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Your search keyword '"Cai, Xiaowu"' showing total 109 results
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109 results on '"Cai, Xiaowu"'

1. On the Performance of Destructive Bond Strength Tests in Wedge Welding Stability

Author

Zhou, Jingnan, Wang, Ke, Li, Jing, Gao, Jiantou, Sun, Peng, Cai, Xiaowu, Zhao, Fazhan, Han, Zhengsheng, Chaari, Fakher, Series Editor, Gherardini, Francesco, Series Editor, Ivanov, Vitalii, Series Editor, Haddar, Mohamed, Series Editor, Cavas-Martínez, Francisco, Editorial Board Member, di Mare, Francesca, Editorial Board Member, Kwon, Young W., Editorial Board Member, Tolio, Tullio A. M., Editorial Board Member, Trojanowska, Justyna, Editorial Board Member, Schmitt, Robert, Editorial Board Member, Xu, Jinyang, Editorial Board Member, and Mo, John P. T., editor

Published
2024
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17. A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC

Author

Lu, Yu, Cai, Xiaowu, Lu, Jian, Pan, Longli, Dang, Jianying, Xie, Yafei, Wang, Xupeng, and Li, Bo

Abstract

In digital integrated circuits with multiple power domains, level shifters (LSs) are essential circuit elements that can transform the voltage region from low to high. However, high-frequency gate drivers can generate hundreds of voltages per nanosecond noise (high dV/dt noise). Such high dV/dt noise can cause malfunction of a conventional pulse-triggered cross-coupled LS (CCLS) that is used to control the high-side nMOS switch. In this article, a novel LS with noise immunity is proposed and investigated. Compared with the conventional resistor load LS, the proposed circuit adopts nMOS-R cross-coupled (NRCC) LS, and realizes the selective filtering ability by exploiting the path that filters out the noise introduced by the dV/dt. The high-voltage gate drive integrated circuit (HVIC) is implemented using a 600 V silicon-on-insulator (SOI) BCD process. Analyses and experiments show that the proposed design can help the HVIC maintain a high common-mode transient immunity (CMTI) of up to 137 V/ns while allowing a negative VS swing down to -9.4 V under a 15 V supply voltage. Compared with the traditional HVIC with resistance load LS, the proposed novel HVIC with the NRCC LS improves the noise immunity of dV/dt by 182%.

Published
2024
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18. A Novel Radiation-Hardened Level Shifter With dV/dt Noise Immunity for 600-V HVIC

Author

Lu, Yu, Cai, Xiaowu, Dang, Jianying, Wang, Xupeng, and Li, Bo

Abstract

This article investigates the degradation mechanism in dV/dt noise immunity robustness of traditional resistive load level shifters (LSs) under total-ionizing-dose (TID) irradiation and proposes a novel radiation-hardened nMOS-R cross-coupled (NRCC) LS with dV/dt noise immunity. When TID irradiation induces threshold voltage drift and increases the off-state leakage current in power devices, the proposed circuit employs a differential and complementary structure to counteract the degradation of electrical performance in both branches caused by the TID irradiation, thereby achieving improved radiation-hardening performance. Measurement results demonstrate that the proposed high-voltage gate drive integrated circuit (HVIC) with the novel LS level exhibits 130-V/ns noise immunity at the irradiation dose of 100 krad(Si). A normalization method is used to process measurement results for visual comparison. The degradation of dV/dt noise immunity capability of the proposed LS is improved by 26.8%, 72.4%, and 94.9% compared with the traditional LS at the irradiation dose of 30, 50, and 100 krad(Si). The HVIC is implemented using a 600-V silicon-on-insulator (SOI) BCD process.

Published
2024
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30. A Radiation-Hardened Overtemperature Protection Circuit Using a Dynamic Comparison Technique

Author

Dang, Jianying, Cai, Xiaowu, Xie, Yafei, Wang, Xupeng, Lu, Yu, Wang, Shiping, and Li, Bo

Abstract

The total-ionizing-dose (TID) effect has different influences on bipolar junction transistors (BJTs), resistors, and MOSFETs, which leads to significant drifts in the overtemperature threshold in the traditional overtemperature protection circuit (OTPC). An OTPC with a dynamic comparison technique is proposed to improve the radiation-hardened capability. The proposed radiation-hardened OTPC employs two identical sensors to monitor the temperature and convert it into voltage for comparison to determine if overtemperature occurs. The voltage drifts caused by TID effects on two sensors vary dynamically and offset each other, so the overtemperature threshold will not drift theoretically. The normalization method is used to process measurement results to get a visual comparison. The measurement results show that the threshold drift of the proposed OTPC is 5.0% lower than that of traditional OTPC at 30 krad(Si), 7.1% lower at 50 krad(Si), and 10.3% lower at 100 krad(Si). Therefore, the proposed OTPC reduces the threshold voltage drifts effectively and has a good radiation-hardened effect.

Published
2024
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38. Evolution and Mechanism of P-GaN Films Under Proton Irradiation and Its Influence on Electronic Device.

Author

Tang, Yun, Wang, Lei, Zhu, Huiping, Cai, Xiaowu, Zhang, Xuewen, Gao, Jiantou, Liu, Ningyang, Li, Xingji, Yang, Jianqun, Zhao, Fazhan, and Li, Bo

Subjects
ELECTRONIC equipment, SCHOTTKY barrier diodes, PIN diodes, CHARGE carrier mobility, CARRIER density, PROTONS, IRRADIATION
Abstract

Electrical and optical properties deterioration of P-GaN films under 150 keV proton irradiation were investigated. Through the Hall measurement method, as the irradiation fluence increasing, the carrier concentration of P-GaN films decreases from 1.23 $\times \,\,10^{{17}}$ to $-8.24\,\,\times \,\,10^{{16}}$ cm−3, and the carrier mobility change from 5.64 to 295.84 cm2/V/s. And through the circular transmission line model method, the sheet resistance and specific contact resistance for P-GaN films increased first and then decreased slightly under the proton irradiation. Radiation-induced $\text{V}_{\mathrm {N}}$ , $\text{Ga}_{\mathrm {i}}$ , $\text{V}_{\mathrm {Ga}}$ , and $\text{N}_{\mathrm {i}}$ were found to be responsible for the degradation of P-GaN films. It was confirmed that P-GaN has been transformed into N-GaN under the fluence of 1 $\times \,\,10^{15}$ p/cm2. The optical properties of the P-GaN films were characterized by examining changes in the photoluminescence spectrum. In addition, the electrical characteristics of Schottky barrier diode (SBD) and p-i-n diodes with the same structure (except for 0.5 $\mu \text{m}$ P-GaN of p-i-n diode) were used to study the effect of P-GaN degradation on electronic device performance. When P-GaN was transformed into N-GaN, p-i-n diodes lost the electrical characteristics of the p-n junction and the ${I}$ – ${V}$ curves of p-i-n diode are similar to that with SBD. [ABSTRACT FROM AUTHOR]

Published
2022
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39. A low leakage current Tunneling-FET based on SOI

Author

Li Duoli, Jiajun Luo, Jianhui Bu, Cai Xiaowu, Gaobo Xu, Zhengsheng Han, and Yong Kuang

Subjects
010302 applied physics, Materials science, business.industry, Doping, Silicon on insulator, Low leakage, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ion, Logic gate, 0103 physical sciences, MOSFET, Optoelectronics, Current (fluid), 0210 nano-technology, business, Quantum tunnelling
Abstract

In this paper, we present a new structure of Tunneling-FET(TFET) based on SOI to reduce the leakage current. A thin oxide is inserted in the interface of Drain and Bulk near the gate-oxide side. The thin oxide eliminated the tunneling current between Drain and Bulk completely. This new TFET shows a superior performance with lower leakage current (1.1e-14 A/um) and larger ION/IOFF ratio $( 3 \times 10^{8})$.

Published
2018
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47. Analysis of the area efficient transmission gate power clamp in 65nm CMOS process

Author

Gao Zhe, Liang Chao, Lv Chuan, Yan Ming, Lv Kai, Cai Xiaowu, and Wei Jun-xiu

Subjects
010302 applied physics, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, Electrical engineering, Time constant, 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, law.invention, Capacitor, Clamp, CMOS, Transmission gate, law, Logic gate, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Timer, business, Hardware_LOGICDESIGN, Leakage (electronics)
Abstract

an area efficient clamp is presented and validated in 65nm low leakage CMOS process. With this novel design, only a very short time constant RC timer is required for triggering and keeping the clamp turning on for shunting the ESD current. And the leakage is greatly reduced in normal operation because of the small capacitor. Robust ESD protection capability and no risk of power on mis-triggering problems are also studied in the paper.

Published
2016
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48. Stabilization criterion of fractional-order PDμcontrollers for interval fractional-order plants with one fractional-order term

Author

Liu Ting, Lirong Zhai, Cai Xiaowu, and Gao Zhe

Subjects
Characteristic function (convex analysis), 0209 industrial biotechnology, 020208 electrical & electronic engineering, Zero (complex analysis), 02 engineering and technology, Function (mathematics), Interval (mathematics), Minkowski addition, Vertex (geometry), Term (time), 020901 industrial engineering & automation, Control theory, 0202 electrical engineering, electronic engineering, information engineering, Order (group theory), Mathematics
Abstract

This study proposes a stabilization criterion of fractional-order PDμ controllers for interval fractional-order plants with one fractional-order term. By the Minkowski sum method, the value set of the disturbance function is determined by dividing the characteristic function of the closed loop system into the nominal function and disturbance function. The calculation approach of vertices and edges of the value set in term of a characteristic function are provided to avoid the calculation of redundant vertices. The switching frequencies are offered to determined the shape of value set with the increase of the frequency. Moreover, the finite test frequency interval is offered. By supposing that the vertex functions are not equal to zero and the closed loop nominal system is stable, the sufficient and necessary condition of stabilization criterion of fractional-order PDμ controllers are given. Finally, the stabilization problems of the numerical examples are analyzed to verify the effectiveness of the proposed stabilization criterion.

Published
2016
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