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12 results on '"Burk, D. E."'

1. Anomalous electron-beam-induced-current collection in denuded-zone-treated low-doped silicon.

Author

Burk, D. E. and Chung, B.-C.

Subjects
*ELECTRON beams, *METAL oxide semiconductor field-effect transistors
Abstract

Focuses on a study which proposed the collection of electron-beam-induced current for denuded-zone-treated π-silicon by a parasitic metal-oxide-semiconductor field-effect transistor (MOSFET). Description of the MOSFET channel, chain and source; Details of the experimental design; Results and discussion.

Published
1989
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5. Fabrication of OSOS cells by neutral ion beam sputtering

Author

Burk, D. E, Dubow, J. B, and Sites, J. R

Subjects
Energy Production And Conversion
Abstract

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Published
1976

6. Ion-beam sputtering increases solar-cell efficiency

Author

Burk, D. E, Dubow, J. B, and Sites, R. R

Subjects
Fabrication Technology
Abstract

Ion-beam sputtering, fabrication of oxide-semiconductor-on-silicon (OSOS) solar cells, results in cells of 12% efficiency. Ion-beam sputtering technique is compatible with low-cost continuous fabrication and requires no high-temperature processing.

Published
1977

7. Efficient photovoltaic heterojunctions of indium tin oxides on silicon

Author

Dubow, J. B, Sites, J. R, and Burk, D. E

Subjects
Solid-State Physics
Abstract

Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60

Published
1976
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10. Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation.

Author

Brady, F. T., Li, S. S., Burk, D. E., and Krull, W. A.

Subjects
OXIDES, METAL oxide semiconductors
Abstract

Capacitance-voltage measurements were used to analyze buried oxide layers formed by the implantation of oxygen into silicon substrates. The analysis is based on the extension of conventional metal/oxide/semiconductor capacitor theory to the two buried oxide interfaces of the epilayer/oxide/substrate structure. The processing parameters include oxygen doses of 1.8 or 2.0×1018 cm-2, implant temperature of 500 °C, and anneal temperature of 1250 °C for 2 or 16 h. The results are fixed oxide charge densities of 2–3×1011 and 1–2×1010 cm-2 for the epi/oxide and substrate/oxide interfaces, respectively; interface trap densities are 0.5 to 2×1011 cm-2 eV-1 for the epi/oxide interface, and not measurable for the substrate/oxide interface. The epilayer/oxide interface was found to be more sensitive to processing variations than the substrate/oxide interface. [ABSTRACT FROM AUTHOR]

Published
1988
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