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Electronic instability in a zero-gap semiconductor: the charge-density wave in (TaSe4)2I.

Authors :
Tournier-Colletta C
Moreschini L
Autès G
Moser S
Crepaldi A
Berger H
Walter AL
Kim KS
Bostwick A
Monceau P
Rotenberg E
Yazyev OV
Grioni M
Source :
Physical review letters [Phys Rev Lett] 2013 Jun 07; Vol. 110 (23), pp. 236401. Date of Electronic Publication: 2013 Jun 04.
Publication Year :
2013

Abstract

We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe(4))(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T(CDW)=263  K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T(CDW).

Details

Language :
English
ISSN :
1079-7114
Volume :
110
Issue :
23
Database :
MEDLINE
Journal :
Physical review letters
Publication Type :
Academic Journal
Accession number :
25167517
Full Text :
https://doi.org/10.1103/PhysRevLett.110.236401