1. Towards contact integration for III–V/Silicon heterogeneous photonics devices
- Author
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M. Brihoum, Ch. Jany, A. Halimaoui, E. Ghegin, Bertrand Szelag, Isabelle Sagnes, Ph. Rodriguez, Fabrice Nemouchi, STMicroelectronics [Crolles] (ST-CROLLES), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), ANR: ANR-10-AIRT-05,Programme Investissements d’Avenir, and ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010)
- Subjects
Materials science ,Silicon ,Hybrid silicon laser ,ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION ,Silicon on insulator ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,020210 optoelectronics & photonics ,Heterogeneously integrated III- V laser on Silicon ,Silicon Photonics ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,010302 applied physics ,Silicon photonics ,business.industry ,Semiconductor ,CMOS ,chemistry ,visual_art ,Electronic component ,visual_art.visual_art_medium ,Optoelectronics ,Photonics ,business ,Contact integration - Abstract
International audience; Silicon photonics is of great interest as it opens the way to large bandwidth and high data rates. A pioneer Silicon photonics scheme consists in integrating III-V lasers on the SOI substrates containing the passive components. However, key developments are necessary to co-integrate III-V devices with CMOS very large scale integration (VLSI). In this paper we propose a CMOS-compatible integration scheme of contacts (i.e. semiconductor metallization and plug) on III-V surfaces taking into account the limitations fixed by the operating laser device. Based on metallurgical, morphological, optical and electrical studies, processes are submitted and reviewed for the purpose of forming stable and reproducible contacts with low resistivity in a 200 millimeters fab line.
- Published
- 2016
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