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Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how to develop topological edge state-based computing devices. Recently, exploration and understanding of interfacial ferroelectricity in various van der Waals heterostructure material systems have received widespread attention among the community of materials science and condensed matter physics3-11. Such ferroelectric polarization emergent at the vdW interface can coexist with other quantum states and thus provides an unprecedented opportunity to electrically switch the topological edge states of interest, which is of crucial significance to the fault-tolerant electronic device applications based on the topological edge states. Here, we report the selective and quasi-continuous ferroelectric switching of topological Chern insulator devices and demonstrate its promising application in noise-immune neuromorphic computing. We fabricate this ferroelectric Chern insulator device by encapsulating magic-angle twisted bilayer graphene with doubly-aligned h-BN layers, and observe the coexistence of the interfacial ferroelectricity and the topological Chern insulating states. This ferroelectricity exhibits an anisotropic dependence on the in-plane magnetic field. By using a VBG pulse with delicately controlled amplitude, we realize the nonvolatile switching between any pair of Chern insulating states and achieve 1280 distinguishable nonvolatile resistance levels on a single device. Furthermore, we demonstrate deterministic switching between two arbitrary levels among the record-high number of nonvolatile resistance levels.

Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible dynamics in the single electronic device have been desired to implement the reservoir and the readout layer of reservoir computing system. Two-dimensional moire material, with an artificial lattice constant many times larger than the atomic length scale, is one type of most studied artificial quantum materials in community of material science and condensed-matter physics over the past years. These materials are featured with gate-tunable periodic potential and electronic correlation, thus varying the electric field allows the electrons in the moire potential per unit cell to exhibit distinct and reproducible dynamics, showing great promise in robust reservoir computing. Here, we report that a moire synaptic transistor can be used to implement the reservoir computing system with a homogeneous reservoir-readout architecture. The synaptic transistor is fabricated based on a h-BN/bilayer graphene/h-BN moire heterostructure, exhibiting ferroelectricity-like hysteretic gate voltage dependence of resistance. Varying the magnitude of the gate voltage enables the moire transistor to be switched between long-term memory and short-term memory with nonlinear dynamics. By employing the short- and long-term memory as the reservoir nodes and weights of the readout layer, respectively, we construct a full-moire physical neural network and demonstrate that the classification accuracy of 90.8% can be achieved for the MNIST handwritten digit database. Our work would pave the way towards the development of neuromorphic computing based on the moire materials.

The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing., Comment: Accepted by Science Advances

Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moir\'e heterostructures of van der Waals materials have been demonstrated as a highly tunable quantum platform for exploring fascinating strongly correlated quantum physics. Here, we report the observation of tunable quantum criticalities in an experimental simulator of extended Hubbard model with spin-valley isospins arising in chiral-stacked twisted double bilayer graphene. Scaling analysis shows a quantum two-stage criticality manifesting two distinct quantum critical points as the generalized Wigner crystal transits to a Fermi liquid by varying the displacement field, suggesting the emergence of a critical intermediate phase. The quantum two-stage criticality evolves into a quantum pseudo criticality as a high parallel magnetic field is applied. In such pseudo criticality, we find that the quantum critical scaling is only valid above a critical temperature, indicating a weak first-order QPT therein. Our results demonstrate a highly tunable solid-state simulator with intricate interplay of multiple degrees of freedom for exploring exotic quantum critical states and behaviors., Comment: https://www.nature.com/articles/s41586-022-05106-0

Moir\'e superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various correlated and topological phases, such as Mott insulators, unconventional uperconductivity and quantum anomalous Hall effect. Recently, the magic-angle twisted trilayer graphene (MATTG) has shown both robust superconductivity similar to magic-angle twisted bilayer graphene (MATBG) and other unique properties, including the Pauli-limit violating and re-entrant superconductivity. These rich properties are deeply rooted in its electronic structure under the influence of distinct moir\'e potential and mirror symmetry. Here, combining nanometer-scale spatially resolved angle-resolved photoemission spectroscopy (nano-ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we systematically measure the yet unexplored band structure of MATTG near charge neutrality. Our measurements reveal the coexistence of the distinct dispersive Dirac band with the emergent moir\'e flat band, showing nice agreement with the theoretical calculations. These results serve as a stepstone for further understanding of the unconventional superconductivity in MATTG., Comment: accepted by Advanced Materials