389 results on '"Delage S"'
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2. In-situ NMR Measurements of Vapor Deposited Ice
3. Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing
4. L'impact de la crise sanitaire sur le recours au SAMU
5. An hybrid linking approach for solving the conservation equations with an Adaptive Mesh Refinement method
6. Caractéristiques socioéconomiques des individus aux formes sévères de COVID-19 au fil des vagues épidémiques.
7. HEMT Average Temperature Determination Utilizing Low-Power Device Operation
8. Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al 2O 3 gate insulation and passivation
9. Diamond overgrown InAlN/GaN HEMT
10. Bilan initial du suivi des patients par SMS en chirurgie bariatrique. Expérimentation en région limousin
11. GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
12. Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor
13. DLTS Study of Emission and Capture Processes in InAlGaN/GaN HEMT Structures for 5G
14. Quasi-static I-V characterization utilized for isothermal and thermal parameters comparison in InAlN/GaN or AlGaN/GaN HEMTs
15. LP-MOCVD growth of GaAlN/GaN heterostructures on Silicon Carbide. Application to HEMT’s devices.
16. InAlN/GaN MOS-HEMT WITH THERMALLY GROWN OXIDE
17. Electron Microscopy on GaAs Based Devices
18. AlGaN/GaN HEMT channel temperature determination utilizing external heater
19. Oncogene-induced up-regulation of Caco-2 cell proliferation involves IGF-II gene activation through a Protein kinase C-mediated pathway
20. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
21. Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT
22. DLTFS Study of Defect Distribution in InAlGaN/GaN/SiC HEMT Heterostructures
23. Application of Quasi-Static I-V Characterization for Channel Temperature Determination in InAIN/GaN HEMT
24. Electrically Active Defects in 10 kV SiC PIN Diode Structures with Natural and Isotope Pure Layers
25. Defect Distribution Study of AIGaN/GaN HEMT Structures for High Power Applications
26. A Three-Layer Resist Process for T - and Γ-Gates in High Electron Mobility Transistor Fabrication
27. A Three-Layer Resist Process for T - and T -Gates in High Electron Mobility Transistor Fabrication
28. First results on Ka band MMIC power amplifiers based on InAlGaN/GaN HEMT technology
29. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources.
30. Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films.
31. Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer.
32. On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors
33. Secteur Kergouet, Neuillac, Morbihan, Rapport de diagnostic
34. Investigation of AlGaN/GaN Schottky structures by deep level fourier transient spectroscopy with optical excitation
35. In Situ NMR Measurements of Vapor Deposited Ice
36. Self-biasing effects induced by RF step-stress in Ka-band LNAs based on InAlN/GaN HEMT technology
37. InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz
38. Self-biasing effects induced by RF step-stress in Ka-band LNAs based on InAlN/GaN HEMT technology
39. Electron irradiation effect on antimony doping of silicon <111> grown by molecular-beam epitaxy.
40. Defects in epitaxial Si-doped GaInP.
41. ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT
42. Stability of solid phases in the Dexamethasone Acetate / water system
43. Conference Report: 48th Workshop On Compound Semiconductor Materials And Devices (Wocsemmad 2012)
44. DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects
45. Conference Report: 47th Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2011)
46. Ka-band low noise amplifiers based on InAlN/GaN technologies
47. InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances
48. AlGaN/GaN HEMT’s photoresponse to high intensity THz radiation
49. Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures
50. Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance
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