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Ar/O2 - R eactive I on B eam E tching (RIBE) is a very versatile dry etching method to realize microstructures even in the nm-scale range in the material system InGaAsP/InP. In this paper we demonstrate the possibility to realize steep profiles with an angle of inclination of around 83° and 600 nm in depth. By using a special combination of angles of ion incidence, usually occuring drawbacks of ion beam etching techniques are overcome. Epitaxial overgrowth of stripes etched this way by L ow P ressure- M etal o rganic V apour D eposition (LP-MOCVD) shows a clear dependency on crystallographic orientation ([011] or [0–11]) of the stripes.

An integrated all-active Mach-Zehnder wavelength converter, optimized for 10-Gb/s counterpropagative operation, is described. The various active sections of the device were separately designed, taking into account their required functions as well as the constraints imposed by the all-active integration. The resulting optimizations are discussed, and the predicted performance parameters confirmed by experimental results.

The authors have studied the combination of the two alternative precursors DADI (dimethylaminopropyl-dimethylindium) and tertiary-butyl-arsine (TBA) in atmospheric pressure metalorganic vapor phase epitaxy of GaInAs lattice matched to InP. They could not detect any problem which could be specifically due to this precursor combination. In particular, no parasitic side reactions have been observed either directly or indirectly. The growth of GaInAs at a very low V/III ratio of 2 could be realized with this precursor combination. By studying selectively grown GaInAs stripes which have been grown at low pressure using either DADI or TMIn, a better selectivity was obtained for the DADI grown structures. The growth rate enhancement near the edge of larger fields as well as the composition changes for different ratios of stripe width and masked area could be lowered by this precursor. >

Dimethylaminopropyl-dimethyl-indium (DADI) was used to grow GaInAs and GaInP in combination with two Ga precursors: dimethylaminopropyl-diethyl-gallium (DADEG) and the adduct TMGa-NH/sup i/Pr2. No side reactions with the hydrides could be detected. It is shown that the quality of the layers suffered from the instability of the evaporation rate of DADEG and from some gas-phase reactions between DADI and the Ga-adduct at atmospheric pressure near the substrate surface, although the evaporation rate of DADI is stable over time, as monitored by the composition reproducibility of ternary layers. Due to its lower chemical reactivity DADI can be easily synthesized in high purity, as demonstrated by Hall and photoluminescence (PL) experiments on the layers grown with DADI batches not specially purified. >

A four-channel wavelength selector with 200 GHz channel spacing monolithically integrated on InP is reported. Record low fibre-to-fibre insertion loss of 1.5 dB was obtained at a bias current of only 30 mA. BER performance at 2.5 Gbit/s has also been investigated.

Power-efficient wavelength conversion in the co-propagative configuration, with high input signal rejection and at bit rates of up to 5 Gbit/s, is reported using a novel all-active dual-order mode Mach-Zehnder wavelength converter.