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Very recently, new LEED, STM and ARPES measurements on the (1/3)ML K/Si(1 1 1):B interface have shed the light on the role of phonons and force to reconsider the nature of the ground state, formerly proposed to be a Mott insulator. In this paper, we present simulations of the one-electron spectral function A ( E ) . These are based on the atomic Holstein–Hubbard model, which is relevant in the strong electron–phonon coupling limit. The exact spectral function has been analysed carefully with special attention on the gap behaviour as a function of the on-site repulsion. We show that the spectral funcion is the same for opposite values of the effective on-site repulsion. The observed reconstruction favours the negative- U e f f case, which corresponds to a bipolaronic charge-ordered ground state. Finally, the ARPES lineshape is reproduced correctly with fitting parameters in agreement with the literature.

Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for developing spintronics devices because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need to study the spin texture of strongly spin-orbit-coupled materials has recently promoted circular dichroic angular resolved photoelectron spectroscopy (CD-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon-energy-dependent study of the CD-ARPES spectra in BiTeX (X = I, Br, Cl). Our work reveals a large variation in the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon-energy dependence for the CD-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave functions involved in the photoemission process. This phase difference can be due to initial- or final-state effects. In the former case the phase difference results in possible interference effects among the photoelectrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions., 5 pages, 4 figures

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T-CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T-CDW.

Équipe 102 : Surfaces et Spectroscopies; International audience; Boron vacancies at the Si( 111):B-root 3 surface are model systems in the comprehension of strongly correlated semiconductor surfaces. By using scanning tunneling spectroscopy, the origin of the single-vacancy electronic structure is addressed. It is shown to originate from the localization of a well-identified dangling-bond surface state with significant B character. The bivacancy defect, which is characterized by energy-split bonding and antibonding states, is interpreted within the textbook diatomic molecule picture. From the hopping parameter, we determine the bandwidth of the surface state from which the impurity state derives and evaluate the strength of many-body effects. Our analysis supports the realization of the Mott-Hubbard insulator state in half-filled dangling-bond surface states on root 3-reconstructed surfaces, as proposed recently for SiC(0001), Sn/Ge(111), and Sn/Si(111)

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination. In both cases it intersects spin-polarized bands, in the corresponding surface depletion and accumulation layers. The momentum splitting of these bands is not affected by adsorbate-induced changes in the surface potential. These findings demonstrate that two properties crucial for enabling semiconductor-based spin electronics -- a large, robust spin splitting and ambipolar conduction -- are present in this material., 4 pages, 3 figures

From scanning tunneling spectroscopy measurements, we recently found evidence for the effect of electron-phonon interactions on the lifetime of hot electrons and holes. This information was obtained by measuring the linewidth of quantum well states resulting from the confinement of Shockley states in truncated hexagonal Ag nanopyramids. In the present paper, we show that a careful analysis allows us to obtain both the intrinsic and extrinsic broadening contributions. This latter contribution results from the lossy boundary scattering which is strongly reduced in this peculiar geometry. Indeed, we deduce the energy dependence of the reflection coefficient which remains higher, as usually observed in nanostructures like adatom islands and quantum corrals.

Ab initio density-functional theory calculations, photoemission spectroscopy (PES), scanning tunneling microscopy, and spectroscopy (STM, STS) have been used to solve the 2√3 x 2√3R30 surface reconstruction observed previously by LEED on 0.5 ML K/Si:B. A large K-induced vertical lattice relaxation occurring only for 3/4 of Si adatoms is shown to quantitatively explain both the chemical shift of 1.14 eV and the ratio 1/3 measured on the two distinct B 1s core levels. A gap is observed between valence and conduction surface bands by ARPES and STS which is shown to have mainly a Si-B character. Finally, the calculated STM images agree with our experimental results. This work solves the controversy about the origin of the insulating ground state of alkali-metal/Si(111):B semiconducting interfaces which were believed previously to be related to many-body effects, This work has received the financial support of the French ANR SURMOTT program (ANR-09-BLAN- 0210-01) and the Spanish MICIIN under Project No. FIS2010-16046

In this paper, we present a systematic study of the structural and electronic properties of the alkali/Si(111):B interface, combining low-energy electron diffraction and (angle-resolved) photoemission spectroscopy. We show that potassium (K), rubidium (Rb), and caesium (Cs) ultrathin films, including solid solutions K-Rb, share the same physics. First of all, the $2\sqrt{3}\ifmmode\times\else\texttimes\fi{}2\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ surface reconstruction, evidenced only very recently using potassium is shown to be a common feature at the saturation coverage. A $3\ifmmode\times\else\texttimes\fi{}3$ reconstruction is also observed for coverages just below saturation. From an electronic point of view, the band features found with K are generalized. As a distinct point, we evidence that the surface state is constituted by two subbands which have the reconstruction symmetry. At low temperature (55 K), a systematic shift of the surface state toward higher binding energies is observed together with a reduction of its linewidth. A close inspection of the data reveals fine, systematic effects depending on the alkali. Indeed as substituting from K to Cs, the surface-state binding energy is reduced continuously whereas the bandwidth increases. K differs from Rb and Cs, by a smaller reduction of the linewidth and a higher energy shift upon cooling. These features are interpreted consistently within the bipolaron model, which was invoked previously to explain the insulating nature of the K/Si:B surface state. Polaronic effects are shown to be enhanced with K, as already demonstrated on alkali/GaAs(110) interfaces.

We present a scanning tunneling microscopy investigation of the dynamics of hot electrons and holes in Ag pyramidal nanostructures. The geometry of the nanostructure leads to a strong reduction of the decay mechanism into the bulk states and then to a large reflection coefficient of the surface electronic waves. Therefore, in contrast to quantum corrals and adatom islands which show a dominant lossy scattering contribution to the linewidth, the narrow observed structures in the differential conductivity spectra reveal the expected linewidth minimum at the Fermi energy. The electron-phonon contribution to the lifetime is shown to be dominant, in agreement with previous photoemission measurements.

Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important candidates for developing spintronics devices because of the coexistence of spin-split bulk and surface states, along with the ambipolar character of the surface charge carriers. The need to study the spin texture of strongly spin-orbit-coupled materials has recently promoted circular dichroic angular resolved photoelectron spectroscopy (CD-ARPES) as an indirect tool to measure the spin and the angular degrees of freedom. Here we report a detailed photon-energy-dependent study of the CD-ARPES spectra in BiTeX (X = I, Br, Cl). Our work reveals a large variation in the magnitude and sign of the dichroism. Interestingly, we find that the dichroic signal modulates differently for the three compounds and for the different spin-split states. These findings show a momentum and photon-energy dependence for the CD-ARPES signals in the bulk Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our experiment indicates the important relation between the modulation of the dichroism and the phase differences between the wave functions involved in the photoemission process. This phase difference can be due to initial- or final-state effects. In the former case the phase difference results in possible interference effects among the photoelectrons emitted from different atomic layers and characterized by entangled spin-orbital polarized bands. In the latter case the phase difference results from the relative phases of the expansion of the final state in different outgoing partial waves.

We report on the structural and electronic properties of the Bi/Au(110)-1 x 4 surface, by combining scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and first-principles calculations. The analysis of the precursor 1 x 8 moire structure shows that the 1 x 4 reconstruction forms at an optimum coverage of one monolayer. A hard-sphere model is proposed for the 1 x 4 structure and further confirmed by calculations. In this model, topmost Bi atoms form rows supported by a Bi overlayer, with no significant alloying with the substrate. This has important consequences regarding the electronic properties and the spin texture. The photoemission measurements evidence typical p Bi-induced states, that can have either quasi-one-or two-dimensional character depending on their binding energy. These states show no Rashba spin splitting, in agreement with the results of first-principles calculations. This finding is discussed by considering the role of hybridization with the substrate in the emergence of the Rashba effect.