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Electronic instability in a zero-gap semiconductor: the charge-density wave in (TaSe4)2I.
- Source :
-
Physical review letters [Phys Rev Lett] 2013 Jun 07; Vol. 110 (23), pp. 236401. Date of Electronic Publication: 2013 Jun 04. - Publication Year :
- 2013
-
Abstract
- We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe(4))(2)I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the nondistorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the charge-density wave formation below T(CDW)=263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T(CDW).
Details
- Language :
- English
- ISSN :
- 1079-7114
- Volume :
- 110
- Issue :
- 23
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 25167517
- Full Text :
- https://doi.org/10.1103/PhysRevLett.110.236401