Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions

Authors :: Chailloux Thibault
Oge Sebastion
Tournier Dominique
Berthou Maxime
Ouaida Remy
Brosselard Pierre
Source :: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
Publication Year :: 2015
Publisher :: IEEE, 2015.
Abstract: Commercial Silicon Carbide have been characterized under various configuration to assess their maturity and capability to replace their Silicon counterparts in 1.2kV converter applications. Static and dynamic characterization were performed between 80 and 525K. Reliability of the devices have been tested at high temperatures. Finally critical and repetitve short-circuit capability have been measured.

Subjects :: Materials science
Silicon
business.industry
chemistry.chemical_element
Temperature measurement
chemistry.chemical_compound
Reliability (semiconductor)
chemistry
Logic gate
MOSFET
Silicon carbide
Electronic engineering
Optoelectronics
business

Database :: OpenAIRE
Journal :: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)
Accession number :: edsair.doi...........f8398913e48dffea559fbbd2666bf483
Full Text :: https://doi.org/10.1109/epe.2015.7309455

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