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A full-wafer, 10,580 $\times$ 10,560 pixel (95 $\times$ 95 mm) CCD was designed and tested at Semiconductor Technology Associates (STA) with 9 um square pixels and 16 outputs. The chip was successfully fabricated in 2006 at DALSA and some performance results are presented here. This program was funded by the Office of Naval Research through a Small Business Innovation in Research (SBIR) program requested by the U.S. Naval Observatory for its next generation astrometric sky survey programs. Using Leach electronics, low read-noise output of the 111 million pixels requires 16 seconds at 0.9 MHz. Alternative electronics developed at STA allow readout at 20 MHz. Some modifications of the design to include anti-blooming features, a larger number of outputs, and use of p-channel material for space applications are discussed., Comment: 8 pages, 5 figures, accepted for SPIE conference 6690

This paper reports on two new advancements in CCD technology. The first area of development has produced a special purpose CCD designed for ultra low-signal level imaging and spectroscopy applications that require sub-electron read noise floors. A nondestructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are reported. The second development involves the design and performance of a high resolution imager of 4096 x 4096 pixels, the largest CCD manufactured in terms of pixel count. The device utilizes a 7.5-micron pixel fabricated with three-level poly-silicon to achieve high yield.

A charge coupled device designed for celestial spectroscopy has achieved readout noise as low as 0.6 electrons rms. A nondestructive output circuit was operated in a special manner to read a single pixel multiple times. Off-chip electronics averaged the multiple values, reducing the random noise by the square root of the number of readouts. Charge capacity was measured to be 500,000 electrons. The device format is 1600 pixels horizontal by 64 pixels vertical. Pixel size is 28 microns square. Two output circuits are located at opposite ends of the 1600 bit CCD register. The device was thinned and operated backside illuminated at -110 degrees C. Output circuit design, layout, and operation are described. Presented data includes the photon transfer curve, noise histograms, and bar-target images down to 3 electrons signal. The test electronics are described, and future improvements are discussed.

A development status evaluation is presented for proprietary UV-range CCDs for military and scientific applications requiring pixel sizes in the 18-micron range. The most recent developments in UV/X-ray responsive detectors have their bases in the backside illumination of multipinned phase (MPP) 1024 x 1024 CCD arrays, as well as in the initial exploration of open-pinned phase (OPP) techniques. The frontside performance of both MPP and OPP devices is noted to be excellent as well, and pinouts and mounting techniques have been defined which allow easy front-back operation comparisons. Novel backside processing techniques are being refined.

Recent developments of scientific CCDs have produced sensors that achieve ultra low read noise performance (less than 2 electrons rms) and near perfect charge transfer efficiency (0.9999996) without the addition of a fat-zero. This progress has now made it possible to achieve Fano-noise-limited performance in the soft X-ray where the detector's energy resolution is primarily limited by the statistical variation in the charge generated by the interacting X-ray photon. In this paper, Fano-noise-limited test data is presented for two different CCD types and a CCD derived estimate of the Fano factor is determined. By evaluating ultra low-modulation images (less than 1 electron peak-to-peak) it is shown that the CCD's global CTE is now superior to its read noise floor. To capitalize on this capability CCD manufacturers are now focusing their attention on reducing the noise floor below the 1 electron level thereby matching the sensor's CTE performance. This improvement, if accomplished, will push Fano-noise-limited performance for the CCD into the extreme ultra-violet.