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2. CF4 plasma-based atomic layer etching of Al2O3 and surface smoothing effect.

Author

Chen, Chien-Wei, Cho, Wen-Hao, Chang, Chan-Yuen, Su, Chien-Ying, Chu, Nien-Nan, Kei, Chi-Chung, and Li, Bor-Ran

Subjects
ALUMINUM oxide films, ALUMINUM oxide, X-ray photoelectron spectroscopy, PLASMA etching, ATOMIC force microscopy, ROOT-mean-squares
Abstract

Plasma-based Al2O3 atomic layer etching (pALE) has a reaction mechanism similar to thermal Al2O3 ALE (tALE). The main difference between the two methods is that pALE uses plasma instead of HF in tALE to fluorinate Al2O3 to AlF3. In this study, the CF4 plasma source commonly used for dry etching is combined with a self-developed low-ion-bombardment remote Al2O3 plasma-based ALE system to obtain Al2O3 plasma fluorination conditions, and then the AlCl(CH3)2 (dimethylaluminum chloride) precursor is used to develop the pALE Al2O3 process. In addition to using x-ray photoelectron spectroscopy to investigate ideal fluorination conditions of CF4 plasma for Al2O3 films and establishing the linear etching rate curves of pALE at different process temperatures (250–400 °C), we used atomic force microscopy to analyze the surface morphology of the Al2O3 films after dry etching and pALE. We showed that pALE can smooth Al2O3 films with a root mean square surface roughness of 1.396–0.655 nm and used anodic aluminum oxide substrates with nanotrench structures to demonstrate that pALE can improve the surface roughness of nonplanar structures. [ABSTRACT FROM AUTHOR]

Published
2023
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11. Fast Fabrication of a Ag Nanostructure Substrate Using the Femtosecond Laser for Broad-Band and Tunable Plasmonic Enhancement

Author

Tseng, Ming Lun, primary, Huang, Yao-Wei, additional, Hsiao, Min-Kai, additional, Huang, Hsin Wei, additional, Chen, Hao Ming, additional, Chen, Yu Lim, additional, Chu, Cheng Hung, additional, Chu, Nien-Nan, additional, He, You Je, additional, Chang, Chia Min, additional, Lin, Wei Chih, additional, Huang, Ding-Wei, additional, Chiang, Hai-Pang, additional, Liu, Ru-Shi, additional, Sun, Greg, additional, and Tsai, Din Ping, additional

Published
2012
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12. Plasmonic hotspots on laser-treated AgOx thin film: A novel nanofabrication technique for plasmonic substrate

Author

Tseng, Ming Lun, primary, Huang, Yao-Wei, additional, Hsiao, Min-Kai, additional, Huang, Hsin Wei, additional, Chen, Hao Ming, additional, Chu, Cheng Hung, additional, Chu, Nien-Nan, additional, He, You Je, additional, Chang, Chia Min, additional, Chen, Yu Lim, additional, Lin, Wei Chih, additional, Liu, Ru-Shi, additional, Huang, Ding-Wei, additional, Chiang, Hai-Pang, additional, Sun, Greg, additional, and Tsai, Din Ping, additional

Published
2012
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13. Applications of plasmonic hotspots on laser-treated AgOx thin film

Author

Tseng, Ming Lun, primary, Huang, Yao-Wei, additional, Hsiao, Min-Kai, additional, Huang, Hsin Wei, additional, Lin, Yu-Hsuan, additional, Chu, Cheng Hung, additional, Chu, Nien-Nan, additional, He, You Je, additional, Chang, Chia Min, additional, Kuo, Li Chung, additional, Chen, Yu Lim, additional, Lin, Wei Chih, additional, Huang, Ding-Wei, additional, Chiang, Hai-Pang, additional, and Tsai, Din Ping, additional

Published
2012
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18. Characterization of Ge2Sb2Te5 thin film alloys using conductive-tip atomic force microscopy.

Author

Chang, Chia Min, Liu, Yen Ju, Tseng, Ming Lun, Chu, Nien-Nan, Huang, Ding-Wei, Mansuripur, Masud, and Tsai, Din Ping

Abstract

Conductive-tip atomic force microscopy (C-AFM) is a powerful tool for investigating the electrical characteristics of phase-change materials commonly used for electronic and optical data storage. We demonstrate the usefulness of this technique by examining the electrical conductivity of crystalline marks recorded with a focused laser pulse on a thin Ge2Sb2Te5 film. [ABSTRACT FROM AUTHOR]

Published
2012
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20. Applications of plasmonic hotspots on laser-treated AgOx thin film.

Author

Tseng, Ming Lun, Huang, Yao-Wei, Hsiao, Min-Kai, Huang, Hsin Wei, Lin, Yu-Hsuan, Chu, Cheng Hung, Chu, Nien-Nan, He, You Je, Chang, Chia Min, Kuo, Li Chung, Chen, Yu Lim, Lin, Wei Chih, Huang, Ding-Wei, Chiang, Hai-Pang, and Tsai, Din Ping

Abstract

The femto-second-laser-treated AgOx thin film is used as the plasmon-active substrate for the applications of surface-enhanced Raman scattering (SERS), molecule sensing, and photocatalyst. The proposed technique is helpful for the solar energy harvest, green energy source, and biosensing with high efficiency and throughput. [ABSTRACT FROM PUBLISHER]

Published
2012

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