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22 results on '"Cheynet, M.C."'

5. Investigation of low-k materials using EFTEM, Z-contrast imaging and low-loss spectroscopy

Author

Cheynet, M.C., Pokrant, S., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2007

6. Investigation de films minces d'HfO2 par HRTEM et EELS (poster)

Author

Cheynet, M.C., Pokrant, S., Tichelaar, F., Rouvière, J.L., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2007

7. Le mode STEM en TEM: combinaison des imageries SEM et TEM (oral invité)

Author

Cheynet, M.C., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2007

8. Low-loss spectroscopy for low-k dielectric analysis (oral)

Author

Cheynet, M.C., Pokrant, S., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2007

9. Le STEM: principe et applications

Author

Cheynet, M.C., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

10. Mesure locale de la composition chimique et du gap dans des couches nanométriques d'HfO2 par VEELS

Author

Cheynet, M.C., Pokrant, S., Tichelaar, F. D., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

11. Monitoring chemical composition and band gap at a sub-nanometer scale using valence electron scattering response in a high resolution FEG-TEM

Author

Cheynet, M.C., Pokrant, S., Tichelaar, F. D., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

12. Structural and optical properties of vapour-etching based porous silicon

Author

Kaabi, H., Mliki, N., Cheynet, M.C., Saikaly, W., Gilbert, O., Bessais, B., Yangui, B., Charai, A., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

13. Analysis of nanometer sized defects in advanced semiconductors devices by transmission electron microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS

Author

Pokrant, S., Pantel, R.C., Cheynet, M.C., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

14. Electron Energy Loss Spectroscopy: application to irradiation defects investigation in nuclear material

Author

Cheynet, M.C., Science et Ingénierie des Matériaux et Procédés (SIMaP), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, [CHIM.MATE]Chemical Sciences/Material chemistry
Published
2006

15. Structural and Chemical Analysis of a Si-SiO2 Interface using Spatially Resolved Electron Energy Loss Spectroscopy

Author

Cheynet, M.C., Epicier, Thierry, Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Mateis, Laboratoire

Subjects
[SPI.MAT] Engineering Sciences [physics]/Materials, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

International audience

Published
2004

16. Crystal structure and band gap determination of HfO2 thin films

Author

Cheynet, M.C. (author), Pokrant, S. (author), Tichelaar, F.D. (author), Rouvière, J.L. (author), Cheynet, M.C. (author), Pokrant, S. (author), Tichelaar, F.D. (author), and Rouvière, J.L. (author)

Abstract

Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by low-loss EELS analysis. The Eg values are then correlated with the crystal structure and the chemical properties of the films obtained by HRTEM images and VEELS line scans, respectively. They are discussed in comparison to both experimental and theoretical results published in literature. The HfO2 ALD film capped with poly-Si exhibits the largest band gap (Eg = 5.9±0.5?eV), as a consequence of its nanocrystallized orthorhombic structure. The large grains with a monoclinic structure formed in the HfO2 ALD film capped with Ge and the carbon contamination induced by the precursors in the HfO2 CVD film capped with Al2O3 are identified to be the main features responsible for lower band gap values (Eg = 5.25±0.5 and 4.3±0.5?eV respectively)., Kavli Institute of Nanoscience, Applied Sciences

Published
2007
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21. Structural and chemical analysis of a model Si-SiO 2 interface using spatially resolved electron-energy-loss spectroscopy.

Author

Cheynet, M.C. and Epicier, T.

Subjects
*SILICA, *ELECTRON energy loss spectroscopy, *ANALYTICAL chemistry, *SCANNING transmission electron microscopy, *DIELECTRICS, *ATOMS
Abstract

This work reports an experimental electron-energy-loss spectroscopy study carried out on a model thermal Si-SiO2 interface. Valence-loss spectra and core-loss spectra (Si L2,3 and O K edges) were recorded across the interface in line-spectrum mode with a high spatial resolution in a field emission gun scanning transmission electron microscope. From the analysis of the line spectra and on the basis of high-resolution electron microscopy and high-angle annular dark-field experiments, it is concluded that the interface is not sharp but extends over about three atomic planes consisting of Si and O atoms arranged in a structure evolving between crystalline SiO and SiO2 before growing as an amorphous SiO2 layer. In addition, from the analysis of the valence-loss spectra in terms of energy-loss function or dielectric function ε, we show that valence-electron-energyloss spectroscopy could be a relevant alternative method for determining the electron properties, for example the bandgap, and the dielectric constant of dielectric gates on a nanometre scale. [ABSTRACT FROM AUTHOR]

Published
2004
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