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1. Observation of long-range carrier diffusion in InGaN quantum wells, and implications from fundamentals to devices

2. Many-body effects in strongly-disordered III-nitride quantum wells: interplay between carrier localization and Coulomb interaction

3. Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap

4. Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells

5. Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

12. Investigation of extracting photonic crystal lattices for guided modes of GaAs-based heterostructures

17. High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%.

25. A Vector Field Color Rendition Model for Characterizing Color Shifts and Metameric Mismatch.

41. Why Color Space Uniformity and Sample Set Spectral Uniformity Are Essential for Color Rendering Measures.

47. Recent results and latest views on microcavity LEDs

49. Color Fidelity of Light Sources Evaluated over Large Sets of Reflectance Samples.

50. 56.2: Invited Paper: Progress in Color Rendition Measures for Lighting.

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