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1. Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions

Author

Chailloux Thibault, Oge Sebastion, Tournier Dominique, Berthou Maxime, Ouaida Remy, and Brosselard Pierre

Subjects
Materials science, Silicon, business.industry, chemistry.chemical_element, Temperature measurement, chemistry.chemical_compound, Reliability (semiconductor), chemistry, Logic gate, MOSFET, Silicon carbide, Electronic engineering, Optoelectronics, business
Abstract

Commercial Silicon Carbide have been characterized under various configuration to assess their maturity and capability to replace their Silicon counterparts in 1.2kV converter applications. Static and dynamic characterization were performed between 80 and 525K. Reliability of the devices have been tested at high temperatures. Finally critical and repetitve short-circuit capability have been measured.

Published
2015
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