) on the contact resistance is analyzed and the simulations are compared to experimental data. At high drain bias, the contributions of phonons and impurities scattering in the source and drain are also computed and discussed.

Published
2016
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41. Design / technology co-optimization of strain-induced layout effects in 14nm UTBB-FDSOI CMOS: Enablement and assessment of continuous-RX designs

Author

Michel Haond, Maud Vinet, Alain Aurand, V. Farys, E. Baylac, A. Claverie, E. Petitprez, Emmanuel Josse, Raphael Bingert, M-A. Jaud, T. Poiroux, E. Bechet, Jean-Claude Marin, Didier Dutartre, S. Delmedico, Olivier Weber, C. Bernicot, E. Bernard, P. Sardin, F Andrieu, S. Ortolland, Joris Lacord, E. Serret, R. Berthelon, Patrick Scheer, A. Pofelski, Pierre Perreau, Denis Rideau, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, Delay improvements, Longitudinal stress, Nanobeam diffraction, Silicon on insulator, 02 engineering and technology, Ring oscillator, Integrated circuit design, VLSI circuits, 01 natural sciences, Integrated circuit layout, Integrated circuit testing, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Silicon on insulator technology, Leakage (electronics), Stress management, [PHYS]Physics [physics], 010302 applied physics, Fully depleted silicon-on-insulator, CMOS integrated circuits, Co-optimization, CMOS technology, 020202 computer hardware & architecture, CMOS, Inverter, Voltage
Abstract

cited By 4; International audience; We report on the main local layout effect in 14nm Ultra-Thin Buried oxide and Body Fully Depleted Silicon On Insulator (UTBB-FDSOI) CMOS technology [1]. This effect is demonstrated by Nano-Beam Diffraction to be directly induced by the strain in the SiGe channel and reproduced by an accurate electrical compact model. An original continuous-RX design optimizes the stress management, maintaining longitudinal stress component while relaxing the transverse one. A 28% ring oscillator delay improvement is experimentally demonstrated at same leakage for 1-finger inverter at VDD=0.8V supply voltage and a frequency gain up to 15% is simulated in a critical path of an A9 core. © 2016 IEEE.

Published
2016
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42. Hot carrier stress: Aging modeling and analysis of defect location

Author

Xavier Federspiel, Frederic Monsieur, Giulio Torrente, Clement Tavernier, Gerard Ghibaudo, David Roy, J. Coignus, Denis Rideau, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Engineering, Work (thermodynamics), TCAD modeling, 02 engineering and technology, Hot carrier stress, RD model, 01 natural sciences, law.invention, Stress (mechanics), Trap (computing), law, 0103 physical sciences, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Interface traps, 010302 applied physics, Flash degradation, business.industry, degradation assessment, HCI degradation, Transistor, Mechanics, 021001 nanoscience & nanotechnology, Flash (manufacturing), Stress conditions, 0210 nano-technology, business, Hot carrier degradation
Abstract

session 5a: Transistor Reliability; International audience; In this paper a complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented and its validity range extended respect to our previous work. Using the correlation of drifting electrical parameters, a simple technique for the analysis of trap distribution location is presented and physical insights on defect shape evolution are provided at different stress conditions.

Published
2016
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43. Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in $\langle \hbox{001}\rangle$-, $\langle \hbox{110}\rangle$-, and $\langle \hbox{111}\rangle$ -Oriented Si Nanowires

Author

Denis Rideau, Y-M Niquet, B. Videau, and Christian Delerue

Subjects
010302 applied physics, Physics, Electron mobility, Condensed matter physics, Scattering, Phonon, Nanowire, 02 engineering and technology, Electron, 021001 nanoscience & nanotechnology, 01 natural sciences, Boltzmann equation, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Effective mass (solid-state physics), Tight binding, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology
Abstract

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-force field model for phonons. The Boltzmann equation is then solved exactly for the low-field mobility. Compared to bulk Si, the electron mobilities are strongly reduced, but the hole mobilities can be enhanced in 〈111〉 and 〈110〉 NWs with diameters around 3.5 nm. The mobility, however, rapidly decreases with carrier concentration >; 1019 cm-3.

Published
2012
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44. Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Author

Herve Jaouen, Davide Garetto, Alban Zaka, Yusuf Leblebici, Denis Rideau, Yoann Mamy Randriamihaja, and Alexandre Schmid

Subjects
Condensed Matter::Quantum Gases, Frequency response, Silicon, Chemistry, chemistry.chemical_element, Trapping, Solver, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Computational physics, Trap (computing), CMOS, Materials Chemistry, Radiative transfer, Physics::Atomic Physics, Electrical and Electronic Engineering, Atomic physics, Energy (signal processing)
Abstract

A multiphonon-assisted model included in a Poisson–Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependencies of trap capture cross-sections with trap energy, depth, applied bias and temperature have been extracted, with the purpose of evaluating the accuracy of constant cross-section models adopted in compact and empirical approaches. The model has been applied to the extraction of interface trap concentrations and to the accurate AC analysis of the trap frequency response.

Published
2012
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45. SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Author

Frédéric Aniel, Nicolas Zerounian, Eloy Ramirez-Garcia, M. Michaillat, M. Enciso-Aguilar, and Denis Rideau

Subjects
Physics, Electron mobility, Computer simulation, Heterojunction bipolar transistor, Doping, Monte Carlo method, Relaxation (NMR), Condensed Matter Physics, Boltzmann equation, Electronic, Optical and Magnetic Materials, Computational physics, Materials Chemistry, Statistical physics, Electrical and Electronic Engineering, Convection–diffusion equation
Abstract

We present an original method for the detailed evaluation of different device region contributions to the whole SiGe:C heterojunction bipolar transistor transit time in the frame of modeling studies. This method is based on AC analysis with structures of several base widths. The two-dimensional hydrodynamic solver relies on analytical models of electron and hole mobilities, and of energy relaxation times, calculated from results of the Boltzmann Transport Equation in highly acceptor doped and strained SiGe:C, using a full band Monte Carlo solver. The simulation results are compared to DC and AC measurements and exhibit good agreement. The proposed transit time analysis scheme and the analytical model for mobilities and energy relaxation times may be used for device optimization, toward highest dynamic performances.

Published
2011
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46. Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

Author

Frédéric Aniel, Clement Tavernier, M. Michaillat, Herve Jaouen, and Denis Rideau

Subjects
Electron mobility, Materials science, Condensed matter physics, Scattering, Monte Carlo method, Alloy, Doping, Metals and Alloys, Surfaces and Interfaces, Crystal structure, engineering.material, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, Materials Chemistry, engineering, Relaxation (physics), Ternary operation
Abstract

Hole transport properties in relaxed and biaxially strained Si 1-x Ge x , Si 1-y C y and Si 1-x-y Ge x C y alloys are investigated using a Full-Band Monte Carlo simulator. Our results allow the extraction of bulk, in-plane and out-of-plane hole drift mobilities. Doping effects in SiGeC alloys are taken into account through an efficient ionized-impurity scattering model. This model is based on inverse momentum relaxation times derived from phase-shift theory. 1 A new alloy scattering model relevant to the case of random ternary alloys is presented. It involves two effective alloy potential parameters, which account for the respective scattering strengths of Ge and C in the crystal lattice. From our mobility results we have derived an analytical hole mobility model which includes dependencies upon doping concentration, doping type, Ge content and C content.

Published
2010
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47. On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs

Author

Clement Tavernier, M. Michaillat, Herve Jaouen, Yann-Michel Niquet, M. Feraille, and Denis Rideau

Subjects
Silicon, Condensed matter physics, chemistry.chemical_element, Silicon on insulator, Strained silicon, Condensed Matter Physics, Curvature, Electronic, Optical and Magnetic Materials, chemistry, Depletion region, MOSFET, Materials Chemistry, Density of states, Electronic engineering, Electrical and Electronic Engineering, Electronic band structure
Abstract

The confined states in strained silicon fully depleted silicon-on-insulator MOSFETs are investigated using full-band k.p method within the envelope-function approximation. Full-band calculations of important transport parameters – energy band shifts, curvature masses and density-of-state masses – show new results, rising the issues of the limit of simple models like the effective mass approximation and the 6-level k.p model.

Published
2009
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48. Robust EOT and effective work function extraction for 14 nm node FDSOI technology

Author

Michel Haond, B. Mohamad, Denis Rideau, G. Reimbold, Gerard Ghibaudo, Charles Leroux, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010), and European Project: 325633,EC:FP7:SP1-JTI,ENIAC-2012-2,PLACES2BE(2012)

Subjects
010302 applied physics, Work (thermodynamics), Materials science, Quantum simulator, Equivalent oxide thickness, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, Gate oxide, fully depleted silcon on insulator, 0103 physical sciences, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Work function, Node (circuits), buried oxide thickness, equivalent oxide thickness, Effective work function, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, AND gate, channel thickness
Abstract

session 10: end of Scaling and Beyond CMOS; International audience; Effective work function and equivalent oxide thickness are fundamental parameters for technology optimization. In this work, a comprehensive study is done on a large set of FDSOI devices. The extraction of the gate stack parameters is carried out by fitting experimental CV characteristics to quantum simulation, based on self-consistent solution of one dimensional Poisson and Schrodinger equations. A reliable methodology for gate stack parameters is proposed and validated. This study identifies the process modules that impact directly the effective work function from those that only affect the device threshold voltage, due to the device architecture. Moreover, the relative impacts of various process modules on channel thickness and gate oxide thickness are evidenced.

Published
2016
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49. Design of integrated capacitive modulators for 56Gbps operation

Author

Romuald Blanc, Maurin Douix, E. Batail, Sebastien Cremer, Eric Cassan, Delphine Marris-Morini, Denis Rideau, Laurent Vivien, Diego Perez-Galacho, Charles Baudot, Aurélie Souhaité, Nathalie Vulliet, and Frederic Boeuf

Subjects
Materials science, business.industry, Capacitive sensing, Bandwidth (signal processing), Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Data rate, law.invention, Capacitor, 020210 optoelectronics & photonics, Power consumption, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Insertion loss, Photonics, business
Abstract

We present TCAD simulation results for the integration of capacitive modulators in a 300mm SOI platform. We show that tuning the capacitor oxide thickness improves the bandwidth and the component efficiency, leading to 860μm active length, 56Gbps data rate and low power consumption (1.2Vpp).

Published
2016
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50. Contact resistances in Trigate devices in a Non-Equilibrium Green's Functions framework

Author

J. Pelloux-Prayer, Sylvain Barraud, Jing Li, François Triozon, Mikael Casse, Yann-Michel Niquet, L. Bourdet, Sebastien Martinie, and Denis Rideau

Subjects
010302 applied physics, Materials science, Total resistance, Condensed matter physics, Contact resistance, Doping, Nanotechnology, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Green S, Coulomb scattering, chemistry.chemical_compound, Cross section (physics), chemistry, 0103 physical sciences, Surface roughness, 0210 nano-technology, Doping profile
Abstract

We compute the contact resistances in Trigate and FinFET devices using a Non-Equilibrium Green's Functions approach. Electron-phonon, surface roughness and Coulomb scattering are taken into account. We show that the contact resistance represents a significant part of the total resistance of devices with sub-30 nm gate lengths. The analysis of the quasi-Fermi level profile reveals that the spacers between the heavily doped source/drain and the gate are major contributors to the contact resistance. We analyze the impact of different design parameters (cross section and doping profile in the contacts) on the electrical performances of the devices. The simulations are compared to experimental data.

Published
2016
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