Search

La0.7Sr0.3MnO3, a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature (TC) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La0.7Sr0.3MnO3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only (00 l) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic TC and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with TC = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

Aspects of the optoelectronic performance of thin-film ferromagnetic materials are evaluated for application in ultrafast devices. Dynamics of photocarriers and their associated spin polarization are measured using transient reflectivity (TR) measurements in cross linear and circular polarization configurations for La0.7Sr0.3MnO3 films with a range of thicknesses. Three spin-related recombination mechanisms have been observed for thicker films (thickness of d ≥ 20 nm) at different time regimes (τ), which are attributed to the electron–phonon recombination (τ 1 ns). Density functional theory (DFT+U) based first-principles calculations provide information about the nature of the optical transitions and their probabilities for the majority and the minority spin channels. These transitions are partly responsible for the aforementioned recombination mechanisms, identified through the compari...

La0.7Sr0.3MnO3 is a strongly correlated complex oxide. There is limited information about La0.7Sr0.3MnO3 thin films’ transient reflectivity (TR), where differences in ultra-fast dynamics due to surface and interface effects are expected. By decreasing the film thickness, additional energy states emerge, providing extra relaxation channels. Due to the reduced absorption in thin films, observing the effects of these extra states in TR signal is challenging, especially in a hole doped system such as La0.7Sr0.3MnO3. Moreover, in lower thicknesses, sinusoidal behavior superimposed on the TR signal is not analyzable by Fourier transforms. Wavelet transforms are perfect tools to analyze these fast-vanishing oscillations.

The properties of many materials can be strongly affected by the atomic valence of the contained individual elements, which may vary at surfaces and other interfaces. These variations can have a critical impact on material performance in applications. A non-destructive method for the determination of layer-by-layer atomic valence as a function of material thickness is presented for La0.7Sr0.3MnO3 (LSMO) thin films. The method utilizes a combination of bulk- and surface-sensitive X-ray absorption spectroscopy (XAS) detection modes; here, the modes are fluorescence yield and surface-sensitive total electron yield. The weighted-average Mn atomic valence as measured from the two modes are simultaneously fitted using a model for the layer-by-layer variation of valence based on theoretical model Hamiltonian calculations. Using this model, the Mn valence profile in LSMO thin film is extracted and the valence within each layer is determined to within an uncertainty of a few percent. The approach presented here could be used to study the layer-dependent valence in other systems or extended to different properties of materials such as magnetism.

Aspects of the optoelectronic performance of thin-film ferromagnetic materials are evaluated for application in ultrafast devices. Dynamics of photocarriers and their associated spin polarization are measured using transient reflectivity (TR) measurements in cross linear and circular polarization configurations for La

La0.7Sr0.3MnO3, a strong semi-metallic ferromagnet having robust spin polarization and magnetic transition temperature (TC) well above 300 K, has attracted significant attention as a possible candidate for a wide range of memory, spintronic, and multifunctional devices. Since varying the oxygen partial pressure during growth is likely to change the structural and other physical functionalities of La0.7Sr0.3MnO3 (LSMO) films, here we report detailed investigations on structure, along with magnetic behavior of LSMO films with same thickness (~30 nm) but synthesized at various oxygen partial pressures: 10, 30, 50, 100, 150, 200 and 250 mTorr. The observation of only (00 l) reflections without any secondary peaks in the XRD patterns confirms the high-quality synthesis of the above-mentioned films. Surface morphology of the films reveals that these films are very smooth with low roughness, the thin films synthesized at 150 mTorr having the lowest average roughness. The increasing of magnetic TC and sharpness of the magnetic phase transitions with increasing oxygen growth pressure suggests that by decreasing the oxygen growth pressure leads to oxygen deficiencies in grown films which induce oxygen inhomogeneity. Thin films grown at 150 mTorr exhibits the highest magnetization with TC = 340 K as these thin films possess the lowest roughness and might exhibit lowest oxygen vacancies and defects. Interpretation and significance of these results in the 30 nm LSMO thin films prepared at different oxygen growth pressures are also presented, along with the existence and growth pressure dependence of negative remanent magnetization (NRM) of the above-mentioned thin films.

Transient reflectivity (TR) measurements for La0.7Sr0.3MnO3 thin films indicate enhanced surface recombination of charge carriers for thinner films (d < 20 nm). Wavelet analysis of residual TR shows abrupt oscillatory modes with close energy ranges.

The depth-dependent magnetization in thin film oxygen stoichiometric and oxygen-deficient La0.7Sr0.3MnO3 is investigated by using polarized neutron reflectivity and DC bulk magnetometry. The polarized neutron reflectivity results reveal that the stoichiometric sample shows enhanced interfacial magnetization relative to the rest of the film. The oxygen-deficient sample exhibits a reduced average magnetization from the optimized recipe. Both films show regions of suppressed magnetization at the surface regardless of the growth pressure. The oxygen stoichiometric film does not show an interfacial dead layer, whereas the oxygen-deficient film exhibits a dead layer whose thickness changes with temperature. At a low applied field, we observe striking differences in the depth dependence of the magnetic ordering, with the oxygen-deficient film exhibiting exchange spring behavior, while the stoichiometric film shows a constant magnetization direction across the film. These results suggest that the incorporation of oxygen vacancies during growth leads to an accumulation of vacancies at the interface, which is enhanced at higher temperature due to increased oxygen mobility, creating a region of reduced magnetism that couples to the rest of the film. These results offer insight into the complex behavior and role of oxygen vacancies in the magnetism of these systems. Additionally, the study reveals further details of the negative magnetization in La0.7Sr0.3MnO3 reported in previous studies, which are discussed here.

Applications of wavelet analysis in ultra-thin film transient reflectivity (TR) measurements have been investigated. Advantages of utilizing different localized wavelet bases, in position and time, have been addressed on the residual TR signals. Morse wavelets have been used to obtain information from the abrupt oscillatory modes in the signal, which are not distinguishable with conventional methods such as Fourier transforms. These abrupt oscillatory modes are caused by the surface, interface, or any short-lived oscillatory modes which are suppressed in the TR signal in ultra-thin films. It is demonstrated that by choosing different Morse wavelets, information regarding different oscillatory modes in the TR signal of a heterostructure thin film is achievable. Moreover, by performing wavelet analysis on multiferroic heterostructures, oscillatory modes with very close energy ranges are easily distinguishable. For illustration, residuals of the TR signals have been obtained by a pump-probe setup in reflectivity mode on La0.7Sr0.3MnO3/SrTiO3 and BaTiO3/La0.7Sr0.3MnO3/SrTiO3 samples, where sufficient signal to noise ratios have been achieved by taking multiple scans. The residual signals have been analyzed with Morse wavelets, and multiple oscillatory modes with close energy ranges have been observed and distinguished. This approach can isolate the location of various oscillatory modes at the surface, interface and in the bulk of the heterostructure sample.

The observation of inverted magnetic hysteresis loops and negative magnetic remanence (NRM) in a 7.6 nm thin film of La0.7Sr0.3MnO3 grown on SrTiO3 substrates is reported. The film was grown employing pulsed laser deposition and characterized by reflection high-energy electron diffraction during growth and using x-ray reflectivity measurements post-growth. Magnetic properties of the film were measured from 5 K to 400 K under both the field-cooled (FC) and zero-field-cooled (ZFC) conditions. The observed results of inverted magnetic hysteresis loops and NRM are interpreted in terms of the co-existence of a magnetically inhomogeneous region consisting of superparamagnetic spin clusters with a blocking temperature T B = 240 K and the ferromagnetic state with an ordering temperature T C = 290 K. Hysteresis loop inversion is observed in the temperature region of T B

Experimental investigations of the magnetic dead layer in 7.6 nm thick film of La0.7Sr0.3MnO3 (LSMO) are reported. The dc magnetization (M) measurements for a sample cooled to T = 5 K in applied field H = 0 reveal the presence of negative remanent magnetization (NRM) in the M vs. H (magnetic field) measurements as well as in the M vs. T measurements in H = 50 Oe and 100 Oe. The M vs. T data in ZFC (zero-field-cooled) and FC (field-cooled) protocols are used to determine the blocking temperature TB in different H. Isothermal hysteresis loops at different T are used to determine the temperature dependence of saturation magnetization (MS), remanence (MR) and coercivity HC. The MS vs. T data are fit to the Bloch law, MS (T) = M0 (1 – BT 3/2), showing a good fit for T < 100 K and yielding the nearest-neighbor exchange constant J/kB ≅ 18 K. The variations of TB vs. H and HC vs. T are well described by the model often used for randomly oriented magnetic nanoparticles with magnetic domain diameter ≈ 9 nm present in the dead-layer of thickness d =1.4 nm. Finally, the data available from literature on the thickness (D) variation of Curie temperature (TC) and MS of LSMO films grown under 200, 150, and 0.38 mTorr pressures of O2 are analyzed in terms of the finite-size scaling, with MS vs. D data fit to MS (D) = MS(b)(1-d/D) yielding the dead layer thickness d = 1.1 nm, 1.4 nm and 2.4 nm respectively. Brief discussion on the significance of these results is presented.

Strong magnetoelectric coupling can occur at the interface between ferromagnetic and ferroelectric films. Similar to work on interfacial exchange bias, photoemission electron microscopy was utilized to image both magnetic and ferroelectric domains and the resulting interfacial Ti spin in the same locations of La0.7Sr0.3MnO3/PbZr0.2Ti0.8O3 heterostructures. Multiple image analysis techniques, which could be applicable for a variety of fields needing quantitative data on image switching, confirm both improved magnetic switching and an increased population of interfacial spins with increased thickness of the ultrathin La0.7Sr0.3MnO3 layer. The perpendicular orientation of the interfacial spins is also discussed. This work suggests a magnetoelectric dead layer, with reduced interfacial magnetoelectricity when thin magnetic films are present.

The nanosized effects of short-range multimagnon excitation behavior and short-circuit diffusion in NiO nanowalls synthesized using the Ni grid thermal treatment method were observed. The energy dispersive spectroscopy mapping technique was used to characterize the growth mechanism, and confocal Raman scattering was used to probe the antiferromagnetic exchange energy J 2 between next-nearest-neighboring Ni ions in NiO nanowalls at various growth temperatures below the Neel temperature. This study shows that short spin correlation leads to an exponential dependence of the growth temperatures and the existence of nickel vacancies during the magnon excitation. Four-magnon configurations were determined from the scattering factor, revealing a lowest state and monotonic change with the growth temperature. PACS: 75.47.Lx; 61.82.Rx; 75.50.Tt; 74.25.nd; 72.10.Di