299 results on '"De Simone, Danilo"'
Search Results
2. Patterning optimization for single mask bit-line-periphery and storage-node-landing-pad DRAM layers using 0.33NA EUV lithography at the resolution limit
3. Functional underlayers, surface priming, and multilayer stacks to improve dose and adhesion of EUV photoresists
4. Holistic litho-etch approach towards high NA EUV challenges
5. Update on main chain scission resists in Zeon for high-NA EUV lithography
6. Functional underlayers for dose reduction and collapse mitigation in EUV lithography: a factorial analysis
7. Improvements in the measurement of local critical dimension uniformity for holes and pillars
8. Extreme Ultraviolet Lithographic Performance and Reaction Mechanism of Polymeric ResistUtilizing Radical- and Acid-Amplified Cross-Linking.
9. Mask absorber, mask tone, and wafer process impact on resist line-edge-roughness
10. Reaction mechanisms of Sn-complex-side-chain polymer used for extreme ultraviolet lithography, studied by electron pulse radiolysis and γ-radiolysis
11. Scaled-down deposited underlayers for EUV lithography
12. Development on main chain scission resists for high-NA EUV lithography
13. Recent advances in EUV patterning in preparation towards high-NA EUV
14. Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions
15. Patterning optimization for single mask bit-line-periphery and storage-node-landing-pad DRAM layers using 0.33NA EUV lithography at the resolution limit
16. Main chain scission resists towards high-NA EUV lithography
17. Frequency-informed deep-learning denoising method supporting sub-nm metrology for high NA EUV lithography
18. Mask absorber/tone and process impact on resist line-edge-roughness
19. Dry resist metrology readiness for high-NA EUVL
20. e-beam metrology of thin resist for high NA EUVL
21. Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition
22. Update on main chain scission resists in Zeon for high-NA EUV lithography
23. Improvements in the measurement of local critical dimension uniformity for holes and pillars
24. Functional underlayers for dose reduction and collapse mitigation in EUV lithography: a factorial analysis
25. Probabilistic process window: a new approach to focus-exposure analysis
26. Unbiased roughness measurements from low signal-to-noise ratio scanning electron microscope images
27. Role of landing energy in e-beam metrology of thin photoresist for high-numerical aperture extreme ultraviolet lithography
28. Resist reflow methodology development to investigate interfacial interactions
29. Extraction of roughness measurements from thin resists with low signal-to-noise-ratio (SNR) SEM images by applying deep learning denoiser
30. Influence of photoresist thinning and underlayer film on e-beam using eP5 for high-NA patterning
31. Scaling and readiness of underlayers for high-NA EUV lithography
32. Scaling and readiness of underlayers for high-numerical aperture extreme ultraviolet lithography
33. Holistic litho-etch development to address patterning challenges towards high NA EUV
34. Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition
35. High-NA EUV photoresist metrology using high-throughput scanning probe microscopy
36. Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20–450 eV.
37. High throughput scanning probe metrology for high-NA EUV photoresist profiling
38. Metrology of thin resist for high NA EUVL
39. Adhesion and collapse of extreme ultraviolet photoresists and the role of underlayers
40. A lithographic and etching study on EUV contact hole patterning for stochastic process mitigation towards advanced device scaling
41. Adhesion and collapse of EUV photoresists and the role of underlayers
42. Low-voltage aberration-corrected SEM metrology of thin resist for high-NA EUVL
43. Unbiased roughness measurements from low signal-to-noise ratio SEM images
44. Probabilistic process window: a new approach to focus-exposure analysis
45. To bake or not to bake... : the impact of prebake in the EUV resist process
46. Improving polymethacrylate EUV resists with TiO2 area-selective deposition
47. Resist line edge roughness mitigation at high-NA EUVL
48. Improve resolution with main chain scission resists for EUV lithography
49. EUV based multi-patterning schemes for advanced DRAM nodes
50. Approaches to enable patterning of tight pitches towards high NA EUV
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