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In recent decades, much research effort has been invested in the development of photonic integrated circuits, and silicon-on-insulator technology has been established as a reliable platform for highly scalable silicon-based electro-optical modulators. However, the performance of such devices is restricted by the inherent material properties of silicon. An approach to overcoming these deficiencies is to integrate organic materials with exceptionally high optical nonlinearities into a silicon-on-insulator photonic platform. Silicon–organic hybrid photonics has been shown to overcome the drawbacks of silicon-based modulators in terms of operating speed, bandwidth, and energy consumption. This work reviews recent advances in silicon–organic hybrid photonics and covers the latest improvements to single components and device concepts. Special emphasis is given to the in-device performance of novel electro-optical polymers and the use of different electro-optical effects, such as the linear and quadratic electro-optical effect, as well as the electric-field-induced linear electro-optical effect. Finally, the inherent challenges of implementing non-linear optical polymers on a silicon photonic platform are discussed and a perspective for future directions is given.

In this work, we report on the integration of functionalized organic materials in a photonic integrated circuit technology for electro-optical modulators. We outline some of the identified challenges in the hybrid integration of organic materials in a photonic integrated circuit technology and present an electro-optical modulator with ultra-low energy consumption. In a second part, we present a simulation study and provide a design guideline to achieve an optimized slot waveguide structure for the integration of a lightsource consisting of Erbium doped quinoline.

The correct identification of the third-order nonlinear optical effect of stimulated Raman scattering (SRS) led in the last years to a versatile method to generate new laser wavelengths resulting from a photon-phonon-interaction. There is the possibility to down- (Stokes) or up-shifting (anti-Stokes) of the pump laser frequency. The size of the frequency shift depends on the Raman-active material and the excitability of their SRS-promoting vibration-modes. Prominent Raman crystals include BaNO3 and other nitrates, KGW and other tungstates, YVO4 and other vanadates as well as diamond. Recently, we observed SRS in the laser crystal LuAlO3 with one SRS-active phonon mode and the natural crystal Spodumene (α-LiAlSi2O6), which has three corresponding SRS-active vibration modes. Selective amplification of one particular spectral line generated through SRS is possible by placing the Raman crystal into a frequency-selective optical resonator, whose optical feedback is selective for only one Stokes- or anti-Stokes component. Raman lasers can be used in many applications, e.g. differential absorption LIDAR systems (DIAL, Light Detection and Ranging) to detect trace gases like carbon dioxide (CO2), ozone (O3) or water vapor (H2O). Various pumping schemes and resonator designs have been investigated focusing on good conversion efficiency, high spatial beam quality and high pulse energy of the output beam. The DIAL technique requires laser sources with high average output power combined with an excellent beam quality (M2 < 2). One possible solution can be found in an effect called beam-cleanup, which takes place by using Raman lasers and amplifiers.

To improve the feasibility of endoscopic inspection processes we developed a system that provides online information about position, orientation and viewing direction of endoscopes, to support the analysis of endoscopic images and to ease the operational handling of the equipment. The setup is based on an industrial endoscope consisting of a camera, various MEMS and multimodal data fusion. The software contains algorithms for feature and geometric structure recognition as well as Kalman filters. To track the distal end of the endoscope and to generate 3D point cloud data in real time the optical and photometrical characteristics of the system are registered and the movement of the endoscope is reconstructed by using image processing techniques.

Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed.Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed.

The emission of commercial solid-state lasers is shifted by Raman lasers to selected wavelengths suitable for trace gas detection. High power Raman lasers based on Ba(NO3)2, diamond and silicon detect CO2, O3 and H2O. Raman lasers base on the physical effect of stimulated Raman scattering. Two new Raman crystals (Spodumene and LuAlO3) are investigated and their SRS-spectra is shown.