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Extended defect evolution was studied in ion-implanted epitaxial silicon during high-temperature processing.

The electrical properties of interstitial clusters in ion-implanted silicon (Si) were characterized using deep level transient spectroscopy. The study focused on n-type Si and examined how the kinetics of evolution and dissociation of these clusters are affected by impurity content and implantation dose. The findings showed that only the K lines and the B lines are associated with interstitial clusters. It was found that B1, B2, KA and KS belong to the same defect clusters while KZ is linked to the occurrence of O in the Si.

The microwave photoconductive decay technique and transmission electron microscopy were used to examine the impact of platinum gettering at various sites in a polycrystalline silicon wafer. Specifically, the thermal stability and efficiency of gettering at damaged sites formed by ion implantation of boron, carbon or silicon, voids formed by helium implants of silicon, heavily doped n-type regions formed by phosphorus diffusion.

A high voltage power bipolar transistor with an integrated fast recovery diode is used in power devices. The diode is connected between the transistor's emitter and collector. The diode's switching speed can be increased by localized Pt doping, followed by a thermal process to limit the lateral diffusion of metal atoms. The transistor's current carrying capacity is minimally reduced on increasing the switching speed.

Determination of electrical and optical properties of Er-implanted Si shows that electrical activation can be increased by doping Si with oxygen or carbon. Presence of oxygen precipitates distorts the process of luminescence in the oxygen doped samples. Carbon doped samples reveal an enhancement in photoluminescence intensity. Residual defects are low in carbon-doped samples. Oxygen doped and carbon doped Si show variations of intensity ratio of the main photoluminescence peak.

The three-dimensional concentration profiles of ion-implanted Au, Pt and Zn in crystalline silicon were investigated. The results showed that the lateral spread under the mask was bigger than the vertical diffusion, especially on the side opposite to the implanted diffusion source. The features of the measured profiles were brought about by the kick-out mechanism of diffusion for the transition metals.

In this paper we demonstrate that the structural and optical properties of Si nanoclusters (Si ncs) formed by thermal annealing of SiOx films prepared by plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering are very different. In fact, at a fixed Si excess and annealing temperature, photoluminescence (PL) spectra of sputtered samples are redshifted with respect to PECVD samples, denoting a larger Si ncs size. In addition, PL intensity reaches a maximum in sputtered films at annealing temperatures much lower than those needed in PECVD films. These data are correlated with structural properties obtained by energy filtered transmission electron microscopy and electron energy loss spectroscopy. It is shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration occurs in sputtered films. These data are explained on the basis of the different initial structural properties of the as-deposited films that become crucial for the subsequent evolution. [ABSTRACT FROM AUTHOR]

The structural and optical properties of Si-rich silicon oxide (SRSO) layers obtained by plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering is examined. The studies have shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration has occurred in sputtered films.

Investigates the control of gold concentration profiles in silicon by ion implantation. Examination of unidimensional and bidimensional diffusion across the wafer surface using gold sources; Use of spreading resistance technique in observing the diffusion of ion-implanted gold in silicon single crystal; Result of the study.

Examines the concentration profiles of gold implanted and diffused in n-type silicon. Application of Rutherford backscattering spectrometry and spreading resistance techniques in the study; Assessment of the resistivity profiles of the samples; Comparison between experimental gold concentration profiles and those that were obtained by numerical solution.

Presents a study that analyzed the diffusion of ion-implanted gold in p-type silicon semiconductors. Methodology; Evaluation of the gold concentration profiles; Discussion on the diffusion equations and numerical solutions.

Studies the effect of erbium-impurity interactions on the luminescence of erbium in crystalline silicon. Method of the study; Results and discussion; Conclusion.