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The optical performance and relevant physical properties of near-ultraviolet (NUV) GaN-based light-emitting diodes (LEDs) are investigated. Specifically, the influence of traditional AlGaN bulk electron blocking layer (EBL) and AlGaN/GaN superlattice (SL) EBL with various thicknesses of AlGaN layers on NUV LEDs is explored. It is indicated from the band diagrams, electrostatic field profile, electron reflecting and hole transmitting spectra, and carrier concentrations profile that the use of a thin AlGaN layer of AlGaN/GaN SL EBL is beneficial to the electron confinement and hole injection in the active region, which results in the high internal quantum efficiency and low efficiency droop at high injection current. Moreover, the experimental results show that replacing the traditional AlGaN bulk EBL with the AlGaN/GaN SL EBL can markedly improve the optical performance. When compared with the NUV LED with traditional AlGaN bulk EBL, the output power of the NUV LED with the proposed AlGaN/GaN SL EBL increases from 13.5 to 48.7 mW at 100 mA.

The effect of polarization-matched AlInGaN/AlGaN superlattice (SL) electron blocking layer (EBL) on the physical characteristics of blue InGaN light-emitting diodes (LEDs) is investigated numerically. Simulation results show that the optical performance of the LEDs with polarization-matched SL EBL can be markedly improved due to the effectively suppressed polarization effect, enhanced hole injection efficiency, and reduced electron overflow. Comparing to the LEDs with conventional AlGaN EBL, an improvement of 53% in light output power is achieved for the proposed LED structure.

In this letter, an innovative fabrication method for InGaN-based light-emitting diode (LED) was proposed, and the produced optical device was called the wafer-level InGaN-based thin-film flip-chip LEDs (wTFFC-LEDs). Packaging technologies, such as wafer-to-wafer bonding, laser lift-off, textured surface, and interconnection techniques, were applied to complete the device. Through this architecture, the absorption caused by electrodes in traditional vertical injection LEDs (V-LEDs) can be minimized, as well as the light extraction efficiency can be improved. Light-output power of wTFFC-LEDs (350 mA) was increased by 36.5% and 17.2% compared with the V-LEDs and flip-chip LEDs. Furthermore, the external quantum efficiency was also relatively enhanced by 36.3% and 15.5% higher than those of reference devices.

In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the UV-LEDs with sputtered AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the scanning electron microscope (SEM) and transmission electron microscopy (TEM) images, it can be observed that the tip and sidewall portion of the pattern was smooth using the sputtered AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 6×10 7 cm −2 to 2.5×10 7 cm −2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence (PL) measurement and numerical simulation confirm that this increase of output power can be attributed to the improvement of material quality and light extraction.

In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-mean-square value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (1012) reflections in the double crystal X-ray rocking curve were ~330 and 450 respectively. The total threading dislocation density, revealed by transmission electron microscopy, was

InGaN/GaN light-emitting diodes (LEDs) with graded-composition AlGaN/GaN superlattice (SL) electron blocking layer (EBL) were designed and grown by metal-organic chemical vapor deposition. The simulation results demonstrated that the LED with a graded-composition AlGaN/GaN SL EBL have superior hole injection efficiency and lower electron leakage over the LED with a conventional AlGaN EBL or normal AlGaN/GaN SL EBL. Therefore, the efficiency droop can be alleviated to be ~ 20% from maximum at an injection current of 15-120 mA, which is smaller than that for conventional AlGaN EBL (30%). The corresponding experimental results also confirm that the use of a graded-composition AlGaN/GaN SL EBL can markedly enhance the light output power by 60%.

Objective To investigate the effects of insulin-like growth factor-1 (IGF-1) and basic fibroblast growth factor (bFGF) on the proliferation of chondrocytes in a 3-dimensional (3D) culture environment of microfluidic chip. Method Rabbit articular chondrocytes embedded in microfluidic chip and 96-well plate were cultured with solitary and component concentrations of IGF-1 and bFGF for 2 weeks, and then the proliferation rates of chondrocytes were calculated and compared. Results The maximal proliferation effect of IGF-1 was found when the concentration reached 57.14ng/ml (up to 2.38-fold), and of bFGF at the concentration of 5.72ng/ml (up to 3.85-fold), while the maximal proliferation effect of combination of IGF-1+bFGF was found at the concentration of 85.71ng/ml IGF-1 plus 1.43ng/ml bFGF (up to 4.76-fold). There was no significant difference between the proliferation rate of chondrocytes cultured in microfluidic chip and 96-well plate. Conclusions A combination of IGF-1 plus bFGF in certain concentration may synergistically increase the proliferation of chondrocytes. Microfluidic chip could be used for efficient cartilage tissue engineering.

Systematic understanding of dynamic biological networks is grounded at the molecular level. Knowledge at this level will discover the functions of molecular components and their interactions with cells or among the molecules themselves. Single-molecule detection has proved to be an indispensable technique for characterizing molecular interactions in various physiological conditions. Among the single-molecule-detection methods, wide-field microscopy-based fluorescence imaging is unique in that dynamic single-molecule events can be vividly observed in a wide observation field. Such a technique has obvious advantages for direct tracking of the pathways and processes of molecular interactions and giving visual information about the molecular mechanisms of many biological events. We discuss experimental schemes and applications of wide-field fluorescence microscopy in characterizing biological molecular interactions and studying virus-cell or particle-cell interactions.

We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.

For 365-nm ultraviolet light-emitting diodes (UV LEDs), an electron blocking layer (EBL) is usually utilized to mitigate electron overflow. However, using EBL might obstruct holes from injecting into the active region. Moreover, the large polarization field in conventional EBL might also pull down the effective barrier height for electrons, and thus the electrons could easily overflow to the p-side region. To solve the above drawbacks, in this study, the Al content and p-doping concentration of the EBL in typical 365-nm UV LEDs are investigated systematically. Specifically, designs of AlGaN/GaN superlattice EBL and Al-content-graded EBL are explored in detail.

This letter examines a hybrid phosphor structure for white light-emitting diodes. The hybrid phosphor structure produces more efficient luminosity and more uniform angular correlated color temperature (CCT) than the conventional dispensing method. The experimental results show that the CCT deviation improved from 453 to 280 K between -70° and 70 °. This was likely caused by the large blue light divergent angle. The lumen output produced was higher than that produced by dispense and conformal phosphor structures. Therefore, the results show that the hybrid phosphor structure can be used in solid-state lighting.

The advantages of a (0001) face GaN/InGaN p-i-n solar cell with compositional grading configuration between i-InGaN/p-GaN layers are studied numerically. With the use of the grading layer, the conversion efficiency is markedly promoted due to the reduction of potential barrier height for holes and due to the decrease of polarization. Optimized conversion efficiency is obtained when the thickness of the grading layer increases to a critical value. This critical thickness is strongly influenced by the polarization charges and doping concentration of the grading layer. When the density of the polarization charges is high or the doping concentration is low, a thick grading layer is required to achieve high efficiency.

A compositional grading layer between the p-In0.5Ga0.5P emitter layer and p-In0.5Al0.5P window layer in the p+-n In0.5Ga0.5P solar cell is investigated numerically. With the insertion of the grading layer, the short-circuit current density and conversion efficiency are improved due to the enhancement of carrier-collection efficiency, which can be ascribed to the reduction of potential barrier height in the valance band and the existence of internal quasi-electric field in the conduction band. An optimized value of conversion efficiency can be obtained by appropriately adjusting the thickness of the grading layer.

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

This study demonstrated the high CRI and excellent uniformity colloidal quantum dot white-light-emitting diodes with the DBR structure at different correlated color temperature from 2500 K to 4500K.

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.

In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2 comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.

Crack-free GaN-based light-emitting diodes (LEDs) were grown on 150-mm-diameter Si substrates by using low-pressure metal-organic chemical vapor deposition. The relationship between the LED devices and the thickness of quantum barriers (QBs) was investigated. The crystal quality and surface cracking of GaN-on-Si were greatly improved by an AlxGa1−xN buffer layer composed of graded Al. The threading dislocation density of the GaN-on-Si LEDs was reduced to

This paper presents a "hybrid" structure for the coating of yellow YAG∶Ce3 þ phosphor on blue GaN-based light-emitting diodes (LEDs). The luminous efficiency of the hybrid phosphor structure improved by 5.9% and 11.7%, compared with the conventional remote and conformal phosphor structures, respectively, because of the increased intensity of the yellow component. The hybrid structure also has an advantage in the phosphor usage reduction for the LEDs. Furthermore, the electric intensity of the hybrid phosphor structure was calculated for various thicknesses by conducting TFCalc32 simulation, and the enhanced utilization of blue rays was verified. Finally, the experimental results were consistent with the simulation results performed using the Monte-Carlo method. © 2015 Society of Photo-Optical Instrumentation Engineers (SPIE) (DOI: 10.1117/1.JPE.5.057603)

We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 /spl Aring/. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 /spl Aring/. The roughness increased to one to two monolayers of Si in a 55-/spl Aring/ oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-/spl Aring/ oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.

Domoic acid, a main component of amnesic shellfish toxin (one of the four sorts of marine red tide bio-toxins) was determined by capillary electrophoresis with UV detection. The shellfish samples were prepared by solvent extraction, cleaned-up with a strong anion-exchange cartridge (SAX: Part No. 1210-2044, Lot No. 182639, Varian) and a cation-exchange cartridge (SCX: Part No. 1211-3039, Lot No. 171069, Varian). The quantitative analysis was performed with external standard under the optimum conditions of capillary electrophoretic analysis. The calibration curve of domoic acid showed good linearity in the range of 0.2 mg/L-50 mg/L with r = 0.9990, and the detection limit was 0.063 mg/L(S/N3). Spiked with standard at three levels (5.00 micrograms/g, 10.00 micrograms/g and 20 micrograms/g), the samples had the recoveries of 97.24%, 96.92% and 97.55%, and the RSDs of 2.74%, 2.59% and 1.95%, respectively. Five kinds of shellfish samples normally consumed in Dalian sea area were collected and quantified. The method has the advantages of being simple, convenient, sensitive and low cost. Therefore it can be used as one of the routine monitoring methods for amnesic shellfish toxin.

UV labeling detection has been commonly used to determine the association constants between lectins and saccharides, but the interaction is always between the labeled carbohydrates, rather than the truly underivatized carbohydrates, and lectins. In order to directly detect saccharides during the study on the interaction of glucose and its derivatives with lectins (e.g., concanavalin A), a capillary zone electrophoretic method with detection at a wavelength of 195 nm has been developed. The influences of various separation conditions including buffer concentration, pH and voltage were investigated. By using an uncoated silica capillary (50 microns i.d., 375 microns o.d., 48.5 cm of total length, and 44.0 cm to the detector) and 50 mmol/L Na2HPO(4)-50 mmol/L NaH2PO4 solution (near to the physiological pH of 7.4) as buffer, the underivatized sugars, including glucosamine, N-acetylglucosamine, glucose, and sodium gluconate, were sufficiently separated within 11 min at an applied voltage of 10 kV. On-column UV monitoring allowed the detection of these compounds at less than 4 mmol/L level, and quantification by the peak area method allowed reproducible determination of them at least at their respective concentration ranges. The method is characterized by its simplicity, rapidity, and reproducibility, and should be useful for the analysis of the interaction of glucose and its derivatives with lectins.

The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 107 cm−2 to 2.6 × 107 cm−2. Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.

The influence of the thermal effect of phosphor for conformal and remote structures in white light-emitting diodes was investigated using the junction and phosphor temperatures. Comparing the measured temperatures with IR thermometer, the remote structure has a higher phosphor temperature than the conformal structure. This result indicates that the phosphor in the conformal structure has demonstrated superior conduction because of the high thermal conductivity in surrounding. Furthermore, thermal distribution in the simulation results has shown to have favorable agreement with the experimental results. Consequently, the lifetime measurement is shown to verify the results of the simulation and experiment for both structural types.

This study demonstrates the hybrid structure with high lumen efficiency and uniform angular-dependent correlated color temperature (CCT) for warm white LED. Compared to the conventional structures, the hybrid structure combines the advantage of the two different fabrication methods including dispense and pulse spray method together, which can produce the high quality lighting source. The experimental results indicate that the hybrid structure yielded higher lumen efficiency than conventional phosphor structure because of the gradual refractive index difference from the coating layer to the dispense layer. Moreover, the CCT deviations of the hybrid phosphor structure could be reduced to 65 K in range of -70 to 70 degrees. This is attributed to the uniform color mixing of the blue, yellow and red band in the hybrid phosphor structure. In addition, the chromaticity coordinate shift compared to the hybrid structure with the dispense structure are almost the same at a current regulation from 20 mA to 500 mA. We believe that the technology of the hybrid structure with high lumen efficiency and uniform angular-dependent CCT is suitable for in the general lighting application.

For the purpose of light extraction and efficiency enhancement, the nitride-based ultraviolet vertical-injection light-emitting diodes (UV-VLEDs) with non-insulation current blocking layer (n-CBL) and optimized textured surface were fabricated. The optical and electrical characteristics were investigated in this n-CBL UV-VLED. Furthermore, the efficiency of optimized structure was improved by 5 ~ 6 times compared to our reference.