Thermal stability of Si/Si(sub 1-x-y)Ge(sub x)C(sub y)/Si quantum wells grown by rapid thermal chemical vapor deposition

Research was conducted to examine the thermal stability of Si/Si(1-x-y)Ge(sub x)C(sub y)/Si quantum wells grown by rapid thermal chemical vapor deposition. High resolution x-ray diffraction, defect etching and Fourier transform infrared spectroscopic studies were performed at various annealing temperatures. Results show that the Si(sub 1-x-y)Ge(sub x)C(sub y) layer with an initial thickness below the critical thickness shows misfit dislocation formation after annealing at 1000 degrees C for 2 h which may be due to the strain compensation decrease by SiC precipitates.