43 results on '"Damlencourt, J.F."'
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2. Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique
3. A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers
4. Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS
5. Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS
6. A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
7. Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
8. The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?
9. High quality Germanium-On-Insulator wafers with excellent hole mobility
10. Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
11. Investigation of SiO 2/HfO 2 gate stacks for application to non-volatile memory devices
12. Surface preparation and post thermal treatment effects on interface properties of thin Al 2O 3 films deposited by ALD
13. Ge-On-Insulator substrates formed by Ge condensation technique: fabrication, modeling and characterization
14. Growth of Si and Ge quantum dots on insulators by CVD
15. Growth of Si nano-crystals on alumina and integration in memory devices
16. Si quantum dots growth on Al2O3 dielectric; integration in memory devices
17. A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology
18. 1/f noise in strained SiGe on Insulator MOSFETs
19. New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology
20. European HELIOS project: Silicon photonic photodetector integration
21. SOI-GeOI hybrid substrates elaboration by Ge condensation: Process and electrical properties
22. 42 GHz waveguide germanium-on-silicon vertical PIN photodetector
23. High hole mobility GeOI pMOSFETs with high-k / metal gate on Ge condensation wafers
24. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
25. Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices
26. Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD
27. Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates.
28. Metal gate and high-k integration for advanced CMOS devices.
29. High performance 40 nm nMOSFETs with HfO2 gate dielectric and polysilicon damascene gate.
30. 75 nm damascene metal gate and high-k integration for advanced CMOS devices.
31. High quality fully relaxed In0.65Ga0.35As layers grown on InP using seed membranes.
32. Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser.
33. 75 nm damascene metal gate and high-k integration for advanced CMOS devices
34. High quality fully relaxed In/sub 0.65/Ga/sub 0.35/As layers grown on InP using seed membranes
35. High performance 40 nm nMOSFETs with HfO/sub 2/ gate dielectric and polysilicon damascene gate
36. Metal gate and high-k integration for advanced CMOS devices
37. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
38. Memory characteristics of Si quantum dot devices with SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunneling dielectrics
39. Fabrication of SiGe-On-Insulator by Improved Ge Condensation Technique
40. GeOI photonic crystal cavities probed by room-temperature photoluminescence.
41. Investigation of SiO2/HfO2 gate stacks for application to non-volatile memory devices
42. Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics
43. Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD
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