19 results on '"DUV lithography"'
Search Results
2. All-Glass 100 mm Diameter Visible Metalens for Imaging the Cosmos.
- Author
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Park JS, Lim SWD, Amirzhan A, Kang H, Karrfalt K, Kim D, Leger J, Urbas A, Ossiander M, Li Z, and Capasso F
- Abstract
Metasurfaces, optics made from subwavelength-scale nanostructures, have been limited to millimeter-sizes by the scaling challenge of producing vast numbers of precisely engineered elements over a large area. In this study, we demonstrate an all-glass 100 mm diameter metasurface lens (metalens) comprising 18.7 billion nanostructures that operates in the visible spectrum with a fast f -number ( f /1.5, NA = 0.32) using deep-ultraviolet (DUV) projection lithography. Our work overcomes the exposure area constraints of lithography tools and demonstrates that large metasurfaces are commercially feasible. Additionally, we investigate the impact of various fabrication errors on the imaging quality of the metalens, several of which are specific to such large area metasurfaces. We demonstrate direct astronomical imaging of the Sun, the Moon, and emission nebulae at visible wavelengths and validate the robustness of such metasurfaces under extreme environmental thermal swings for space applications.
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- 2024
- Full Text
- View/download PDF
3. DUV Lithography
- Author
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Bhushan, Bharat, editor
- Published
- 2016
- Full Text
- View/download PDF
4. Controllable Formation of Zinc Oxide Micro- and Nanostructures via DUV Direct Patterning.
- Author
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Yeh, Chun-Cheng, Liu, Hung-Chuan, Chuang, Ming-Yen, Denzer, Joseph, Berling, Dominique, Zan, Hsiao-Wen, and Soppera, Olivier
- Subjects
ZINC oxide synthesis ,NANOSTRUCTURED materials synthesis ,PHOTOLITHOGRAPHY ,SOL-gel processes ,MICROSTRUCTURE ,PHOTOCHEMISTRY ,METHACRYLATES ,FOURIER transform infrared spectroscopy - Abstract
Various kinds of zinc oxide (ZnO) nanostructures, such as ZnO nanowires, ZnO nanobelts, ZnO nanosheets, and ZnO nanorods are promising building blocks for nanoscale systems. However, to precisely control the size, shape, and to make a controlled assembly of synthesized ZnO nanostructures are major difficulties in the development of bottom-up devices. To overcome the challenge regarding reproducibility and positioning, a new method is proposed, deep ultra-violet (DUV) direct photo-patterning, to create ZnO micro- and nanostructures. A sol-gel formulation sensitive to DUV light and based on zinc methacrylate precursor is developed, and the photoreactions of zinc methacrylate under DUV light are carefully investigated by in situ spectroscopic ellipsometry, in situ FTIR, and XPS analysis. Then, the sol-gel solution is used as a negative tone resist in DUV lithography to evaluate its performance in producing high-resolution patterns. The results indicate that small patterns from micro- to nanoscale can be obtained in a simple and direct way. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
5. High-Efficiency, 80 mm Aperture Metalens Telescope.
- Author
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Zhang L, Chang S, Chen X, Ding Y, Rahman MT, Duan Y, Stephen M, and Ni X
- Abstract
Metalenses promise potential for a paradigm shift of conventional optical devices. However, the aperture sizes of metalenses are usually bound within hundreds of micrometers by the commonly used fabrication methods, limiting their usage on practical optical devices like telescopes. Here, for the first time, we demonstrate a high-efficiency, single-lens, refractive metalens telescope. We developed a mass production-friendly workflow for fabricating wafer-scale (80 mm aperture) metalenses using deep-ultraviolet (DUV) photolithography. Our metalens works in the near-infrared region with nearly diffraction-limited focal spot sizes and a high peak focusing efficiency of 80.84% at 1450 nm experimentally. Based on the metalens, we built a single-lens telescope and acquired images of the lunar surface, revealing its geographical structures. We believe our demonstration of the metalens telescope proves the exciting potential lying in the metasurfaces and could bring new possibilities for areas involving large optical systems, including geosciences, planetary observation, and astrophysical science.
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- 2023
- Full Text
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6. Limitations of optical lithography on non-planar surfaces.
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Zawadzka, Agnieszka and Paszkiewicz, Regina
- Subjects
- *
PHOTOLITHOGRAPHY , *PHENOMENOLOGICAL theory (Physics) , *ELECTRIC fields , *LITHOGRAPHY - Published
- 2022
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7. High-Efficiency Grating Couplers Near 1310 nm Fabricated by 248-nm DUV Lithography.
- Author
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Ruizhi Shi, Hang Guan, Novack, Ari, Streshinsky, Matthew, Lim, Andy Eu-Jin, Guo-Qiang Lo, Baehr-Jones, Tom, and Hochberg, Michael
- Abstract
We demonstrate a highly efficient grating coupler with center wavelength near 1310 nm fabricated on a silicon-on-insulator (SoI) wafer by 248-nm deep ultraviolet lithography. One of the lowest reported losses of 2 dB is achieved using feature sizes of 200 nm and without other process enhancements, such as polysilicon. The higher efficiency is obtained through improved mode-matching based on a novel genetic algorithm, which utilizes two different etch depths. The 3-dB bandwidth is 50 nm, and the back-reflection to the waveguide is better than 20 dB. The result shows low-loss coupling between waveguides and single-mode fibers for 1310~nm applications suitable for mass production on the commonly used 220-nm SoI platform. [ABSTRACT FROM PUBLISHER]
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- 2014
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8. DUV Lithography
- Author
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Bhushan, Bharat, editor
- Published
- 2012
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9. Nano-scale patterning using pyramidal prism based wavefront interference lithography.
- Author
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Sidharthan, R. and Murukeshan, VM
- Subjects
PHOTOLITHOGRAPHY ,DIFFRACTION patterns ,PRISMS ,WAVELENGTHS ,LASERS ,MATHEMATICAL symmetry ,LATTICE theory - Abstract
Abstract: In this work we propose to fabricate nano-scale square lattice features using the principle of four wavefront interference employing a pyramidal prism. A UV laser of 266nm wavelength was used to pattern features on thinned positive tone resist AZ 7220 using single exposure technique. It was demonstrated that features with sub 500nm pitch size could be recorded using a pyramidal prism with edge angle of 30.4°. Holes with diameter around 187nm in square symmetry with pitch of 414nm were fabricated. The proposed setup is relatively simple, requiring minimum number of components. [Copyright &y& Elsevier]
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- 2011
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10. ANTI-REFLECTIVE POLYMER COATINGS IN OPTICAL MICROLITHOGRAPHY.
- Author
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De, Binod, Malik, Sanjay, Dilocker, Stephanie, Spaziano, Gregory, Biafore, John, and Bowden, Murrae
- Subjects
- *
SURFACE coatings , *LITHOGRAPHY , *POLYMERS - Abstract
Dedicated to the memory of Professor Sukant K. Tripathy The use of polymers based on biphenyl methacrylate as antireflective coatings (ARC) in lithographic applications is described. The optimum range of refractive index (n) and complex index (k) resulting in minimal reflectivity, as predicted by Prolith simulation, was 1.56 to 1.76 and 0.125 to 0.275, respectively, which corresponded to polymers containing 50 to 70 mol% of biphenyl methacrylate. ARCs from these polymers were formulated with a melamine crosslinker and a thermally activated catalyst. Optimal lithographic performance was obtained by baking the spin-coated films at 200°C for 90 seconds for crosslinker concentrations less than 7.5% as confirmed by lack of footing and scum at imaging layer/ARC interface. [ABSTRACT FROM AUTHOR]
- Published
- 2002
- Full Text
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11. Micro et nanostructures ZnO préparées par photolithographie UV profond pour des applications électroniques et magnétiques
- Author
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Yeh, Chun-Cheng, Institut de Science des Matériaux de Mulhouse (IS2M), Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Institut de Chimie du CNRS (INC)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA), Université de Haute Alsace - Mulhouse, and Olivier Soppera
- Subjects
Metal oxide ,DUV lithography ,Lithographie UV-profond ,Sol-gel chemistry ,ZnO ,Chimie sol-gel ,Direct-patterning ,Structuration directe ,[CHIM.OTHE]Chemical Sciences/Other ,Nanofabrication ,Oxyde métallique - Abstract
In this thesis, an in-depth investigation to the photosensitive zinc methacrylate (ZnMAA) precursor was made. Zinc methacrylate can be crosslinked under DUV (193 nm) irradiation. The photo-induced solidification is attributed to the partial decomposition of the ZnMAA complex, which gives rise to the following hydrolysis-condensation reactions and the formation of Zn-O-Zn networks. The bonding variation and decomposition of organic species caused by DUV irradiation were carefully investigated by FTIR, XPS and ellipsometry and discussed in Chapter III. DUV irradiation provokes clivage of MAA ligands from zinc cations. However, the intensity of MAA ligands can only be reduced to ~2/3 of its initial intensity regardless the extension of irradiation time, implying only a small amount oxide network can be induced by DUV irradiation. The small amount of Zn-O-Zn networks inside the photo-irradiated regions can effectively decrease the solubility of photo-irradiated regions in polar solvents, which makes ZnMAA precursor just like a negative tone resist and able to be patterned into two-dimensional structures by DUV lithography. Due to good photosensitivity to DUV light (193 nm), the dimension of DUV-patterned ZnMAA structures can be decreased to sub-micro by using binary masks and the effects of each pattering step including (i) DUV exposure, (ii) prebaking and (iii) development on the size and shape of DUV-patterned ZnMAA structures are discussed in Chapter IV. In order to fabricate nanoscale ZnMAA structures, a home-made DUV interference system was used to pattern ZnMAA precursor and 300 nm periodic lines were successfully made. Applications as TFT transistor, gaz sensor and magnetic materials are shown.; Ce travail a consisté à mettre au point et étudier des formulations à base d’un précurseur photosensible de Zn (Zinc méthacrylate, ZnMAA). Déposé sous forme de film mince, ce précurseur peut être réticulé par une irradiation dans l’UV profond (193 nm). Il est montré que la réticulation est la conséquence d’une décomposition photoinduite partielle des précurseurs, qui provoque des réactions de condensations, conduisant à la formation du réseau Zn-O-Zn. Cette réaction a été caractérisée par spectroscopie FTIR, XPS et ellipsométrie (chapitre III). Il est montré qu’elle est partielle mais efficace pour conférer au matériau un caractère de résine à tonalité négative, pouvant être utilisée en écriture laser directe. Des structures submicrométriques ont été préparées avec cette résine. Les différentes étapes du procédé de photolithographie sont discutées dans le chapitre IV. En particulier, l’étape de recuit thermique pour obtenir un matériau ZnO est étudiée pour expliquer son impact sur la géométrie des structures obtenues. Le matériau ZnO structuré par cette voie est utilisé enfin pour fabriquer des dispositifs : transistor, capteur de gaz, réseau à propriétés magnétiques, prouvant l’intérêt de cette approche de microstructuration basée sur un matériau préparé par voie liquide.
- Published
- 2017
12. Simulation and fabrication of silicon nitride microring resonator by DUV lithography
- Author
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Luis A. M. Barea, Tayeb M-Brahim, Olivier de Sagazan, Giuseppe A. Cirino, Antonio A. G. von Zuben, Newton C. Frateschi, Bruno Bêche, Hervé Lhermite, Institut d'Electronique et de Télécommunications de Rennes (IETR), Centre National de la Recherche Scientifique (CNRS)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES), Departamento de Engenharia Elétrica, Universidade Federal de São Carlos [São Carlos] (UFSCar), Instituto de Fisica Gleb Wataghin (IFGW), Universidade Estadual de Campinas (UNICAMP), Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Centre National de la Recherche Scientifique (CNRS), Universidade Estadual de Campinas = University of Campinas (UNICAMP), and Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Fabrication ,Materials science ,Silicon photonics ,02 engineering and technology ,Biochemical sensing ,law.invention ,[SPI.MAT]Engineering Sciences [physics]/Materials ,chemistry.chemical_compound ,Resonator ,020210 optoelectronics & photonics ,law ,0202 electrical engineering, electronic engineering, information engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Lithography ,chemistry.chemical_classification ,Plasma etching ,business.industry ,DUV Lithography ,Biomolecule ,Evanescent coupling ,Microcavity resonator ,chemistry ,Silicon nitride ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,Photolithography ,business - Abstract
International audience; This work reports the design and fabrication of silicon nitride-based microresonators by employing DUV optical lithography and ICP-RIE plasma etching. Microring devices with high Q factors provide high sensitivity and low detection limit, enabling their use in biochemical sensing applications. With these properties, the devices can be used to detect and quantify the biomolecules present in a homogeneous solution, by detecting an effective refractive index change, without using fluorescent labels.
- Published
- 2016
13. All-Glass, Large Metalens at Visible Wavelength Using Deep-Ultraviolet Projection Lithography.
- Author
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Park JS, Zhang S, She A, Chen WT, Lin P, Yousef KMA, Cheng JX, and Capasso F
- Subjects
- Optics and Photonics, Glass chemistry, Nanostructures chemistry, Printing, Silicon Dioxide chemistry, Ultraviolet Rays
- Abstract
Metalenses, planar lenses realized by placing subwavelength nanostructures that locally impart lenslike phase shifts to the incident light, are promising as a replacement for refractive optics for their ultrathin, lightweight, and tailorable characteristics, especially for applications where payload is of significant importance. However, the requirement of fabricating up to billions of subwavelength structures for centimeter-scale metalenses can constrain size-scalability and mass-production for large lenses. In this Letter, we demonstrate a centimeter-scale, all-glass metalens capable of focusing and imaging at visible wavelength, using deep-ultraviolet (DUV) projection stepper lithography. Here, we show size-scalability and potential for mass-production by fabricating 45 metalenses of 1 cm diameter on a 4 in. fused-silica wafer. The lenses show diffraction-limited focusing behavior for any homogeneously polarized incidence at visible wavelengths. The metalens' performance is quantified by the Strehl ratio and the modulation transfer function (MTF), which are then compared with commercial refractive spherical and aspherical singlet lenses of similar size and focal length. We further explore the imaging capabilities of our metalens using a color-pixel sCMOS camera and scanning-imaging techniques, demonstrating potential applications for virtual reality (VR) devices or biological imaging techniques.
- Published
- 2019
- Full Text
- View/download PDF
14. High efficiency blazed fiber-chip grating coupler with interleaved trenches
- Author
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Halir R, Alejandro Ortega-Moñux, Daniel Benedikovic, Íñigo Molina-Fernández, Wang S, Carlos Alonso-Ramos, Jens H. Schmid, D.-X. Xu, Cheben P, J-M. Fedeli, and Milan Dado
- Subjects
SOI ,Silicon photonics ,Materials science ,silicon photonics ,Silicon ,business.industry ,Bandwidth (signal processing) ,high-efficiency ,silicon wafers ,chemistry.chemical_element ,Silicon on insulator ,grating couplers ,coupling efficiency ,silicon thickness ,Grating ,Chip ,DUV lithography ,Optics ,chemistry ,integrated optics ,Optoelectronics ,Wafer ,SOI substrates ,business ,Lithography - Abstract
We demonstrate a fiber-chip surface grating coupler that interleaves standard full and shallow-etched trenches to maximize directionality in the upward direction. The coupler is implemented in a regular SOI substrate with 220 nm silicon thickness and etch depths of 220 nm (full etch) and 70 nm (shallow etch), as offered by silicon photonic foundries. The blazing effect is controlled by adjusting the separation between the two sets of trenches. This way, grating directionality exceeding 95% is achieved independently of the bottom oxide (BOX) thickness. Couplers have been fabricated at LETI using 193 nm DUV lithography on 200 mm SOI wafers with 2 μm BOX. The measured coupling efficiency is-2.1 dB with a 3 dB bandwidth of 52 nm., SPIE Optics + Optoelectronics, April 13-15, 2015, Prague, Czech Republic, Series: Proceedings of SPIE; no. 9516
- Published
- 2015
15. Progress in deep-UV photoresists
- Author
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Sahoo, P. B., Vyas, R., Wadhwa, M., and Verma, S.
- Published
- 2002
- Full Text
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16. Single etch fibre-to-chip grating couplers for high-volume production in SOI
- Author
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Pavel Cheben, Dan-Xia Xu, Rubin Ma, Íñigo Molina-Fernández, J-M. Fedeli, Robert Halir, Adam Densmore, Siegfried Janz, and Jens H. Schmid
- Subjects
Fiber gratings ,Fabrication ,Materials science ,sub-wave length grating ,business.industry ,Volume (computing) ,photonics ,Silicon on insulator ,grating couplers ,Grating ,Chip ,effective medium ,high-volume production ,Optics ,DUV lithography ,Optoelectronics ,sub-wavelength structures ,business ,effective media ,single etch ,Lithography - Abstract
Fibre-to-chip grating couplers are an efficient means for injecting and extracting light from silicon-wire waveguides. Here we present the design of single-etch couplers, based on effective media implemented with sub-wavelength gratings. We show that the pitch of these sub-wavelength structures can be increased to make their fabrication compatible with deep-ultraviolet lithography, without compromising their effective medium behavior. We experimentally demonstrate fully-etched grating couplers fabricated with DUV lithography. © 2011 IEEE., 2011 ICO International Conference on Information Photonics, IP 2011, 18 May 2011 through 20 May 2011, Ottawa, ON
- Published
- 2011
17. A high performance 16-Mb DRAM technology.
- Author
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Bakeman, P., Bergendahl, A., Hakey, M., Horak, D., Luce, S., and Pierson, B.
- Abstract
A high performance 16-Mb DRAM technology is presented. The key issues that must be considered to achieve high yield and reduced cost are described. Technology elements include: deep trench capacitor node with thick oxide collar for improved packing density, variable-size shallow trench isolation (STI) for device performance and ease of integration, polysilicon surface strap to connect the capacitor node to the transfer device, and smoothed dep/etched phosphosilicate glass (PSG) passivation. The application of the above technology elements in conjunction with the MINT cell structure makes it possible to achieve a DRAM cell size of 4.13 μm2, using six 0.5-μm critical-dimension and 0.2-μm overlay lithography levels. Up to ten sequential process steps are performed in a single cluster. A 50-ns access time has been demonstrated [ABSTRACT FROM PUBLISHER]
- Published
- 1990
- Full Text
- View/download PDF
18. KrF excimer laser lithography with high sensitivity positive resist and high power laser.
- Author
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Tani, Y., Sasago, M., Momura, N., Fujimoto, H., Furuya, N., Ono, T., Horiuchi, N., and Miyata, T.
- Abstract
A positive resist with high sensitivity and stability named ASKA (Alkaline Soluble Kinematics using Acid generator) is described. A KrF excimer laser with a maximum laser power of 8.8 W and more than 109 pulses named PCR (polarization coupled resonator) is also presented. The result of KrF excimer laser lithography for 0.4-μm VLSI using this combination of ASKA and PCR technologies indicates improved throughput over conventional g-line lithography [ABSTRACT FROM PUBLISHER]
- Published
- 1990
- Full Text
- View/download PDF
19. Nano-scale patterning using pyramidal prism based wavefront interference lithography
- Author
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Vadakke Matham Murukeshan and Raghuraman Sidharthan
- Subjects
Wavefront ,Materials science ,business.industry ,DUV Lithography ,Physics and Astronomy(all) ,Square lattice ,Square (algebra) ,Interference lithography ,Wavelength ,Optics ,Resist ,Interference (communication) ,Pyramidal prism ,Prism ,business - Abstract
In this work we propose to fabricate nano-scale square lattice features using the principle of four wavefront interference employing a pyramidal prism. A UV laser of 266 nm wavelength was used to pattern features on thinned positive tone resist AZ 7220 using single exposure technique. It was demonstrated that features with sub 500 nm pitch size could be recorded using a pyramidal prism with edge angle of 30.4°. Holes with diameter around 187 nm in square symmetry with pitch of 414 nm were fabricated. The proposed setup is relatively simple, requiring minimum number of components.
- Full Text
- View/download PDF
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