90 results on '"David, Aurelien"'
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2. Many-body effects in strongly-disordered III-nitride quantum wells: interplay between carrier localization and Coulomb interaction
3. Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap
4. Field-assisted Shockley-Read-Hall recombinations in III-Nitride quantum wells
5. Electrical properties of III-Nitride LEDs: recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
6. LED-based white light
7. Excitons in a disordered medium: A numerical study in InGaN quantum wells
8. High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%
9. Micro-LEDs: from device physics to novel displays
10. Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices
11. LED physics and implications for novel displays: the role of long-range carrier diffusion
12. Investigation of extracting photonic crystal lattices for guided modes of GaAs-based heterostructures
13. Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)
14. Review—The Physics of Recombinations in III-Nitride Emitters
15. Thermal droop in high-quality InGaN LEDs
16. Compensation between radiative and Auger recombinations in III-nitrides: The scaling law of separated-wavefunction recombinations
17. High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2%.
18. U.S. Department of Energy, National Energy Technology Laboratory Solid-State Lighting Core Technologies Light Emitting Diodes on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100 0C
19. Many-Body Effects in Strongly Disordered III-Nitride Quantum Wells: Interplay Between Carrier Localization and Coulomb Interaction
20. Human perception of light chromaticity: short-wavelength effects in spectra with low circadian stimulation, and broader implications for general LED sources
21. Methods for Assessing Quantity and Quality of Illumination
22. Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap
23. A Vector Field Color Rendition Model for Characterizing Color Shifts and Metameric Mismatch
24. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates
25. A Vector Field Color Rendition Model for Characterizing Color Shifts and Metameric Mismatch.
26. Review--The Physics of Recombinations in III-Nitride Emitters.
27. Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells
28. All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation
29. Erratum: “Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures” [Appl. Phys. Lett. 109, 033504 (2016)]
30. Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling
31. Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures
32. Foreword
33. Why Color Space Uniformity and Sample Set Spectral Uniformity Are Essential for Color Rendering Measures
34. Development of the IES method for evaluating the color rendition of light sources
35. 56.2:Invited Paper: Progress in Color Rendition Measures for Lighting
36. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
37. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes
38. Color Fidelity of Light Sources Evaluated over Large Sets of Reflectance Samples
39. Whiteness metric for light sources of arbitrary color temperatures: proposal and application to light-emitting-diodes
40. Surface-Roughened Light-Emitting Diodes: An Accurate Model
41. Why Color Space Uniformity and Sample Set Spectral Uniformity Are Essential for Color Rendering Measures.
42. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
43. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
44. Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications
45. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
46. Spontaneous emission in GaN/InGaN photonic crystal nanopillars
47. Recent results and latest views on microcavity LEDs
48. Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
49. Color Fidelity of Light Sources Evaluated over Large Sets of Reflectance Samples.
50. 56.2: Invited Paper: Progress in Color Rendition Measures for Lighting.
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