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Hydrogen lithography has been used to template phosphine-based surface chemistry to fabricate atomic-scale devices, a process we abbreviate as atomic precision advanced manufacturing (APAM). Here, we use mid-infrared variable angle spectroscopic ellipsometry (IR-VASE) to characterize single-nanometer thickness phosphorus dopant layers (δ-layers) in silicon made using APAM compatible processes. A large Drude response is directly attributable to the δ-layer and can be used for nondestructive monitoring of the condition of the APAM layer when integrating additional processing steps. The carrier density and mobility extracted from our room temperature IR-VASE measurements are consistent with cryogenic magneto-transport measurements, showing that APAM δ-layers function at room temperature. Finally, the permittivity extracted from these measurements shows that the doping in the APAM δ-layers is so large that their low-frequency in-plane response is reminiscent of a silicide. However, there is no indication of a plasma resonance, likely due to reduced dimensionality and/or low scattering lifetime.

Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a $\mathrm{Si}$ lattice within approximately $1$ nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer single-donor window is $63\ifmmode\pm\else\textpm\fi{}10\mathrm{%}$ for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.

As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS., In IEEE Trans. Dev. Mater. Rel. (2022). Copyright 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, collecting new collected works for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. Here, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/f

Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a novel singlet-triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a $1/f^{\alpha}$ dependence consistent with $\alpha \sim 0.7$, over 9 orders of magnitude in noise frequency., Comment: Supplementary information included with the paper

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 {\mu}W whereas the power of the AC-HBT ranges from 1 to 20 {\mu}W. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 {\mu}e/$\sqrt{\textrm{Hz}}$ and 400 {\mu}e/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 {\mu}s is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction., Comment: 11 pages, 13 figures

Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($\Gamma_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/\Gamma_{\mathrm{Rabi}}$, exceeding $1~\mathrm{\mu s}$. We find that the slowest $\Gamma_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself., Comment: 10 pages, 6 figures. Supplementary material is included as appendices

Exponential increases in semiconductor device density have been accompanied by exponential increases in tooling costs for successive generations. Atomically precise devices (APDs) present a comparatively cheap opportunity to assess future device technologies without the investment required to reach manufacturing scales. However, APDs are not easily integrated into standard workflows and require re-development of common device elements to be compatible with the atomically precise components. APDs prepared in a scanning tunneling microscope (STM) via H desorption lithography [1], [2] produce atomically abrupt dopant profiles, but require a bare silicon surface to start the process and restrict the post-processing thermal budget to $\sim 350^{\mathrm{o}}\mathrm{C}$ to prevent dopant diffusion. This prohibits including surface dielectrics in advance of dopant incorporation and permits only deposited oxides in post-processing. Here, we demonstrate for the first time a surface gate incorporating widely available atomic layer deposition (ALD) Al 2 O 3 oxide with APDs made using H lithography and P doping. Fig. 1 shows a schematic (a), an STM image (b) and an optical image (c) of a single electron transistor (SET) processed using previously described methods for P incorporation and Si cap growth at low temperature (LT) [3]. The ALD gate oxide was deposited at 250°C, followed by electron beam lithography to define the metal gate, and photolithography for contact vias and metal fan-out. The SET, though an unconventional device, provides a straightforward path to analyzing energy scales and electrostatics.

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures., v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation., Comment: 6+5 pages, 6 figures

Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices., Comment: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

Atomic precision advanced manufacturing (APAM) is a technique for placing dopant atoms with single atomic-lattice site precision on silicon surfaces. APAM devices are created by patterning the placement of dopants into a two-dimensional sheet of phosphorus atoms on the silicon surface, incorporating the dopants into the lattice, and then capping the device in silicon. The dopant atoms are incorporated into the silicon lattice through a surface-activated chemical reaction, as opposed to a thermally activated bulk process, which allows for electrically active doping above the solubility limit for phosphorus in silicon. The two-order of magnitude higher doping levels and two-dimensional nature of the dopant sheet enable new device physics and the potential for new device types with superior performance under specific tasks. Atomic precision fabrication requires atomically clean surfaces. Historically the APAM technique has required temperatures in excess of 1200 °C to prepare device surfaces, which has severely limited the ability to combine APAM with other manufacturing techniques such as CMOS. Recent work by our group and others has shown that the surface preparation process can be achieved at temperatures near 800 °C, greatly improving integration possibilities with CMOS [1,2]. Once fabricated, APAM devices have low thermal budgets to minimize vertical diffusion of the phosphorus dopants out of the non-equilibrium two-dimensional sheet. Temperatures on the order of 450 °C have been shown to be permissible for long periods of time. In this talk we report on the initial development of a CMOS process flow that incorporates APAM device fabrication. Based on the thermal budget and processing constraints, our basic process flow involves building the APAM device between CMOS Front-end-of-line (FEOL) and the CMOS Back-end-of-line (BEOL) steps. This is a natural insertion point based upon both thermal budget limitations and the need to directly access the device silicon to build the APAM device. Borrowing from CMOS nomenclature, we introduce the concept of “APAM select” and “APAM active” to indicate where the window for APAM device patterning will be opened and the actual APAM device area, respectively. These are the only additional mask layers needed to introduce APAM into a CMOS layout cell. An APAM cell was created that has the appropriate source/drain placement and targeting reticle in poly-Si to enable alignment of the APAM lithography tool to the wafer. Two classes of challenges exist in developing a CMOS-APAM process flow. The first is related to the APAM process itself and limitations of current fabrication tools. The APAM surface preparation, patterning, dopant incorporation, and silicon capping all occur in a scanning tunneling microscope (STM). Devices must be processed at the die level to fit into the STM sample holders. Die level processing puts restrictions on the BEOL processing including minimum feature size and available processes, such as a lack of chemical-mechanical polish (CMP) to planarize metal layers. The second class of challenges is related to the impacts of the APAM process, such as surface preparation, on CMOS devices, which has not been previously explored. We discuss our strategy for integration with CMOS, by including test structures to mimic the APAM device, and sequential implementation and testing of the APAM fabrication steps with CMOS chips. We conclude with a discussion of future integration challenges such as wafer level processing of APAM devices in a CMOS foundry flow. Direct integration of APAM components into CMOS circuits opens the door for devices with enhanced functionality. ACKNOWLEDGMENT This work is supported by Sandia’s Lab Directed Research and Development Program, and was performed in part at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. References [1] T. Skeren, et al., “CMOS platform for atomic-scale device fabrication,” Nanotechnology, vol. 29, pp. 435302, 2018. [2] D. R. Ward, et al., “All-optical lithography process for contacting nanometer precision donor devices,” Appl. Phys. Lett., vol. 111, pp. 193101 (2017).

Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS., The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the Compressed Optimization of Device Architectures (CODA), in order to both efficiently identify sparse sets of voltage changes that control quantum systems, and to introduce a metric which can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes., Comment: 10 pages, 4 figures

The cortex is organized as a hierarchical processing structure. Feedback from higher levels of the hierarchy, known as top-down signals, have been shown to be involved in attentional and contextual modulation of sensory responses. Here we argue that top-down input to the primary visual cortex (V1) from A24b and the adjacent secondary motor cortex (M2) signals a prediction of visual flow based on motor output. A24b/M2 sends a dense and topographically organized projection to V1 that targets most neurons in layer 2/3. By imaging the activity of A24b/M2 axons in V1 of mice learning to navigate a 2D virtual environment, we found that their activity was strongly correlated with locomotion and resulting visual flow feedback in an experience-dependent manner. When mice were trained to navigate a left-right inverted virtual environment, correlations of neural activity with behavior reversed to match visual flow. These findings are consistent with a predictive coding interpretation of visual processing.

Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $\mu$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $\pi$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots., Comment: 9 pages, 8 figures including supplementary information

We describe an all-optical lithography process that can make electrical contact to nanometer-precision donor devices fabricated in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.

Apoptosis-associated tyrosine kinase (AATYK) is up-regulated by phosphorylation in cultured cerebellar granule neurons (CGN) undergoing apoptosis upon switch to low KCl-containing medium. However, the underlying signaling pathways remain to be fully characterized. When CGN at culture day 7 were switched from 25 mM KCl (K25) to 5 mM (K5) medium, AATYK band migration on SDS-PAGE shifted to a more slowly migrating position expected for the hyperphosphorylated protein. The apoptosis-inducing agent C(2)-ceramide also caused a mobility shift of the AATYK protein. Exposing CGN (K25) to L-type voltage-dependent Ca(2+) channel antagonists shifted the AATYK band to the K5-induced position, while the Ca(2+) channel activator FPL-64176 had the contrary effect. FK-506, a calcineurin inhibitor caused AATYK hyperphosphorylation under high KCl conditions. CGN death in K5 medium is linked to inhibition of the PI 3-kinase/Akt survival pathway and concomitant activation of the pro-apoptotic downstream target glycogen synthase kinase-3 (GSK-3). GSK-3 inhibitors blocked the K5-induced mobility shift of AATYK. Moreover, CGN cultured from AATYK-deficient mice remained sensitive to death in K5 medium. Thus, AATYK activation may not be a physiologically relevant principal regulatory target of the GSK-3 death pathway in KCl-deprived CGN.

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field., 9 pages, 4 figures

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices., Comment: 5 pages, 3 figures

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction., 9 pages and 6 figures including supplementary information

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis states are the singlet state and the spin-zero triplet state of two electrons. Because of the micro magnet, the magnetic field difference $\Delta B$ between the two sides of the double dot is large enough to enable the achievement of coherent rotation of the qubit's Bloch vector about two different axes of the Bloch sphere. By measuring the decay of the quantum oscillations, the inhomogeneous spin coherence time $T_{2}^{*}$ is determined. By measuring $T_{2}^{*}$ at many different values of the exchange coupling $J$ and at two different values of $\Delta B$, we provide evidence that the micromagnet does not limit decoherence, with the dominant limits on $T_{2}^{*}$ arising from charge noise and from coupling to nuclear spins., Comment: 10 pages, 9 figures

Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to characterize three nominally identical quantum-point contact channels, enabling comparison of their threshold voltages for accumulation and their pinch-off voltages during a single cool-down of a dilution refrigerator.

We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and photocurrents allows us to infer the optical frequency potential difference produced by the plasmon response of the junction. Together with the measured tunneling conductance, we can then determine the locally enhanced electric field within the junction. In similar structures containing molecules, anti-Stokes and Stokes Raman emission allow us to infer the effective local vibrational and electronic temperatures as a function of DC current, examining heating and dissipation on the nanometer scale., 13 pages, 5 figures, proceedings paper for SPIE Optics+Photonics 2011

4 páginas y 3 figuras, Motivated by recent experiments [D. R. Ward et al., Nat. Nanotechnol. 5, 732 (2010)], we present here a theoretical analysis of the optical response of sharp gold electrodes separated by a subnanometer gap. In particular, we have used classical finite difference time domain simulations to investigate the electric-field distribution in these nanojunctions upon illumination. Our results show a strong confinement of the field within the gap region, resulting in a large enhancement compared to the incident field. Enhancement factors exceeding 103 are found for interelectrode distances on the order of a few angstrom, which are fully compatible with the experimental findings. Such huge enhancements originate from the coupling of the incident light to the evanescent field of hybrid plasmons involving charge density oscillations in both electrodes., A. G. M. acknowledges financial support from the EU (Grant No. NMP3-SL-2008-214107-Nanomagma) and the Spanish MICINN (“MAGPLAS” Grant No.MAT2008-06765-C02-01/NAN and “FUNCOAT” CONSOLIDER INGENIO Grant No. 2010 CSD2008-00023). J. C. C. acknowledges support from the EU through the BIMORE network (Grant No. MRTN-CT-2006-035859) and the Spanish MICINN (Grant No. FIS2008- 04209). D. N. and D. R. W. acknowledge support from the Robert A. Welch Foundation (Grant No. C-1636) and the Lockheed Martin Advanced Nanotechnology Center of Excellence at Rice University (LANCER).

Metal nanostructures act as powerful optical antennas[1, 2] because collective modes of the electron fluid in the metal are excited when light strikes the surface of the nanostructure. These excitations, known as plasmons, can have evanescent electromagnetic fields that are orders of magnitude larger than the incident electromagnetic field. The largest field enhancements often occur in nanogaps between plasmonically active nanostructures[3, 4], but it is extremely challenging to measure the fields in such gaps directly. These enhanced fields have applications in surface-enhanced spectroscopies[5-7], nonlinear optics[1, 8-10], and nanophotonics[11-15]. Here we show that nonlinear tunnelling conduction between gold electrodes separated by a subnanometre gap leads to optical rectification, producing a DC photocurrent when the gap is illuminated. Comparing this photocurrent with low frequency conduction measurements, we determine the optical frequency voltage across the tunnelling region of the nanogap, and also the enhancement of the electric field in the tunnelling region, as a function of gap size. The measured field enhancements exceed 1000, consistent with estimates from surface-enhanced Raman measurements[16-18]. Our results highlight the need for more realistic theoretical approaches that are able to model the electromagnetic response of metal nanostructures on scales ranging from the free space wavelength, $\lambda$, down to $\sim \lambda/1000$, and for experiments with new materials, different wavelengths, and different incident polarizations., Comment: 15 pages, 5 figures + 12 pages, 5 figures of supplemental information

Understanding and controlling the flow of heat is a major challenge in nanoelectronics. When a junction is driven out of equilibrium by light or the flow of electric charge, the vibrational and electronic degrees of freedom are, in general, no longer described by a single temperature[1-6]. Moreover, characterizing the steady-state vibrational and electronic distributions {\it in situ} is extremely challenging. Here we show that surface-enhanced Raman emission may be used to determine the effective temperatures for both the vibrational modes and the flowing electrons in a biased metallic nanoscale junction decorated with molecules[7]. Molecular vibrations show mode-specific pumping by both optical excitation[8] and dc current[9], with effective temperatures exceeding several hundred Kelvin. AntiStokes electronic Raman emission\cite[10,11] indicates electronic effective temperature also increases to as much as three times its no-current values at bias voltages of a few hundred mV. While the precise effective temperatures are model-dependent, the trends as a function of bias conditions are robust, and allow direct comparisons with theories of nanoscale heating., Comment: 28 pages, including 4 main figures and 10 supplemental figures

Using thermal emission microscopy, we investigate heating in Pt nanowires before and during electromigration. The wires are observed to reach temperatures in excess of 1000 K. This is beyond the thermal decomposition threshold for many organic molecules of interest for single molecule measurements with electromigrated nanogaps. Blackbody spectra of the hot Pt wires are measured and found to agree well with finite element modeling simulations of the electrical and thermal transport., 4 pages, 3 figures

Electromigrated nanoscale junctions have proven very useful for studying electronic transport at the single-molecule scale. However, confirming that conduction is through precisely the molecule of interest and not some contaminant or metal nanoparticle has remained a persistent challenge, typically requiring a statistical analysis of many devices. We review how transport mechanisms in both purely electronic and optical measurements can be used to infer information about the nanoscale junction configuration. The electronic response to optical excitation is particularly revealing. We briefly discuss surface-enhanced Raman spectroscopy on such junctions, and present new results showing that currents due to optical rectification can provide a means of estimating the local electric field at the junction due to illumination., 19 pages, 8 figures, invited paper for forthcoming special issue of Journal of Physics: Condensed Matter. For other related papers, see http://www.ruf.rice.edu/~natelson/publications.html

Electronic conduction through single molecules is affected by the molecular electronic structure as well as by other information that is extremely difficult to assess, such as bonding geometry and chemical environment. The lack of an independent diagnostic technique has long hampered single-molecule conductance studies. We report simultaneous measurement of the conductance and the Raman spectra of nanoscale junctions used for single-molecule electronic experiments. Blinking and spectral diffusion in the Raman response of both para-mercaptoaniline and a fluorinated oligophenylyne ethynylene correlate in time with changes in the electronic conductance. Finite difference time domain calculations confirm that these correlations do not result from the conductance modifying the Raman enhancement. Therefore, these observations strongly imply that multimodal sensing of individual molecules is possible in these mass-producible nanostructures., 16 pages, 5 figures + supporting material of 15 pages, 10 figures

Single-molecule detection with chemical specificity is a powerful and much desired tool for biology, chemistry, physics, and sensing technologies. Surface-enhanced spectroscopies enable single molecule studies, yet reliable substrates of adequate sensitivity are in short supply. We present a simple, scaleable substrate for surface-enhanced Raman spectroscopy (SERS) incorporating nanometer-scale electromigrated gaps between extended electrodes. Molecules in the nanogap active regions exhibit hallmarks of very high Raman sensitivity, including blinking and spectral diffusion. Electrodynamic simulations show plasmonic focusing, giving electromagnetic enhancements approaching those needed for single-molecule SERS., Comment: 29 pages, 11 figures (includes supp. material)

Background Secretion of gonadotropin-releasing hormone (GnRH) produced in neurons in the basal forebrain is the primary regulator of reproductive maturation and function in mammals. Peptidergic signals relating to circadian timing and energy balance are an important influence on the reproductive axis. The aim of this study was to investigate the innervation of GnRH neurons by peptidergic neurons. Methodology/Principal Findings Immunohistochemistry and confocal microscopy were used to detect appositions of peptidergic fibers (NPY, β-endorphin, MCH) associated with energy balance and metabolic status in transgenic mice expressing a green fluorescent protein reporter construct in GnRH neurons. The frequency of these appositions was compared to those of vasoactive intestinal peptide (VIP), a hypothalamic neuropeptide likely to convey circadian timing information to the GnRH secretory system. The majority of GnRH neurons (73–87%) were closely apposed by fibers expressing NPY, β-endorphin, or MCH, and a significant proportion of GnRH neurons (28%) also had close contacts with VIP-ir fibers. Conclusions/Significance It is concluded that GnRH neurons in the mouse receive a high frequency of direct modulatory inputs from multiple hypothalamic peptide systems known to be important in conveying circadian information and signalling energy balance.