Back to Search
Start Over
Quantum efficiency of III-Nitride emitters: evidence for defect-assisted non-radiative recombination and its effect on the green gap
- Source :
- Phys. Rev. Applied 11, 031001 (2019)
- Publication Year :
- 2018
-
Abstract
- Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two contributions which scale with the cube of the carrier density: an intrinsic recombination --most likely standard Auger scattering-- and an extrinsic recombination which is proportional to the density of point defects. This second droop mechanism, which hasn't previously been observed, is likely caused by an impurity-assisted Auger process. Further, it is shown that longer-wavelength emitters suffer from higher point defect recombinations, in turn causing an increase in the extrinsic droop process. It is proposed that this effect leads to the green gap, and that point defect reduction is a strategy to both vanquish the green gap and more generally improve quantum efficiency at high current.<br />Comment: Second version: minor edits and figure updates, to match version published in Phys. Rev. Applied
- Subjects :
- Physics - Applied Physics
Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Applied 11, 031001 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1811.08527
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevApplied.11.031001