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Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces

Authors :
Drera, Giovanni
Banfi, Francesco
Canova, Ff
Borghetti, P
Sangaletti, Luigi Ermenegildo
Bondino, F
Magnano, E
Huijben, J
Huijben, M
Rijnders, G
Blank, Dha
Hilgenkamp, H
Brinkman, A.
Drera, Giovanni (ORCID:0000-0002-3871-9227)
Banfi, Francesco (ORCID:0000-0002-7465-8417)
Sangaletti, Luigi Ermenegildo (ORCID:0000-0001-9312-5862)
Drera, Giovanni
Banfi, Francesco
Canova, Ff
Borghetti, P
Sangaletti, Luigi Ermenegildo
Bondino, F
Magnano, E
Huijben, J
Huijben, M
Rijnders, G
Blank, Dha
Hilgenkamp, H
Brinkman, A.
Drera, Giovanni (ORCID:0000-0002-3871-9227)
Banfi, Francesco (ORCID:0000-0002-7465-8417)
Sangaletti, Luigi Ermenegildo (ORCID:0000-0001-9312-5862)
Publication Year :
2011

Abstract

Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1105002368
Document Type :
Electronic Resource