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2. Contributors

11. Carbon-doped GeTe: A promising material for Phase-Change Memories

21. Contributor contact details

32. Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories

41. Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers

43. Charge transport in thin interpoly nitride/oxide stacked films.

45. Investigation of HfO2/Ti based vertical RRAM - Performances and variability

47. Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

48. (Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI

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