Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C.

Authors :: Green, M. L.
Weir, B. E.
Brasen, D.
Hsieh, Y. F.
Higashi, G.
Feygenson, A.
Feldman, L. C.
Headrick, R. L.
Source :: Journal of Applied Physics; 1/15/1991, Vol. 69 Issue 2, p745, 7p, 2 Black and White Photographs, 1 Chart, 6 Graphs
Publication Year :: 1991
Abstract: Focuses on the properties of Si-Ge films grown by rapid thermal chemical deposition. Determination of the oxygen contents of the films; Characteristics of the films; Benefits from low temperature deposition.

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