Back to Search
Start Over
Cascadable in-memory computing based on symmetric writing and read out
- Publication Year :
- 2022
-
Abstract
- The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting asymmetric write and read-out operations impose challenges in downscaling and direct cascadability of p-MTJ devices. Here, we propose that a new symmetric write and read-out mechanism can be realized in perpendicular-anisotropy spin-orbit (PASO) quantum materials based on Fe3GeTe2 and WTe2. We demonstrate that field-free and deterministic reversal of the perpendicular magnetization can be achieved by employing unconventional charge to z-spin conversion. The resulting magnetic state can be readily probed with its intrinsic inverse process, i.e., z-spin to charge conversion. Using the PASO quantum material as a fundamental building block, we implement the functionally complete set of logic-in-memory operations and a more complex nonvolatile half-adder logic function. Our work highlights the potential of PASO quantum materials for the development of scalable energy-efficient and ultrafast spintronic computing.<br />Comment: Accepted by Science Advances
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2211.06610
- Document Type :
- Working Paper