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159 results on '"Den Hertog, Martien"'

1. The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM

Author

da Silva, Bruno C, Momtaz, Zahra S, Bruas, Lucas, Rouviére, Jean-Luc, Okuno, Hanako, Cooper, David, and Den-Hertog, Martien I

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of different STEM modes and the trade-off between spatial resolution and electric field sensitivity are studied. Two acquisition modes are compared: nanobeam and low magnification (LM) modes. A thermal noise free Medipix3 direct electron detector with high speed acquisition has been used to study the influence of low electron beam current and millisecond dwell times on the measured electric field and standard deviation. It is shown that LM conditions can underestimate the electric field values due to a bigger probe size used but provide an improvement of almost one order of magnitude on the signal-to-noise ratio, leading to a detection limit of 0.011MV/cm. It is observed that the CoM results do not vary with acquisition time or electron dose as low as 24 $e^-/A^2$, showing that the electron beam does not influence the built-in electric field and that this method can be robust for studying beam sensitive materials, where a low dose is needed.

Published
2022
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2. Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Author

da Silva, Bruno C., Momtaz, Zahra S., Monroy, Eva, Okuno, Hanako, Rouviere, Jean-Luc, Cooper, David, and den-Hertog, Martien I.

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution., Comment: 13 pages, 5 figures

Published
2022
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11. Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Author

Dosenovic, Djordje, primary, Dechamps, Samuel, additional, Vergnaud, Celine, additional, Pasko, Sergej, additional, Krotkus, Simonas, additional, Heuken, Michael, additional, Genovese, Luigi, additional, Rouviere, Jean-Luc, additional, den Hertog, Martien, additional, Le Van-Jodin, Lucie, additional, Jamet, Matthieu, additional, Marty, Alain, additional, and Okuno, Hanako, additional

Published
2023
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15. Nanoscale Reconfigurable Si Transistors: From Wires to Sheets and Unto Multi‐Wire Channels.

Author

Wind, Lukas, Behrle, Raphael, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., Sistani, Masiar, and Weber, Walter M.

Subjects
FIELD-effect transistors, SEQUENTIAL circuits, COMBINATIONAL circuits, THRESHOLD voltage, AUTODIDACTICISM
Abstract

In this work, bottom‐up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) reconfigurable field‐effect transistors (RFETs). Evaluating the key parameters of these transistors regarding the on‐ and off‐currents as well as threshold voltages for n‐ and p‐type operation exhibit a high degree of symmetry. Most notably also a low device‐to‐device variability is achieved. In this respect, the investigated Al–Si material system reveals its relevance for reconfigurable logic cells obtained from Si NSs. To show the versatility of the proposed devices, this work reports on a combinational wired‐AND gate obtained from a multi‐gate RFET. Additionally, up‐scaling the current is achieved by realizing a MW RFET without compromising reconfigurability. The Al–Si–Al platform has substantial potential to enable complex adaptive and self‐learning combinational and sequential circuits with energy efficient and small footprint computing paradigms as well as for native components for hardware security circuits. [ABSTRACT FROM AUTHOR]

Published
2024
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22. Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures.

Author

Böckle, Raphael, Sistani, Masiar, Bažíková, Martina, Wind, Lukas, Sadre‐Momtaz, Zahra, den Hertog, Martien I., Murphey, Corban G. E., Cahoon, James F., and Weber, Walter M.

Subjects
ADAPTIVE computing systems, HETEROSTRUCTURES, FIELD-effect transistors, LOGIC circuits, SEMICONDUCTOR technology, INDIUM gallium zinc oxide, NANOWIRES
Abstract

Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field‐effect transistors, capable of dynamically altering the operation mode between n‐ or p‐type even during run‐time. Targeting the enhancement of fabrication reproducibility and electrical balancing between operation modes, here a nanoscale Al‐Si‐Al nanowire heterostructure with single elementary, monocrystalline Al leads and sharp Schottky junctions is implemented. Utilizing a three top‐gate architecture, reconfiguration on transistor level is enabled. Having devised symmetric on‐currents as well as threshold voltages for n‐ and p‐type operation as a necessary requirement to exploit complementary reconfigurable circuits, selected implementations of logic gates such as inverters and combinational wired‐AND gates are reported. In this respect, exploiting the advantages of the proposed multi‐gate transistor architecture and offering additional logical inputs, the device functionality can be expanded by transforming a single transistor into a logic gate. Importantly, the demonstrated Al‐Si material system and thereof shown logic gates show high compatibility with state‐of‐the‐art complementary metal‐oxide semiconductor technology. Additionally, exploiting reconfiguration at the device level, this platform may pave the way for future adaptive computing systems with low‐power consumption and reduced footprint, enabling novel circuit paradigms. [ABSTRACT FROM AUTHOR]

Published
2023
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23. List of contributors

Author

Arbiol, J., primary, Bescond, M., additional, Calarco, R., additional, Chen, W., additional, Chèze, C., additional, Dai, X., additional, Dayeh, S.A., additional, den Hertog, Martien Ilse, additional, Dick, K.A., additional, Dogan, P., additional, Erhard, N., additional, Grandidier, B., additional, Holleitner, A., additional, Li, Luying, additional, Liu, B., additional, Mai, L.Q., additional, Miao, J., additional, Murray, G., additional, Olivier, A., additional, Pan, A., additional, Pareige, P., additional, Paul, M., additional, Peng, Lele, additional, Phillips, M.R., additional, Shi, Ye, additional, Soci, C., additional, Thony, P., additional, Tian, B., additional, Ton-That, C., additional, Tong, L., additional, Utama, M.I.B., additional, Wang, Qu-Quan, additional, Wilhelm, C., additional, Xin, C., additional, Xiong, Q.H., additional, Xu, T., additional, Yu, H., additional, Yu, Guihua, additional, Zhang, Anqi, additional, Zhang, Q., additional, Zheng, Gengfeng, additional, Zhou, Li, additional, and Zhu, X., additional

Published
2015
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35. Stimulated Raman Scattering in Ge Nanowires

Author

Sistani, Masiar, primary, Bartmann, Maximilian G., additional, Güsken, Nicholas A., additional, Oulton, Rupert F., additional, Keshmiri, Hamid, additional, Luong, Minh Anh, additional, Robin, Eric, additional, den Hertog, Martien I., additional, and Lugstein, Alois, additional

Published
2020
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37. Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires

Author

Sistani, Masiar, primary, Delaforce, Jovian, additional, Kramer, Roman B. G., additional, Roch, Nicolas, additional, Luong, Minh Anh, additional, den Hertog, Martien I., additional, Robin, Eric, additional, Smoliner, Jürgen, additional, Yao, Jun, additional, Lieber, Charles M., additional, Naud, Cecile, additional, Lugstein, Alois, additional, and Buisson, Olivier, additional

Published
2019
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41. Soluble Two-Dimensional Covalent Organometallic Polymers by(Arene)Ruthenium-Sulfur Chemistry

Author

Coraux, Johann, Hourani, Wael, Muller, Valentin, Bendiab, Nedjma, Den Hertog, Martien, Salut, Roland, Cherioux, Frédéric, Systèmes hybrides de basse dimensionnalité (HYBRID), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) (FEMTO-ST), Université de Technologie de Belfort-Montbeliard (UTBM)-Ecole Nationale Supérieure de Mécanique et des Microtechniques (ENSMM)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Centre National de la Recherche Scientifique (CNRS), and Matériaux, Rayonnements, Structure (MRS)

Subjects
[CHIM.COOR]Chemical Sciences/Coordination chemistry
Abstract

International audience; Conjugated two-dimensional (2D) materials are ultimately thin species, in which the hoping of charge carriers between neighboring atomic sites governs conduction. Graphene, which may be regarded as a giant conjugated molecule, is a typical example. Rich electronic, magnetic, and optical properties are expected in 2D materials with more complex structure and composition than graphene

Published
2017

42. Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers

Author

Ajay, Akhil, Lim, Caroline B., Browne, David A., Polaczyński, Jakub, Bellet-Amalric, Edith, den Hertog, Martien I., Monroy, Eva, Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Matériaux, Rayonnements, Structure (NEEL - MRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), European Project: 278428,EC:FP7:ERC,ERC-2011-StG_20101014,TERAGAN(2012), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), MRS - Matériaux, Rayonnements, Structure, Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), ANR-11-LABX-0014/11-LABX-0014,GANEX,Réseau national sur GaN(2011), and Matériaux, Rayonnements, Structure (MRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017
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43. Design of AlGaN/AlN Dot‐in‐a‐Wire Heterostructures for Electron‐Pumped UV Emitters.

Author

Dimkou, Ioanna, Harikumar, Anjali, Ajay, Akhil, Donatini, Fabrice, Bellet-Amalric, Edith, Grenier, Adeline, den Hertog, Martien I., Purcell, Stephen T., and Monroy, Eva

Subjects
MOLECULAR beam epitaxy, QUANTUM dots, HETEROSTRUCTURES, QUANTUM efficiency, SPECTRAL sensitivity, NANOWIRE devices, QUANTUM dot synthesis
Abstract

This article describes the fabrication of nitrogen‐polar AlxGa1−xN/AlN (x = 0, 0.1) quantum dot (QD) superlattices (SLs) integrated along GaN nanowires (NWs) for application in electron‐pumped UV sources. The NWs are grown using plasma‐assisted molecular beam epitaxy on n‐type Si(111) wafers using a low‐temperature AlN nucleation layer. Growth conditions are tuned to obtain a high density of noncoalesced NWs. To improve the uniformity of the height along the substrate, the growth begins with a long (≈900 nm) NW base, with a diameter of 30–50 nm. The AlxGa1−xN/AlN active region is 400 nm long (88 periods of QDs), long enough to collect the electron–hole pairs generated by an electron beam with an acceleration voltage ≤5 kV. The spectral response is tuned in the 340–258 nm range by varying the dot/barrier thickness ratio and the Al content in the dots. Internal quantum efficiencies as high as 63% are demonstrated. [ABSTRACT FROM AUTHOR]

Published
2020
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46. Critical condition for growth of silicon nanowires.

Author

Dhalluin, Florian, Desré, Pierre J., den Hertog, Martien I., Rouvière, Jean-Luc, Ferret, Pierre, Gentile, Pascal, and Baron, Thierry

Subjects
NANOWIRES, SILICON research, THERMODYNAMICS research, NANOTECHNOLOGY, SEMICONDUCTORS, LIQUID alloys
Abstract

The existence of a critical radius on the growth of Si nanowires by the vapor-liquid-solid mechanism is examined. By varying the experimental growth parameters, we have shown a dependence of the minimum nanowires radius with the Si reactive species partial pressure, demonstrating that the critical radius is not a limited one. A thermodynamical model giving a quantitative aspect of the dependence of a critical nanowire diameter on Si supersaturation in a Au-Si droplet is proposed. These results open up a way to grow many kinds of nanowires with nanometric diameter. The size control has important implications for electronic and optical properties of nanowires based devices. [ABSTRACT FROM AUTHOR]

Published
2007
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50. Soluble Two‐Dimensional Covalent Organometallic Polymers by (Arene)Ruthenium‐Sulfur Chemistry

Author

Coraux, Johann, primary, Hourani, Wael, additional, Müller, Valentin L., additional, Lamare, Simon, additional, Kamaruddin, Danial Aiman, additional, Magaud, Laurence, additional, Bendiab, Nedjma, additional, Den Hertog, Martien, additional, Leynaud, Olivier, additional, Palmino, Frank, additional, Salut, Roland, additional, and Chérioux, Frédéric, additional

Published
2017
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