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Improved Thermal Stability and Electrical Performance by Using PEALD Ultrathin Al2O3Film with Ta as Cu Diffusion Barrier on Low kDielectrics
- Source :
- ECS Solid State Letters; January 2012, Vol. 1 Issue: 3
- Publication Year :
- 2012
-
Abstract
- Ultrathin Al2O3films (1.3 nm or 2.5 nm) were deposited by plasma enhanced atomic layer deposition (PEALD) onto the low k(k= 2.5) material. By ALD deposition of an ultrathin Al2O3film onto the low ksurface, the thermal stability and electrical performance for the Cu/Ta/Al2O3/low k/Si system were significantly improved in comparison to those with even thicker Ta and ALD Ru/TaN layers as diffusion barrier. The effective kvalue of the system was not degraded by adding the ultrathin Al2O3layer.
Details
- Language :
- English
- ISSN :
- 21628742 and 21628750
- Volume :
- 1
- Issue :
- 3
- Database :
- Supplemental Index
- Journal :
- ECS Solid State Letters
- Publication Type :
- Periodical
- Accession number :
- ejs61798654
- Full Text :
- https://doi.org/10.1149/2.006203ssl