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We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi–Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward–Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS2-FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs., The authors would like to thank the financial support of Spanish Government under projects TEC2017-89955-P (MINECO/AEI/FEDER, UE), TEC2015-67462-C2-1-R (MINECO), and RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE). F.P. and D.J. also acknowledge the support from the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No. 785219 GrapheneCore2. A.G. acknowledges the funding by the Consejería de Economía, Conocimiento, Empresas y Universidad de la Junta de Andalucía and European Regional Development Fund (ERDF), ref. SOMM17/6109/UGR. E.G.M. gratefully acknowledges Juan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI). A.T.-L. acknowledges the FPU program (FPU16/04043). D.A. acknowledges the Army Research Office for partial support of this work, and the NSF NASCENT ERC and NNCI programs.