Search

Research was conducted to examine the thermal stability of Si/Si(1-x-y)Ge(sub x)C(sub y)/Si quantum wells grown by rapid thermal chemical vapor deposition. High resolution x-ray diffraction, defect etching and Fourier transform infrared spectroscopic studies were performed at various annealing temperatures. Results show that the Si(sub 1-x-y)Ge(sub x)C(sub y) layer with an initial thickness below the critical thickness shows misfit dislocation formation after annealing at 1000 degrees C for 2 h which may be due to the strain compensation decrease by SiC precipitates.

We have employed ferromagnetic resonance to obtain magnetic anisotropy information in a series of YIG/GGG superlattices and a single YIG thin film with temperature variations. The Curie temperature of these samples increases with the YIG layer thickness, reaching saturation beyond a specific YIG thickness. As temperature rises, the magnitude of the calculated magnetocrystalline anisotropy constant decreases while the uniaxial anisotropy constant exhibits growing behavior. [Copyright &y& Elsevier]

Reports that epitaxial layers of GaN[sub x]As[sub 1-x] were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia atmosphere. Existence of a threshold NH[sub 3] pressure indicated by high-resolution x-ray diffraction.

Describes the growth of epitaxial zinc selenide (ZnSe) films of high crystalline quality using pulse laser deposition (PLD). Pattern of the ZnSe films; Display of Kikuchi lines and bands by the pattern; Presence of free and bound excitons, donor-acceptor pairs by photoluminescence at 10 K of the films.

Examines the layer-by-layer deposition of La[sub 1.85]Sr[sub 0.15]CuO[sub x] thin films by pulsed laser ablation. Use of reflection high-energy electron diffraction to monitor the growth of the thin films; Combination of pulsed molecular oxygen with a continuous source of atomic oxygen; Oscillation of the intensity of the specular beam during the deposition.