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Ultrathin Al2O3 films (1.3 nm or 2.5 nm) were deposited by plasma enhanced atomic layer deposition (PEALD) onto the low k (k = 2.5) material. By ALD deposition of an ultrathin Al2O3 film onto the low k surface, the thermal stability and electrical performance for the Cu/Ta/Al2O3/low k/Si system were significantly improved in comparison to those with even thicker Ta and ALD Ru/TaN layers as diffusion barrier. The effective k value of the system was not degraded by adding the ultrathin Al2O3 layer.

Ultrathin Al2O3films (1.3 nm or 2.5 nm) were deposited by plasma enhanced atomic layer deposition (PEALD) onto the low k(k= 2.5) material. By ALD deposition of an ultrathin Al2O3film onto the low ksurface, the thermal stability and electrical performance for the Cu/Ta/Al2O3/low k/Si system were significantly improved in comparison to those with even thicker Ta and ALD Ru/TaN layers as diffusion barrier. The effective kvalue of the system was not degraded by adding the ultrathin Al2O3layer.