442 results on '"De Salvo B"'
Search Results
2. Contributors
3. Emerging memory technologies for neuromorphic hardware
4. Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory
5. A technological and electrical study of self-aligned charge-trap split-gate memory devices
6. Material engineering of GexTe100−x compounds to improve phase-change memory performances
7. Redox behavior of a ferrocene monolayer on SiO2 obtained after click-coupling
8. On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories
9. Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory
10. High temperature reliability of μtrench Phase-Change Memory devices
11. Carbon-doped GeTe: A promising material for Phase-Change Memories
12. Accurate analysis of parasitic current overshoot during forming operation in RRAMs
13. Defects-induced gap states in hydrogenated γ-alumina used as blocking layer for non-volatile memories
14. Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells
15. Investigation of charge-trap memories with AlN based band engineered storage layers
16. Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs
17. Reliability of charge trapping memories with high- k control dielectrics (Invited Paper)
18. Impact of a HTO/Al 2O 3 bi-layer blocking oxide in nitride-trap non-volatile memories
19. Integration of CVD silicon nanocrystals in a 32 Mb NOR flash memory
20. Evaluation of HfAlO high- k materials for control dielectric applications in non-volatile memories
21. Contributor contact details
22. Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures
23. Improved size dispersion of silicon nanocrystals grown in a batch LPCVD reactor
24. Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
25. 15 - Emerging memory technologies for neuromorphic hardware
26. Multi-bit storage through Si nanocrystals embedded in SiO 2
27. Silicon nanocrystal memories
28. CVD Growth and Passivation of W and TiN Nanocrystals for Non-Volatile Memory Applications
29. Single electron charging and discharging phenomena at room temperature in a silicon nanocrystal memory
30. Electrical characterization of fast transient phenomena in a Si-rich based non-volatile random access memory
31. (Invited) Future Challenges and Diversifications for Nanoelectronics by the End of the Roadmap and Beyond
32. Effects of partial self-ordering of Si dots formed by chemical vapor deposition on the threshold voltage window distribution of Si nanocrystal memories
33. Electrical characterization and modeling of MOS structures with an ultra-thin oxide
34. Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures
35. Investigation of charging/discharging phenomena in nano-crystal memories
36. A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
37. Study of stress induced leakage current by using high resolution measurements
38. On the correlation between SILC and hole fluence throughout the oxide
39. ONO and NO interpoly dielectric conduction mechanisms
40. Investigation of low field and high temperature SiO 2 and ONO leakage currents using the floating gate technique
41. Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers
42. Guidance to reliability improvement in CBRAM using advanced KMC modelling
43. Charge transport in thin interpoly nitride/oxide stacked films.
44. 4 - Improving embedded Flash memory technology: silicon and metal nanocrystals, engineered charge-trapping layers and split-gate memory architectures
45. Investigation of HfO2/Ti based vertical RRAM - Performances and variability
46. Experimental and Simulation Study of the Effects of Heavy-ion Irradiation on HfO2-based RRAM Cells
47. Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
48. (Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI
49. Heavy-ion upset immunity of RRAM cells based on thin HfO2 layers
50. (Invited) Non-Volatile Resistive Memory: Technology Capable of Revolutionary Compromises
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.