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This paper describes the test plan and the main results achieved by UMS during a space evaluation of its second generation 0.5 μm GaN RF power bar technology, called GH50-20. The space evaluation tests results are summarised: a life time higher than 5.106 h @ 200 °C is found, SEE, TID and DD radiation hardness safe area were defined, and failure rate below 10 FIT @ 200 °C was determined. The results also include demonstration of representative integrated circuits up to 130 W RF power level when operated in L-band in continuous wave (CW) mode. The GH50-20 technology has successfully passed the space evaluation program and is deemed suitable for use in space.

A monolithic two-stage high power, high efficiency and high robustness amplifier was developed for X-band applications. The combination of the improvement of the UMS Power PHEMT technology called PPH25X in term of breakdown, and the adapted design regarding output mismatch and overdrive explain the performances of this device. The MMIC HPA, with a surface of 14.6 mm2, provides 8 W output power in pulsed mode associated to a PAE of about 45% at ambient temperature and can operate at 6 dB compression in a wide frequency bandwidth (35% of frequency band). The good level of performance, the low sensitivity to the environment make this amplifier an excellent candidate for X band applications such as phased array active antennas.