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In this paper, the mechanism of Dark‐Spot defect in thin film transistor liquid crystal display (TFT‐LCD) and its improvement measures are studied. The Dark‐Spot defect has a strong correlation with Polymer Film on Array (PFA) materials through stress analysis, and the defect can be reduced by a series of improvement we provided from PFA process adjusting and material formula optimizing. [ABSTRACT FROM AUTHOR]

This document is a technical paper titled "Investigation of Abnormal Degradation Behaviors under Negative Bias Stress in a-Si:H TFTs." It discusses the vulnerability of amorphous silicon thin-film transistors (TFTs) to long-term external excitations such as voltage bias stress, illumination, and temperature. The paper focuses on the effect of moisture environment on the stability degradation mechanism of back-channel-etch (BCE) structure a-Si:H TFTs. The authors discovered a distinct hump phenomenon in the TFTs after subjecting them to high temperature and humidity storage. They found that the accumulation of K+ ions near the back channel caused this hump effect, which was attributed to the presence of KOH molecules in the CF developer. The paper provides experimental results and references to support their findings. [Extracted from the article]

The article studied the 8K product in the black and white checkerboard test, because the 8K product Pixel design is reduced, the in‐plane circuit is increased, and there is a lateral electric field in the black and white area, which causes the ion to move and form a line afterimage. This article describes the adjustment The DBS voltage forms a vertical electric field in the middle of the pixel, which is similar to adding an example of a moving speed bump to prevent the lateral movement of ions, thereby improving the afterimage at the black and white junction. [ABSTRACT FROM AUTHOR]