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Two-dimensional materials are extraordinarily sensitive to external stimuli, making them ideal for studying fundamental properties and for engineering devices with new functionalities. One such stimulus, strain, affects the magnetic properties of the layered magnetic semiconductor CrSBr to such a degree that it can induce a reversible antiferromagnetic-to-ferromagnetic phase transition. Using scanning SQUID-on-lever microscopy, we directly image the effects of spatially inhomogeneous strain on the magnetization of layered CrSBr, as it is polarized by a field applied along its easy axis. The evolution of this magnetization and the formation of domains is reproduced by a micromagnetic model, which incorporates the spatially varying strain and the corresponding changes in the local interlayer exchange stiffness. The observed sensitivity to small strain gradients along with similar images of a nominally unstrained CrSBr sample suggest that unintentional strain inhomogeneity influences the magnetic behavior of exfoliated samples.

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP 2 Se 6 , a van der Waals chiral ( R 3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP 2 Se 6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm 2 /Vs and on/off ratios >10 6 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP 2 Se 6 phototransistors show high gain (>4 × 10 4 ) at low intensity (≈10 -6 W/cm 2 ) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm 2 ) at a gate voltage of 60 V across 300-nm-thick SiO 2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm 2 at 20.6 W/cm 2 .

Since their first observation in 2017, atomically thin van der Waals (vdW) magnets have attracted significant fundamental, and application-driven attention. However, their low ordering temperatures, T c , sensitivity to atmospheric conditions and difficulties in preparing clean large-area samples still present major limitations to further progress, especially amongst van der Waals magnetic semiconductors. The remarkably stable, high-T c vdW magnet CrSBr has the potential to overcome these key shortcomings, but its nanoscale properties and rich magnetic phase diagram remain poorly understood. Here we use single spin magnetometry to quantitatively characterise saturation magnetization, magnetic anisotropy constants, and magnetic phase transitions in few-layer CrSBr by direct magnetic imaging. We show pristine magnetic phases, devoid of defects on micron length-scales, and demonstrate remarkable air-stability down the monolayer limit. We furthermore address the spin-flip transition in bilayer CrSBr by imaging the phase-coexistence of regions of antiferromagnetically (AFM) ordered and fully aligned spins. Our work will enable the engineering of exotic electronic and magnetic phases in CrSBr and the realization of novel nanomagnetic devices based on this highly promising vdW magnet., (© 2024. The Author(s).)

Heat-to-charge conversion efficiency of thermoelectric materials is closely linked to the entropy per charge carrier. Thus, magnetic materials are promising building blocks for highly efficient energy harvesters as their carrier entropy is boosted by a spin degree of freedom. In this work, we investigate how this spin-entropy impacts heat-to-charge conversion in the A-type antiferromagnet CrSBr. We perform simultaneous measurements of electrical conductance and thermocurrent while changing magnetic order using the temperature and magnetic field as tuning parameters. We find a strong enhancement of the thermoelectric power factor at around the Néel temperature. We further reveal that the power factor at low temperatures can be increased by up to 600% upon applying a magnetic field. Our results demonstrate that the thermoelectric properties of 2D magnets can be optimized by exploiting the sizable impact of spin-entropy and confirm thermoelectric measurements as a sensitive tool to investigate subtle magnetic phase transitions in low-dimensional magnets.

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 - 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from - 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices., (© 2024. The Author(s).)

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe 3 GeTe 2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K., (© 2024 Wiley‐VCH GmbH.)

Heavy-fermion metals are prototype systems for observing emergent quantum phases driven by electronic interactions 1-6 . A long-standing aspiration is the dimensional reduction of these materials to exert control over their quantum phases 7-11 , which remains a significant challenge because traditional intermetallic heavy-fermion compounds have three-dimensional atomic and electronic structures. Here we report comprehensive thermodynamic and spectroscopic evidence of an antiferromagnetically ordered heavy-fermion ground state in CeSiI, an intermetallic comprising two-dimensional (2D) metallic sheets held together by weak interlayer van der Waals (vdW) interactions. Owing to its vdW nature, CeSiI has a quasi-2D electronic structure, and we can control its physical dimension through exfoliation. The emergence of coherent hybridization of f and conduction electrons at low temperature is supported by the temperature evolution of angle-resolved photoemission and scanning tunnelling spectra near the Fermi level and by heat capacity measurements. Electrical transport measurements on few-layer flakes reveal heavy-fermion behaviour and magnetic order down to the ultra-thin regime. Our work establishes CeSiI and related materials as a unique platform for studying dimensionally confined heavy fermions in bulk crystals and employing 2D device fabrication techniques and vdW heterostructures 12 to manipulate the interplay between Kondo screening, magnetic order and proximity effects., (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.)

Exciton polaritons are quasiparticles of photons coupled strongly to bound electron-hole pairs, manifesting as an anti-crossing light dispersion near an exciton resonance. Highly anisotropic semiconductors with opposite-signed permittivities along different crystal axes are predicted to host exotic modes inside the anti-crossing called hyperbolic exciton polaritons (HEPs), which confine light subdiffractionally with enhanced density of states. Here, we show observational evidence of steady-state HEPs in the van der Waals magnet chromium sulfide bromide (CrSBr) using a cryogenic near-infrared near-field microscope. At low temperatures, in the magnetically-ordered state, anisotropic exciton resonances sharpen, driving the permittivity negative along one crystal axis and enabling HEP propagation. We characterize HEP momentum and losses in CrSBr, also demonstrating coupling to excitonic sidebands and enhancement by magnetic order: which boosts exciton spectral weight via wavefunction delocalization. Our findings open new pathways to nanoscale manipulation of excitons and light, including routes to magnetic, nonlocal, and quantum polaritonics., (© 2023. The Author(s).)

The transport of energy and information in semiconductors is limited by scattering between electronic carriers and lattice phonons, resulting in diffusive and lossy transport that curtails all semiconductor technologies. Using Re 6 Se 8 Cl 2 , a van der Waals (vdW) superatomic semiconductor, we demonstrate the formation of acoustic exciton-polarons, an electronic quasiparticle shielded from phonon scattering. We directly imaged polaron transport in Re 6 Se 8 Cl 2 at room temperature, revealing quasi-ballistic, wavelike propagation sustained for a nanosecond and several micrometers. Shielded polaron transport leads to electronic energy propagation lengths orders of magnitude greater than in other vdW semiconductors, exceeding even silicon over a nanosecond. We propose that, counterintuitively, quasi-flat electronic bands and strong exciton-acoustic phonon coupling are together responsible for the transport properties of Re 6 Se 8 Cl 2 , establishing a path to ballistic room-temperature semiconductors.

The interaction between distinct excitations in solids is of both fundamental interest and technological importance. One such interaction is the coupling between an exciton, a Coulomb bound electron-hole pair, and a magnon, a collective spin excitation. The recent emergence of van der Waals magnetic semiconductors 1 provides a platform to explore these exciton-magnon interactions and their fundamental properties, such as strong correlation 2 , as well as their photospintronic and quantum transduction 3 applications. Here we demonstrate the precise control of coherent exciton-magnon interactions in the layered magnetic semiconductor CrSBr. We varied the direction of an applied magnetic field relative to the crystal axes, and thus the rotational symmetry of the magnetic system 4 . Thereby, we tuned not only the exciton coupling to the bright magnon, but also to an optically dark mode via magnon-magnon hybridization. We further modulated the exciton-magnon coupling and the associated magnon dispersion curves through the application of uniaxial strain. At a critical strain, a dispersionless dark magnon band emerged. Our results demonstrate an unprecedented level of control of the opto-mechanical-magnonic coupling, and a step towards the predictable and controllable implementation of hybrid quantum magnonics 5-11 ., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

The recent discoveries of two-dimensional (2D) magnets 1-6 and their stacking into van der Waals structures 7-11 have expanded the horizon of 2D phenomena. One exciting application is to exploit coherent magnons 12 as energy-efficient information carriers in spintronics and magnonics 13,14 or as interconnects in hybrid quantum systems 15-17 . A particular opportunity arises when a 2D magnet is also a semiconductor, as reported recently for CrSBr (refs. 18-20 ) and NiPS 3 (refs. 21-23 ) that feature both tightly bound excitons with a large oscillator strength and potentially long-lived coherent magnons owing to the bandgap and spatial confinement. Although magnons and excitons are energetically mismatched by orders of magnitude, their coupling can lead to efficient optical access to spin information. Here we report strong magnon-exciton coupling in the 2D A-type antiferromagnetic semiconductor CrSBr. Coherent magnons launched by above-gap excitation modulate the exciton energies. Time-resolved exciton sensing reveals magnons that can coherently travel beyond seven micrometres, with a coherence time of above five nanoseconds. We observe these exciton-coupled coherent magnons in both even and odd numbers of layers, with and without compensated magnetization, down to the bilayer limit. Given the versatility of van der Waals heterostructures, these coherent 2D magnons may be a basis for optically accessible spintronics, magnonics and quantum interconnects., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

CrSBr is an air-stable two-dimensional (2D) van der Waals semiconducting magnet with great technological promise, but its atomic-scale magnetic interactions-crucial information for high-frequency switching-are poorly understood. An experimental study is presented to determine the CrSBr magnetic exchange Hamiltonian and bulk magnon spectrum. The A-type antiferromagnetic order using single crystal neutron diffraction is confirmed here. The magnon dispersions are also measured using inelastic neutron scattering and rigorously fit the excitation modes to a spin wave model. The magnon spectrum is well described by an intra-plane ferromagnetic Heisenberg exchange model with seven nearest in-plane exchanges. This fitted exchange Hamiltonian enables theoretical predictions of CrSBr behavior: as one example, the fitted Hamiltonian is used to predict the presence of chiral magnon edge modes with a spin-orbit enhanced CrSBr heterostructure., (© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.)

Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. Here we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets., (© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)

Metal chalcophosphates, M 2 P 2 Q 6 (M = transition metals; Q = chalcogen), are notable among the van der Waals materials family for their potential magnetic ordering that can be tuned with an appropriate choice of the metal or chalcogen. However, there has not been a systematic investigation of the basic structural evolution in these systems with alloying of the crystal subunits due to the challenge in the diffusion process of mixing different metal cations in the octahedral sites of M 2 P 2 Q 6 materials. In this work, the P 2 S 5 flux method was used to enable the synthesis of a multilayered mixed metal thiophosphate Fe 2- x Co x P 2 S 6 ( x = 0, 0.25, 1, 1.75, and 2) system. Here, we studied the structural, vibrational, and electronic fingerprints of this mixed M 2 P 2 Q 6 system. Structural and elemental analyses indicate a homogeneous stoichiometry averaged through the sample over multiple layers of Fe 2- x Co x P 2 S 6 compounds. It was observed that there is a correlation between the intensity of specific phonon modes and the alloying concentration. The increasing Co alloying concentration shows direct relations to the in-plane [P 2 S 6 ] 4- and out-of-plane P-P dimer vibrations. Interestingly, an unusual nonlinear electronic structure dependence on the metal alloying ratio is found and confirmed by two distinct work functions within the Fe 2- x Co x P 2 S 6 system. We believe this work provides a fundamental structural framework for mixed metal thiophosphate systems, which may assist in future studies on electronic and magnetic applications of this emerging class of binary cation materials.

We report a reactive flux technique using the common reagent P 2 S 5 and metal precursors developed to circumvent the synthetic bottleneck for producing high-quality single- and mixed-metal two-dimensional (2D) thiophosphate materials. For the monometallic compound, M 2 P 2 S 6 (M = Ni, Fe, and Mn), phase-pure materials were quickly synthesized and annealed at 650 °C for 1 h. Crystals of dimensions of several millimeters were grown for some of the metal thiophosphates using optimized heating profiles. The homogeneity of the bimetallic thiophosphates MM'P 2 S 6 (M, M' = Ni, Fe, and Mn) was elucidated using energy-dispersive X-ray spectroscopy and Rietveld refinement. The quality of the selected materials was characterized by transmission electron microscopy and atomic force microscopy measurements. We report two novel bimetallic thiophosphates, MnCoP 2 S 6 and FeCoP 2 S 6 . The Ni 2 P 2 S 6 and MnNiP 2 S 6 flux reactions were monitored in situ using variable-temperature powder X-ray diffraction to understand the formation reaction pathways. The phases were directly formed in a single step at approximately 375 °C. The work functions of the semiconducting materials were determined and ranged from 5.28 to 5.72 eV.

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Highly efficient neutron detectors are critical in many sectors, including national security 1,2 , medicine 3 , crystallography 4 and astronomy 5 . The main neutron detection technologies currently used involve 3 He-gas-filled proportional counters 6 and light scintillators 7 for thermalized neutrons. Semiconductors could provide the next generation of neutron detectors because their advantages could make them competitive with or superior to existing detectors. In particular, solids with a high concentration of high-neutron-capture nuclides (such as 6 Li, 10 B) could be used to develop smaller detectors with high intrinsic efficiencies. However, no promising materials have been reported so far for the construction of direct-conversion semiconductor detectors. Here we report on the semiconductor LiInP 2 Se 6 and demonstrate its potential as a candidate material for the direct detection of thermal neutrons at room temperature. This compound has a good thermal-neutron-capture cross-section, a suitable bandgap (2.06 electronvolts) and a favourable electronic band structure for efficient electron charge transport. We used α particles from an 241 Am source as a proxy for the neutron-capture reaction and determined that the compact two-dimensional (2D) LiInP 2 Se 6 detectors resolved the full-energy peak with an energy resolution of 13.9 per cent. Direct neutron detection from a moderated Pu-Be source was achieved using 6 Li-enriched (95 per cent) LiInP 2 Se 6 detectors with full-peak resolution. We anticipate that these results will spark interest in this field and enable the replacement of 3 He counters by semiconductor-based neutron detectors.

The new compound NaCu 4 Se 4 forms by the reaction of CuO and Cu in a molten sodium polyselenide flux, with the existence of CuO being unexpectedly critical to its synthesis. It adopts a layered hexagonal structure (space group P6 3 / mmc with cell parameters a = 3.9931(6) Å and c = 25.167(5) Å), consisting of infinite two-dimensional [Cu 4 Se 4 ] - slabs separated by Na + cations. X-ray photoelectron spectroscopy suggests that NaCu 4 Se 4 is mixed-valent with the formula (Na + )(Cu + ) 4 (Se 2- )(Se - )(Se 2 ) 2- . NaCu 4 Se 4 is a p-type metal with a carrier density of ∼10 21 cm -3 and a high hole mobility of ∼808 cm 2 V -1 s -1 at 2 K based on electronic transport measurements. First-principles calculations suggest the density of states around the Fermi level are composed of Cu-d and Se-p orbitals. At 2 K, a very large transverse magnetoresistance of ∼1400% was observed, with a nonsaturating, linear dependence on field up to 9 T. Our results indicate that the use of metal oxide chemical precursors can open reaction paths to new low-dimensional compounds.