Planar and selective MOVPE of GaInAs-InP structures with novel group III and group V precursors

The authors have studied the combination of the two alternative precursors DADI (dimethylaminopropyl-dimethylindium) and tertiary-butyl-arsine (TBA) in atmospheric pressure metalorganic vapor phase epitaxy of GaInAs lattice matched to InP. They could not detect any problem which could be specifically due to this precursor combination. In particular, no parasitic side reactions have been observed either directly or indirectly. The growth of GaInAs at a very low V/III ratio of 2 could be realized with this precursor combination. By studying selectively grown GaInAs stripes which have been grown at low pressure using either DADI or TMIn, a better selectivity was obtained for the DADI grown structures. The growth rate enhancement near the edge of larger fields as well as the composition changes for different ratios of stripe width and masked area could be lowered by this precursor. >