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Spectroscopic reflectometry for characterization of Through Silicon Via profile of Bosch etching process
- Source :
- Journal of Vacuum Science & Technology B. 37:062205
- Publication Year :
- 2019
- Publisher :
- American Vacuum Society, 2019.
-
Abstract
- Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed.Through Silicon Via (TSV) technology is a key in 3D integration of circuits by the creation of interconnects using vias, which go through the full silicon wafer. Typically, a highly-selective Bosch Si etch process is used. It is characterized by a high etch rate at a high aspect ratio, whereby scallops on the sidewalls are generated. In this work, square via arrays with dimensions from 3 to 50 μm and up to 300 μm depth were fabricated and analyzed by spectroscopic reflectometry. The reflectometric data are compared to simulations by a novel theoretical approach. In order to simulate the reflectance spectra of TSV arrays, a combination of 2D and 3D rigorous coupled wave analysis was applied. Besides the via depth, the sidewall angle and the corner radius of the bottom profile were considered in the model. The general requirements on spectral resolution in TSV metrology are discussed.
- Subjects :
- Materials science
Silicon
Through-silicon via
business.industry
Process Chemistry and Technology
chemistry.chemical_element
Aspect ratio (image)
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Metrology
chemistry
Etching (microfabrication)
Materials Chemistry
Optoelectronics
Wafer
Electrical and Electronic Engineering
Reflectometry
Rigorous coupled-wave analysis
business
Instrumentation
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 37
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B
- Accession number :
- edsair.doi...........305cc47e88013313f0e2213096e5bcdd