1. Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces
- Author
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Drera, Giovanni, Banfi, Francesco, Canova, Ff, Borghetti, P, Sangaletti, Luigi Ermenegildo, Bondino, F, Magnano, E, Huijben, J, Huijben, M, Rijnders, G, Blank, Dha, Hilgenkamp, H, Brinkman, A., Drera, Giovanni (ORCID:0000-0002-3871-9227), Banfi, Francesco (ORCID:0000-0002-7465-8417), Sangaletti, Luigi Ermenegildo (ORCID:0000-0001-9312-5862), Drera, Giovanni, Banfi, Francesco, Canova, Ff, Borghetti, P, Sangaletti, Luigi Ermenegildo, Bondino, F, Magnano, E, Huijben, J, Huijben, M, Rijnders, G, Blank, Dha, Hilgenkamp, H, Brinkman, A., Drera, Giovanni (ORCID:0000-0002-3871-9227), Banfi, Francesco (ORCID:0000-0002-7465-8417), and Sangaletti, Luigi Ermenegildo (ORCID:0000-0001-9312-5862)
- Abstract
Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.
- Published
- 2011