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Boron penetration through 5 nm to 8 nm gate dielectrics grown in O2 or N2O via RTO increases exponentially with decreasing oxide thickness. A physical model describes the thickness dependence observed for boron penetration. The model enables prediction of the minimum oxide thickness required to inhibit boron penetration. The significance of boron-induced threshold voltage variation in ULSI technologies is studied.

The nitrogen processing of ultrathin oxynitride gate dielectrics has been demonstrated to be a promising technique for producing thin films. The resulting dielectric film has a nitrogen layer at the SiO2/polysilicon interface to prevent boron diffusion from the gate and another layer at the Si/SiO2 interface to increase the hot electron degradation resistance. The novel method also uses standard thermal oxidation in O2 and NO in typical furnaces used for gate oxide manufacturing.

High resolution medium energy ion scattering was employed in examining the thermal oxynitridation of Si(100) grown thermally in nitric oxide. The approach accurately determined both the composition and even nitrogen depth distribution of the ultrathin films. The rise of oxynitridation temperature was also found to increase the ratio of nitrogen to oxygen and the total amount of nitrogen in the film.

Presents a study that grew thin films of amorphous/polycrystalline titanium layers alternating with amorphous silicon on room temperature silicon substrates by electron beam evaporation. Cross-section transmission electron microscopy of the films; Formation of ultrathin superlattice layers with noncumulative roughening; Dependence of the crystallinity of the layers containing titanium on the layer thickness.

Shows that a growth on a vicinal plane has an effect on the microstructure of the thin film and sets geometric limits in pseudomorphic growth. Effect of the miscut on the germanium (Ge)-rich alloy films; Insight into the formation and growth of superlattices; Results of the angular scans of several Ge-silicon films.

Deals with a study which investigated the mechanism and crystallinity of excimer laser-induced deposition of indium phosphide. Information on excimer laser; Methodology of the study; Results and discussion.

An energy transfer from 5D3 and 5D4 levels of Tb3+ to 2D3/2 state of Ce3+ in Ce3+:Tb3+:YAG was studied using time resolved spectroscopy. It was found that the transfer from the Tb3+(5D3) level proceeds via (d–d) interaction and the critical distance is 18 Å. The transfer from Tb3+(5D4) state was consistent with the (d–d) interaction and with the critical distance of 15.4 Å, but could also be described in the framework of (d–q) interaction. [ABSTRACT FROM AUTHOR]

Focuses on the properties of Si-Ge films grown by rapid thermal chemical deposition. Determination of the oxygen contents of the films; Characteristics of the films; Benefits from low temperature deposition.

Investigates the growth of gallium arsenide (GaAs) thin films by a laser photodecomposition process. Use of infrared lasers in the deposition of GaAs; Factors in the determination of the actual average substrate temperature; Refractive indices for films deposited on silicon.

Presents a study which analyzed dislocation reduction by impurity hardening in the liquid-encapsulated Czochralski growth of InP. Method of the study; Results and discussion; Conclusion.

Focuses on a study which measured the root-mean-square width of the buried crystalline/amorphous silicon(001)/silicon oxide[sub2] interface. Properties of metal-oxide semiconductor devices; Reverse correlation of interface width and oxide thickness; Difference between the rate of smoothing for wet and dry oxides.

Reports the results of homoepitaxial silicon films deposition by rapid thermal chemical vapor deposition (RTCVD). Description of the RTCVD film growth technique; Importance of low base pressure to interfacial cleanliness; Applications for RTCVD; Discussion of results.