Search

Three distinct configurations of As2S3 chalcogenide photonic crystal fibers (PCFs) were designed to investigate supercontinuum generation (SCG). The optical properties of PCFs with the circular lattice (CL), square lattice (SL), and hexagonal lattice (HL) were comprehensively analyzed to choose the optimal fiber for SCG. This investigation facilitated the identification of three superior structures, specifically designated as #CF, #SF, and #HF, respectively. These structures are unified by operating within an all-normal dispersion regime, each presenting a lattice constant of 1.0 μm and a filling factor of 0.35. These fibers were subjected to a peak power of 4.0 kW and a pulse duration of 270 fs, culminating in an expansive supercontinuum range. Notably, the SC range extended from 2.0 to 6.5 μm for #CF, from 2.0 to 8.3 μm for #SF, and from 1.9 to 6.6 μm for #HF. The SL-PCF exhibited the broadest supercontinuum, attributed to its protracted flat dispersion band. Furthermore, compared to previously reported all-normal dispersion PCFs, the spectral range facilitated by this peak power was significantly augmented. These optical fibers promise to provide supercontinuum spectra with broad bandwidth for practical applications in sensing and gas detection. [ABSTRACT FROM AUTHOR]

Nanopatterned CuInGaS2 (CIGS) thin films synthesized by a sol-gel-based solution method and a nanoimprint lithography technique to achieve simultaneous photonic and electrical enhancements in thin film solar cell applications are demonstrated. The interdigitated CIGS nanopatterns in adjacent CdS layer form an ordered nanoscale heterojunction of optical contrast to create a light trapping architecture. This architecture concomitantly leads to increased junction area between the p-CIGS/n-CdS interface, and thereby influences effective charge transport. The electron beam induced current and capacitance-voltage characterization further supports the large carrier collection area and small depletion region of the nanopatterned CIGS solar cell devices. This strategic geometry affords localization of incident light inside and between the nanopatterns, where created excitons are easily dissociated, and it leads to the enhanced current generation of absorbed light. Ultimately, this approach improves the efficiency of the nanopatterned CIGS solar cell by 55% compared to its planar counterpart, and offers the possibility of simultaneous management for absorption and charge transport through a nanopatterning process. [ABSTRACT FROM AUTHOR]

In this study we demonstrate the fabrication of CuInGaS2 (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions. [ABSTRACT FROM AUTHOR]

Thin film semiconductors grown using chemical bath methods produce large amounts of waste solvent and chemicals that then require costly waste processing. We replace the toxic chemical bath deposited CdS buffer layer from our Cu(In,Ga)(S,Se) 2 (CIGS)-based solar cells with a benign inkjet-printed and annealed Zn(O,S) layer using 230 000 times less solvent and 64 000 times less chemicals. The wetting and final thickness of the Zn(O,S) layer on the CIGS is controlled by a UV ozone treatment and the drop spacing, whereas the annealing temperature and atmosphere determine the final chemical composition and band gap. The best solar cell using a Zn(O,S) air-annealed layer had an efficiency of 11%, which is similar to the best conventional CdS buffer layer device fabricated in the same batch. Improving the Zn(O,S) wetting and annealing conditions resulted in the best device efficiency of 13.5%, showing the potential of this method.

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

There are four prerequisites when applying all types of thin-film solar cells to power-generating window photovoltaics (PVs): high power-generation efficiency, longevity and high durability, semitransparency or partial-light transmittance, and colorful and aesthetic value. Solid-type thin-film Cu(In,Ga)S 2 (CIGS) or Cu(In,Ga)(S,Se) 2 (CIGSSe) PVs nearly meet the first two criteria, making them promising candidates for power-generating window applications if they can transmit light to some degree and generate color with good aesthetic value. In this study, the mechanical scribing process removes 10% of the window CIGSSe thin-film solar cell with vacant line patterns to provide a partial-light-transmitting CIGSSe PV module to meet the third requirement. The last concept of creating distinct colors could be met by the addition of reflectance colors of one-dimensional (1D) photonic crystal (PC) dichroic film on the black part of a partial-light-transmitting CIGSSe PV module. Beautiful violets and blues were created on the cover glass of a black CIGSSe PV module via the addition of 1D PC blue-mirror-yellow-pass dichroic film to improve the aesthetic value of the outside appearance. As a general result from the low external quantum efficiency (EQE) and absorption of CIGSSe PVs below a wavelength of 400 nm, the harvesting efficiency and short-circuit photocurrent of CIGSSe PVs were reduced by only ∼10% without reducing the open-circuit voltage (V OC ) because of the reduced overlap between the absorption spectrum of CIGSSe PV and the reflectance spectrum of the 1D PC blue-mirror-yellow-pass dichroic film. The combined technology of partial-vacancy-scribed CIGSSe PV modules and blue 1D PC dichroic film can provide a simple strategy to be applied to violet/blue power-generating window applications, as such a strategy can improve the transparency and aesthetic value without significantly sacrificing the harvesting efficiency of the CIGSSe PV modules.