6 results on '"Chang, Qingyuan"'
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2. The electrical characteristic and trapping effect of AlGaN/GaN HEMTs with Fe and Fe/C co-doped GaN buffer layer.
3. Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate.
4. Record Power Performance of 33.1 W/mm with 62.9% PAE at X-band and 14.4 W/mm at Ka-band from AlGaN/GaN/AlN:Fe Heterostucture
5. The Improvement Breakdown Voltage of GaN on Si Pin Diode by Stepped Sidewall Treated with Fluorine Plasma
6. High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
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