1. Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates
- Author
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Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, and Heike Riel
- Subjects
heterojunctions ,III-V semiconductor materials ,nanowires ,tunnel diode ,tunnel transistor ,low-power electronics. ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates of any crystalline orientation. Electrical characterization of diodes and of TFETs fabricated using this method is presented; the TFETs exhibit a good overall performance with on-currents, Ion of 6 μA/μm (|VGS| = |VDS| = 1 V) and a room-temperature subthreshold swing (SS) of ~160 mV/dec over at least three orders of magnitude in current. Temperature-dependent measurements indicate that SS is limited by traps. We demonstrate improved TFET Ion performance by 1-2 orders of magnitude by scaling the equivalent oxide thickness from 2.7 to 1.5 nm. Furthermore, a novel benchmarking scheme is proposed to allow the comparison of different TFET data found in literature despite the different measurement conditions used.
- Published
- 2015
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